SAMSUNG ELECTRONICS INC b7E D MM 7964242 0017317 379 MBSNGK IRF830/831/832/833 N-CHANNEL IRFP430/431/432/433 POWER MOSFETS FEATURES TO-220 Lower Ros (on) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability IRF830/831/832/833 TO-3P PRODUCT SUMMARY | Part Number Vos Rosion) lp IRF830/IRFP430 500V 1.59 4.5A IRF831/IRFP431 450V 1.59 4.5A ' IRFP430/431/432/433 IRFES2/IRFPAS2 500V 2.00 4.0A \RFesainFPAss 450V 2.02 4.0A MAXIMUM RATINGS Characteristics Symbol | yarpago | IRFPAS1 | iRFPA92 | iRFPase | UN Drain-Source Voltage (1) Voss 500 450 500 450 Vde Drain-Gate Voltage (Ras=1.0M)(1) Vocr 500 450 500 450 Vdc | Gate-Source Voltage Ves +20 Vde Continuous Drain Current Tc=25C Ib 4.5 4.5 4.0 4.0 Adc Continuous Drain Current Tc= 100C lb 3.0 3.0 2.6 2.5 Adc Drain CurrentPulsed (3) Ibm 18 18 16 16 Adc Gate CurrentPulsed lem 1.5 Adc Single Pulsed Avalanche Energy (4) Eas 280 mJ Avalanche Current las 4.5 A Total Power Dissipation @ Tc=25C Pp 75 Watts Derate above 25C 0.6 wiec Oe ce rs Tt ~55 to 150 c Me tia" tun case tor 8 seconds TL 300 C Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse with limited by max. junction temperature (4) L=25 mH, Vag=50V, Re=250, Starting T= 25C AH SAMSUNG 210SAMSUNG ELECTRONICS INC B7E D MM 7964242 0017318 205 MESNGK IRF830/831/832/833 N-CHANNEL ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) symbol, Characteristic Min Typ | Max |Units Test Conditions | | Drain-Source Breakdown Voltage | [RF830/1RFP430 500 _ Vs | Ves=O0V BVoss | | [RF832/IRFP432 een 4 Ip=250pA | IRF831/ARFP431 ' IRF833/IRFP433 450; | Veasith) | Gate Threshold Voltage 2.0) 4.0 V_| Vos=Ves, Ip=250pA lass | Gate-Source Leakage Forward | | 100 } nA |! Ves=20V Iass_ | Gate-Source Leakage Reverse | |-100) nA | Vas=20V loss Zero Gate Voltage |} | 250 | uwA Vos=Max. Rating, Ves=O0V b ; . Drain Current | |1000] vA - Vpgs=Max. RatingX0.8, Ves=OV, Tc =125C On-State Drain-Source Current (2) IRF830/IRFP430 4.6]; - A > = loter) | Reet REP ASI Vos?9V, Ves=10V IRF832/IRFP432 '40! _ A IRF833/IRFP433 | Static Drain-Source On-State Resistance (2) | Rosion) | IRF830/IRFP430 | 10.95] 4.5 Q | Ves=10V, Ip=2.5A | IRF831/IRFP 431 | To + IRF832/IRFP432 | |1.4] 2.0 IRF833/IRFP433 a . te Gts Forward Transconductance (2) 2.6] 3.2 - U_ | Vos250V, Ip=2.5A Ciss Input Capacitance |780; pF Coss | Output Capacitance | 86 _ pF | Ves=OV, Vos=25V, f=1.0MHz Criss Reverse Transfer Capacitance / | 38 _ pF taon) | Turn-On Delay Time / | 41 17 ns + Vop=0.5BVopss, Ip=4.5A, Z9=120 t, Rise Time : | 15 | 23 | MS _| (MOSFET switching times are essentially tion | Turn-Off Delay Time | 35 53 ns_ | independent of operating temperature) t, | Fall Time >= | 15] 23 | ns Total Gate Charge : | 21 32 nc Qo (Gate-Source Plus Gate-Drain) Ves=10V, Ip=4.5A, Vps=0.8 Max. Rating Ags Gate-Source Charge !32]/48 | nc (Gate charge is essentially independent of pe Eee pe nee ~ operating temperature.) Qga | Gate-Drain (Miller) Charge /{11 17 no THERMAL RESISTANCE Symbol | _ Characteristic _ IRF830-3 | IRFP430-3 Unit Ric | Junction-to-Case MAX.. 1.67. | 1.67 KW ; | T : Rincs | Case-to-Sink TYP | 0.50 0.24 K/W Mounting surface flat, : i smooth, and greased poo 4 - Rthsa Junction-to-Ambient MAX | 80 40 K/W Free Air Operation Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature SAMSUNG 2SAMSUNG ELECTRONICS INC b7E D MM 7964142 0017319 141 BESMGK IRF830/831/832/833 N-CHANNEL IRFP430/431/432/433 POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min| Typ | Max Units Test Conditions | Continuous Source Current | (Body Diode) \ Is IRF830/IRFP430 -|- 4.5 A IRF831/IRFP431 IRF832/IRFP432 IRF833/IRFP433 , Modified MOSFET symboi & G | showing the integral Pulse Source Current(Body Diode)(3) reverse P-N junction rectifier Ism IRF830/IRFP430 --/| 18 A IRF831/IRFP431 IRF832/IRFP432 IRF833/IRFP433 Diode Forward Voltage (2) Vsp_ | IRF830/IRFP430 j-] 1.6 Vo} Tco=25C, Is=4.5A, Vas=OV IRF831/IRFP431 IRF832/IRFP432 ago _ _ IRF833/IRFP433 |- 1.5 Vv Tc=28C, Is=4.0A, Vag=OV tre Reverse Recovery Time |370| 760 | ns | Tj=25C, lr=4.5A, dle/dt=100A/uS Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse with limited by max. junction temperature 80us Pulse Test Fi g i fi a z z 5 ns wi 5 cs eg & 3 Zz = z < 5 5 s 3 8 ' 0 1 2 3 4 5 6 7 Vs, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vas, GATE-TO-SQURCE VOLTAGE (VOLTS} Typical Output Characteristics Typical Transfer Characteristics & SAMSUNG a2 ElectronicsSAMSUNG ELECTRONICS INC IRF830/831/832/833 IRFP430/431/432/433 Veg=5 5V Veg =10V Ip, DRAIN CURRENT (AMPERES) Q 2 4 6 8 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics oe THERMAL a a Zthuc(/Rihic, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE {PER UNIT) o 8 0.01 10-5 5 10 2 5 2 10 b7E D MM 7964142 00173c0 bd MSMGK 5 107 fo, DRAIN CURRENT (AMPERES) 2 5 N-CHANNEL POWER MOSFETS OPERATION IN THIS AREA IS LIMITED BY Rosiosy To=25C T,=150C MAX Rinac = 1.67 KW SINGLE PULSE DC 10 2 5 10 20 50 100 200 500 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Maximum Safe Operating Area P, El 1. Duty Factor D= te a. 2. Per Unit Base=Ring = 1.67 Deg. 3. Ta Te =Pom 2msc (0 10" 2 5 1 2 5 10 tl, SQUARE WAVE PULSE DURATION (SECONDS) . Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration Vos? loro Aosive: max Pulse Test gts, TRANSCONDUCTANCE (SIEMENS) o 1 2 3 4 ip, DRAIN CURRENT (AMPERES) Typical Transcounductance Vs. Drain Current Ing, REVERSE DRAIN CURRENT (AMPERES) 146 2 Qo o5 1 25 3 Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical SourceDrain Diode Forward Voitage SAMSUNG 213SAMSUNG ELECTRONICS INC IRF830/831/832/833 IRFP430/431/432/433 b7E D MM 7964142 0017321 ATT MMSNGK N-CHANNEL POWER MOSFETS ws 3g t K = So 1.16 > z = 3 Z & 1.05 56 aS we oF 55 0 gz oO E 2 = = 085 a g so > a 0.75 40 40 80 1 160 Ty, JUNCTION 7%MPERATURE (C) Breakdown Voitage Vs. Temperature 2000 1600 Coss=Cds+ ic =cds+Cad 2 wy 1200 z 4 Ee Oo e =< 800 & g 400 0 10 20 30 40 50 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Capacitance Vs. Drain to Source Voltage Rosin MEASURED WITH CURRENT PULSE OF | 2.0us DURATION INITIAL T,=25C (HEATING OF 2 Oys PULSE IS Rosion), DRAIN-TO-SOURCE ON RESISTANCE (OHMS) 5 10 15 20 25 to, DRAIN CURRENT (AMPERES) Typical On-Resistance Vs. Drain Current Rosjon), DRAIN-TO-SOURCE ON RESISTANCE {NORMALIZED} Ves, GATE-TO-SOURCE VOLTAGE (VOLTS) Ip, DRAIN CURRENT (AMPERES) ~40 a 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Normalized On-Resistance Vs. Temperature Vps=100V Vog= 250 Vps=400 8 16 24 Qg, TOTAL GATE CHARGE (nC) Typical Gate Charge Vs. Gate-To-Source Voltage 25 50 4 Tc, CASE TEMPERATURE (C) Maximum Drain Current Vs. Case Temperature & SAMSUNG 214SAMSUNG ELECTRONICS INC b7E D MM 79b414e 0017322 73b MSMGK IRF830/831/832/833 N-CHANNEL IRFP430/431/432/433 POWER MOSFETS 70 60 50 30 20 Pp, POWER DISSIPATION (WATTS) 10 0 20 40 60 80 100 120 140 160 T., CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve & SAMSUNG ats