CO M PL IA NT TISP1072F3,TISP1082F3 *R oH S DUAL FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP1xxxF3 Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `1072F3 `1082F3 D Package (Top View) T 1 8 G VDRM V(BO) NC 2 7 G V - 58 - 66 V - 72 - 82 NC 3 6 G R 4 5 G NC - No internal connection Planar Passivated Junctions Low Off-State Current <10 A Rated for International Surge Wave Shapes Waveshape Standard 2/10 s 8/20 s 10/160 s GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K.20/21 FCC Part 68 FCC Part 68 GR-1089-CORE 10/700 s 10/560 s 10/1000 s Device Symbol ITSP 50 45 35 SD1XAA G .......................................UL Recognized Component Description These dual forward-conducting unidirectional over-voltage protectors are designed for the overvoltage protection of ICs used for the SLIC (Subscriber Line Interface Circuit) function. The IC line driver section is typically powered with 0 V and a negative supply. The TISP1xxxF3 limits voltages that exceed these supply rails and is offered in two voltage variants to match typical negative supply voltage values. High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially limited by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These protectors are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. How To Order Device Package R T A 80 70 60 Carrier Order As Tape And Reeled TISP1xxxF3DR-S TISP1xxxF3 D, Small-outline Insert xxx value corresponding to protection voltages of 072 and 082 *RoHS Directive 2002/95/EC Jan 27 2003 including Annex SEPTEMBER 1993 - REVISED SEPTEMBER 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Terminals T, R and G correspond to the alternative line designators of A, B and C TISP1xxxF3 Overvoltage Protector Series Description (continued) High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially limited by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current helps prevent d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These protectors are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted) Rating Repetitive peak off-state voltage, 0 C < TA < 70 C `1072F3 `1082F3 Symbol Value Unit VDRM -58 -66 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) 1/2 (Gas tube differential transient, 1/2 voltage wave shape) 120 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 80 1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 resistor) 50 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 70 10/160 (FCC Part 68, 10/160 voltage wave shape) 60 IPPSM 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) A 55 0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 38 5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 50 5/320 (FCC Part 68, 9/720 voltage wave shape, single) 50 10/560 (FCC Part 68, 10/560 voltage wave shape) 45 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 35 Non-repetitive peak on-state current, 0 C < TA < 70 C (see Notes 1 and 3) 50 Hz, 1 s ITSM 4.3 A Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A diT/dt 250 A/s TJ -65 to +150 C Tstg -65 to +150 C Junction temperature Storage temperature range NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section. 2. Initially the TISP(R) must be in thermal equilibrium with 0 C < TJ <70 C. The surge may be repeated after the TISP(R) returns to its initial conditions. 3. Above 70 C, derate linearly to zero at 150 C lead temperature. Electrical Characteristics for R and T Terminal Pair, TA = 25 C (Unless Otherwise Noted) IDRM ID Coff NOTE Parameter Repetitive peak offstate current Off-state current Test Conditions Off-state capacitance f = 100 kHz, Vd = 100 mV VD = 0 (see Note 4) Min Typ Max Unit VD = VDRM, 0 C < TA < 70 C 10 A VD = 50 V 10 A 0.5 pF 0.08 4: Further details on capacitance are given in the Applications Information section. SEPTEMBER 1993 - REVISED SEPTEMBER 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP1xxxF3 Overvoltage Protector Series Electrical Characteristics for T and G or R and G Terminals, TA = 25 C (Unless Otherwise Noted) IDRM Parameter Repetitive peak offstate current VD = VDRM, 0 C < TA < 70 C V(BO) Breakover voltage dv/dt = -250 V/ms, RSOURCE = 300 V(BO) Impulse breakover voltage I(BO) Breakover current VFRM Peak forward recovery voltage VT VF IH dv/dt ID Coff On-state voltage On-state voltage Holding current Critical rate of rise of off-state voltage Off-state current Off-state capacitance Test Conditions dv/dt -1000 V/s, Linear voltage ramp, Maximum ramp value = -500 V RSOURCE = 50 dv/dt = -250 V/ms, RSOURCE = 300 dv/dt +1000 V/s, Linear voltage ramp, Maximum ramp value = +500 V RSOURCE = 50 IT = -5 A,t W = 100 s IT = +5 A,t W = 100 s IT = -5 A,d i/dt = +30 mA/ms `1072F3 `1082F3 VD = -50 V f = 1 MHz, Vd = 0.1 Vr .m.s.,V D = 0 Vd = 0.1 Vr .m.s.,V D = -5 V Max Unit -10 A -72 -82 V -78 -92 -0.1 `1072F3 `1082F3 V -0.6 3.3 3.3 A V -3 +3 Linear voltage ramp, Maximum ramp value < 0.85VDRM f = 1 MHz, Typ `1072F3 `1082F3 f = 1 MHz, Vd = 0.1 Vr .m.s.,V D = -50 V (see Note 4) NOTE Min -0.15 V V A -5 kV/s `1072F3 `1082F3 `1072F3 `1082F3 `1072F3 `1082F3 -10 240 240 104 104 48 48 A 150 130 65 55 30 25 Typ Max Unit 160 C/W pF 5: Further details on capacitance are given in the Applications Information section. Thermal Characteristics Parameter R JA Junction to free air thermal resistance Test Conditions Ptot = 0.8 W, TA = 25 C 5 cm2, FR4 PCB SEPTEMBER 1993 - REVISED SEPTEMBER 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Min TISP1xxxF3 Overvoltage Protector Series Parameter Measurement Information +i Quadrant I ITSP Forward Conduction Characteristic ITSM IF VF V(BR)M VDRM -v VD +v ID I(BR) IDRM V(BR) IH I(BO) VT V(BO) IT ITSM Quadrant III ITSP Switching Characteristic -i PMXXAC Figure 1. Voltage-current Characteristic for Terminals R and G or T and G +i Quadrant I ITSP Switching Characteristic ITSM IT V(BO) VT I(BO) IH V(BR)M VDRM -v I(BR) V(BR) I(BR) IDRM VD ID ID VD IDRM +v VDRM V(BR)M V(BR) IH I(BO) V(BO) VT IT ITSM Quadrant III Switching Characteristic ITSP -i PMXXAA Figure 2. Voltage-current Characteristic for Terminals R and T SEPTEMBER 1993 - REVISED SEPTEMBER 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP1xxxF3 Overvoltage Protector Series Typical Characteristics - R and G or T and G Terminals OFF-STATE CURRENT vs JUNCTION TEMPERATURE BREAKDOWN VOLTAGES vs JUNCTION TEMPERATURE TC1LAF 100 VD = -50 V Negative Breakdown Voltages - V I(BR) = 1 mA 10 1 0.1 0.01 TC1LAL '1082F3 80.0 V(BO) V(BR)M 70.0 V(BR) '1072F3 V(BO) V(BR) 60.0 V(BR)M 0.001 -25 0 25 50 75 100 125 150 -25 TJ - Junction Temperature - C 0 25 75 100 125 150 TJ - Junction Temperature - C Figure 3. Figure 4. OFF-STATE CURRENT vs ON-STATE VOLTAGE 100 50 FORWARD CURRENT vs FORWARD VOLTAGE TC1LAC TC1LAE 100 IF - Forward Current - A 25 C 10 150 C 40 C 10 25 C -40 C 150 C 1 1 1 2 3 4 5 6 7 8 9 10 VT - On-State Voltage - V Figure 5. SEPTEMBER 1993 - REVISED SEPTEMBER 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 1 2 3 4 5 VF - Forward Voltage - V Figure 6. 6 7 8 9 10 TISP1xxxF3 Overvoltage Protector Series 1.0 0.9 0.8 0.7 0.6 HOLDING CURRENT & BREAKOVER CURRENT vs JUNCTION TEMPERATURE TC1LAD 2.0 NORMALIZED BREAKOVER VOLTAGE vs RATE OF RISE OF PRINCIPLE CURRENT 0.5 I(BO) 0.4 0.3 IH 0.2 1.8 1.7 1.6 1.5 1.4 1.3 1.2 0.1 0.09 0.08 0.07 1.1 -25 0 25 50 75 100 125 150 1.0 0.001 TJ - Junction Temperature - C 10.0 0.01 0.1 1 10 100 di/dt - Rate of Rise of Principle Current - A/s Figure 7. Figure 8. PEAK FORWARD RECOVERY VOLTAGE vs RATE OF RISE OF PRINCIPLE CURRENT TC1LAH 200 OFF-STATE CAPACITANCE vs R OR T TERMINAL VOLTAGE (NEGATIVE) TC1LAJ Third Terminal = 0 to -50 V 9.0 8.0 Off-State Capacitance - pF VFRM - Peak Forward Recovery Voltage - V TC1LAG 1.9 Normalized Breakover Voltage IH, I(BO) - Holding Current, Breakover Current - A Typical Characteristics - R and G or T and G Terminals 7.0 6.0 5.0 4.0 3.0 100 '1072F3 '1082F3 2.0 1.0 0.0 0.001 0.01 0.1 1 10 100 di/dt - Rate of Rise of Principle Current - A/s Figure 9. 