AP2325GEN-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Small Package Outline Surface Mount Device BVDSS -20V RDS(ON) 90m ID - 3A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness. G The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units - 20 V +12 V 3 -3 A 3 -2.4 A Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V 1 IDM Pulsed Drain Current -12 A PD@TA=25 Total Power Dissipation 1.25 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Value Unit Maximum Thermal Resistance, Junction-ambient 3 100 /W Data and specifications subject to change without notice 1 201112071 AP2325GEN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -20 - - V VGS=-4.5V, ID=-3A - 70 90 m VGS=-2.5V, ID=-2A - 95 130 m -0.3 -0.7 -1 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-5V, ID=-3A - 8 - S IDSS Drain-Source Leakage Current VDS=-16V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +30 uA Qg Total Gate Charge ID=-3A - 6 9.6 nC Qgs Gate-Source Charge VDS=-10V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 1.7 - nC td(on) Turn-on Delay Time VDS=-10V - 7 - ns tr Rise Time ID=-1A - 16 - ns td(off) Turn-off Delay Time RG=3.3 - 21 - ns tf Fall Time VGS=-5V - 5 - ns Ciss Input Capacitance VGS=0V - 520 830 pF Coss Output Capacitance VDS=-10V - 70 Crss Reverse Transfer Capacitance f=1.0MHz - 55 Min. Typ. pF - pF Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-1.2A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-3A, VGS=0V, - 15 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 7 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2325GEN-HF 12 12 -5.0V -4.5V -3.5V -2.5V -ID , Drain Current (A) 10 T A = 150 o C 8 V G = -2.0V 6 4 2 8 65m 6 V G = -2.0V 4 2 0 0 0 1 2 3 4 5 0 1 2 3 4 5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2 150 I D = -2A I D = -3A V GS = -4.5V T A =25 o C 1.6 Normalized RDS(ON) 130 RDS(ON) (m ) -5.0V -4.5V -3.5V -2.5V 10 -ID , Drain Current (A) T A =25 o C 110 90 1.2 0.8 0.4 70 0 50 1 2 3 4 5 -50 6 -V GS , Gate-to-Source Voltage (V) 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 4 2 I D = -250uA Normalized -VGS(th) (V) 1.6 3 -IS(A) T j =150 o C T j =25 o C 2 1.2 0.8 1 0.4 2.01E+08 0 0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 T j , Junction Temperature ( 100 o 150 C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2325GEN-HF f=1.0MHz 8 800 600 6 65m C (pF) -VGS , Gate to Source Voltage (V) I D = -3A V DS = -10V 4 400 2 200 0 0 0 2 4 6 8 C oss C rss 1 10 C iss 5 9 13 17 21 25 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 100us 10 -ID (A) Normalized Thermal Response (Rthja) DUTY=0.5 Operation in this area limited by RDS(ON) 1ms 10ms 1 100ms 0.1 1s DC o T A =25 C Single Pulse 0.01 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 270/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 4 -ID , Drain Current (A) VG 3 QG -4.5V QGS 2 QGD 1 Charge Q 0 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) Fig 11. Maximum Continuous Drain Current v.s. Ambient Temperature Fig 12. Gate Charge Waveform 4