10 0*1 1 10 50 R or T Terminal Voltage (Negative) - V Figure 10. SEPTEMBER 1993 - REVISED SEPTEMBER 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP1xxxF3 Overvoltage Protector Series Typical Characteristics - R and G or T and G Terminals OFF-STATE CAPACITANCE vs R OR T TERMINAL VOLTAGE (POSITIVE) 200 OFF-STATE CAPACITANCE vs JUNCTION TEMPERATURE TC1LAK 500 Third Terminal = 0 to -50 V TC1LAB Third Terminal = 0 to -50 V Off-State Capacitance - pF Off-State Capacitance - pF Terminal Bias = 0 '1072F3 150 '1082F3 '1072F3 100 '1082F3 '1072F3 Terminal Bias = -50 V '1082F3 100 0.01 0.1 10 0.3 -25 R or T Terminal Voltage (Positive) - V 0 25 Figure 11. Figure 12. SURGE CURRENT vs DECAY TIME 1000 Maximum Surge Current - A 50 TC1LAA 100 10 2 75 100 TJ - Junction Temperature - C 10 100 Decay Time - s Figure 13. SEPTEMBER 1993 - REVISED SEPTEMBER 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 1000 125 150 TISP1xxxF3 Overvoltage Protector Series Typical Characteristics - R and T Terminals OFF-STATE CURRENT vs JUNCTION TEMPERATURE TC1LAN 100 BREAKDOWN VOLTAGES vs JUNCTION TEMPERATURE 90.0 VD = 50 V TC1LAM I(BR) = 1 mA V(BO) Breakdown Voltages - V ID - Off-State Current - A 10 1 0.1 80.0 '1082F3 V(BR)M V(BR) V(BO) 70.0 '1072F3 0.01 V(BR) V(BR)M 0.001 60.0 -25 0 25 50 75 100 125 150 -25 TJ - Junction Temperature - C 0 50 75 100 125 150 Figure 15. HOLDING CURRENT & BREAKOVER CURRENT vs JUNCTION TEMPERATURE TC1LAO NORMALIZED BREAKOVER VOLTAGE vs RATE OF RISE OF PRINCIPLE CURRENT 2.0 TC1LAI 1.9 0.5 Normalized Breakover Voltage IH, I(BO) - Holding Current, Breakover Current - A Figure 14. 1.0 0.9 0.8 0.7 0.6 25 TJ - Junction Temperature - C I(BO) 0.4 0.3 IH 0.2 1.8 1.7 1.6 1.5 1.4 1.3 1.2 0.1 0.09 0.08 0.07 1.1 -25 0 25 50 75 100 TJ - Junction Temperature - C Figure 16. 125 150 1.0 0.001 0.01 0.1 1 10 100 di/dt - Rate of Rise of Principle Current - A/s Figure 17. SEPTEMBER 1993 - REVISED SEPTEMBER 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP1xxxF3 Overvoltage Protector Series Thermal Information MAXIMUM NON-RECURRING 50 Hz CURRENT vs CURRENT DURATION THERMAL RESPONSE TI1MAAa VGEN = 250 Vrms ZJA - Transient Thermal Impedance - C/W ITRMS - Maximum Non-Recurrent 50 Hz Current - A TI1LAAa RGEN = 10 to 150 10 1 0*1 1 10 100 1000 t - Current Duration - s Figure 18. SEPTEMBER 1993 - REVISED SEPTEMBER 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 100 10 1 0*0001 0*001 0*01 0*1 1 10 t - Power Pulse Duration - s Figure 19. 100 1000 TISP1xxxF3 Overvoltage Protector Series APPLICATIONS INFORMATION Electrical Characteristics The electrical characteristics of a TISP device are strongly dependent on junction temperature, TJ. Hence, a characteristic value will depend on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which generally minimize the temperature rise caused by testing. Application values may be calculated from the parameters' temperature coefficient, the power dissipated and the thermal response curve, Z (see M. J. Maytum, "Transient Suppressor Dynamic Parameters." TI Technical Journal, vol. 6, No. 4, pp.63-70, July-August 1989). Lightning Surge Wave Shape Notation Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an exponential decay. Wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50% of the maximum amplitude. The notation used for the wave shape is amplitude, rise time/decay time. A 50 A, 5/310 s wave shape would have a peak current value of 50 A, a rise time of 5 s and a decay time of 310 s. The TISP surge current graph comprehends the wave shapes of commonly used surges. Generators There are three categories of surge generator types, single wave shape, combination wave shape and circuit defined. Single wave shape generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g. 10/1000 s open circuit voltage and short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current (e.g. 1.2/50 s open circuit voltage and 8/20 s short circuit current). Circuit specified generators usually equate to a combination generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 s open circuit voltage generator typically produces a 5/310 s short circuit current). If the combination or circuit defined generators operate into a finite resistance, the wave shape produced is intermediate between the open circuit and short circuit values. Current Rating When the TISP device switches into the on-state it has a very low impedance. As a result, although the surge wave shape may be defined in terms of open circuit voltage, it is the current wave shape that must be used to assess the required TISP surge capability. As an example, the ITU-T K.21 1.5 kV, 10/700 s open circuit voltage surge is changed to a 38 A, 5/310 s current waveshape when driving into a short circuit. Thus, the TISP surge current capability, when directly connected to the generator, will be found for the ITUT K.21 waveform at 310 s on the surge graph and not 700 s. Some common short circuit equivalents are tabulated below: Standard Open Circuit Voltage Short Circuit Current ITU-T K.21 1.5 kV, 10/700 s 37.5 A, 5/310 s ITU-T K.20 1 kV, 10/700 s 25 A, 5/310 s IEC 61000-4-5, combination wave generator 1.0 kV, 1.2/50 s 500 A, 8/20 s Telcordia GR-1089-CORE 1.0 kV, 10/1000 s 100 A, 10/1000 s Telcordia GR-1089-CORE 2.5 kV, 2/10 s 500 A, 2/10 s FCC Part 68, Type A 1.5 kV, <10/>160 s 200 A,<10/>160 s FCC Part 68, Type A 800 V, <10/>560 s 100 A,<10/>160 s FCC Part 68, Type B 1.5 kV, 9/720 s 37.5 A, 5/320 s Any series resistance in the protected equipment will reduce the peak circuit current to less than the generators' short circuit value. A 1 kV open circuit voltage, 100 A short circuit current generator has an effective output impedance of 10 (1000/100). If the equipment has a series resistance of 25 then the surge current requirement of the TISP device becomes 29 A (1000/35) and not 100 A. SEPTEMBER 1993 - REVISED SEPTEMBER 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP1xxxF3 Overvoltage Protector Series APPLICATIONS INFORMATION Protection Voltage The protection voltage, (V(BO)), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the rate of current rise, di/dt, when the TISP device is clamping the voltage in its breakdown region. The V(BO) value under surge conditions can be estimated by multiplying the 50 Hz rate V(BO) (250 V/ms) value by the normalized increase at the surge's di/dt (Figure 8.). An estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance. As an example, the ITU-T K.21 1.5 kV, 10/700 s surge has an average dv/dt of 150 V/s, but, as the rise is exponential, the initial dv/dt is higher, being in the region of 450 V/s. The instantaneous generator output resistance is 25 . If the equipment has an additional series resistance of 20 , the total series resistance becomes 45 . The maximum di/dt then can be estimated as 450/45 = 10 A/s. In practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP device breakdown region. Capacitance Off-state Capacitance The off-state capacitance of a TISP device is sensitive to junction temperature, TJ, and the bias voltage, comprising of the d.c. voltage, VD, and the a.c. voltage, Vd. All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical 25 C variation of capacitance value with a.c. bias is shown in Figure 21. When VD>> Vd, the capacitance value is independent on the value of Vd. The capacitance is essentially constant over the range of normal telecommunication frequencies. NORMALIZED CAPACITANCE vs RMS AC TEST VOLTAGE 1.05 AIXXAA Normalized Capacitance 1.00 0.95 0.90 0.85 0.80 Normalized to Vd = 100 mV 0.75 DC Bias, V D = 0 0.70 1 10 100 Vd - RMS AC Test Voltage - mV Figure 20. SEPTEMBER 1993 - REVISED SEPTEMBER 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 1000 TISP1xxxF3 Overvoltage Protector Series APPLICATIONS INFORMATION Longitudinal Balance Figure 21 shows a three terminal TISP device with its equivalent "delta" capacitance. Each capacitance, CTG, CRG and CTR, is the true terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T, then CTG >CRG. Capacitance CTG is equivalent to a capacitance of CRG in parallel with the capacitive difference of (CTG -CRG). The line capacitive unbalance is due to (CTG -CRG) and the capacitance shunting the line is CTR +CRG/2. All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is included. T T (CTG-CRG) CTG CRG Equipment G Equipment G CTR CTR CRG CRG R AIXXAB R CTG > CRG Equivalent Unbalance Figure 21. "TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries. SEPTEMBER 1993 - REVISED SEPTEMBER 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 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