N-CHANNEL FEATURES D-PACK e Lower Ros (on) Improved inductive ruggedness * Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area e Improved high temperature reliability IRFR220/222 \ PRODUCT SUMMARY Part Number Vos Rosjon) Ib IRFR220 200V | 0.800 | 4.6A IRFR222 200V 4.22 3.8A MAXIMUM RATINGS Characteristic Symbol IRFR220 | IRFR222 Unit Drain-Source Voltage (1) Voss 200 Vde Drain-Gate Voltage (Res=1.0M2)(1} Vocr 200 Vde Gate-Source Voltage Ves +20 Vdc Continuous Drain Current Tc=25C Ip 4.6 3.8 Adc Continuous Drain Current Tc= 100C Ip 2.9 2.4 Adc Drain CurrentPulsed (3) lom 18 15 Adc Gate CurrentPulsed loo #1.5 Adc Single Pulsed Avalanche Energy (4) Eas 50 mJ Avalanche Current fas 4.6 A Total Power Dissipation @ Tc=25C Pp 42 Watts Derate above 25C 0.33 wiec Operating and Storage _ o Junction Temperature Range Ty, Tstg 55 to 180 c Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5 seconds Th 300 Notes: (1) Tj=25C to 150C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse with limited by max. junction temperature (4) L=4.5mH, Vaa=50V, Rg=25N, Starting T=25C 2 SARASUNG 257 _ ElectronicsIRFR220/222 N-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS (Te =25C unless otherwise specified) Symbol Characteristic Min) Typ | Max Units Test Conditions BVoss | Drain-Source Breakdown Voltage |200; | Vas=0V Ip=250uA Vesith) | Gate Threshold Voltage 2.0) 4.0 Vo} Vos=Ves, lp=250pA lass | Gate-Source Leakage Forward | | 100 |} nA | Veg=20V less Gate-Source Leakage Reverse | |-100] nA | Ves=-20V | tongs | ZeFo Gate Voltage | _|_259 | #A | Vos=Max. Rating Vas=OV _ Drain Current | |1000] pA | Vps=Max. RatingX0.8, Ves=OV. Tc=125C On-State Drain-Source Current (2) 46 A IRFR220 , Ip(on) - Vos>lpton) Rostonymax Ves= 10V IRFR222 3.8) _ A Static Drain-Source On-State : Rosion) | Resistance (2) -|/- ; 08 Q | Ves=10V, lo=2.4A IRFR220 IRFR222 -i- 1.2 2 Ofs Forward Transconductance (2) 1.7 2.6 _ U_.. Vps250V, Ip=2.4A Ciss | Input Capacitance 400; pF Coss Output Capacitance | 82 _ pF | Ves=OV, Vos=25V, f=1,.0MHz Ciss Reverse Transfer Capacitance | 32 pF taton) | Turn-On Delay Time | 88 13 ns oe Vop=0.5BVoss, lp=5.1A, Zo= 180 t Rise Time . |e7 | 4) NS_| (MOSFET switching times are essentially tao) | Turn-Off Delay Time | 21 32 ns | independent of operating temperature) tr Fall Time | 14 21 ns Total Gate Charge /| 12 1 Qa (Gate-Source Plus Gate-Drain) 8 nc Ves=10V, Ilp=5.1A, Vpg=0.8 Max. Rating Qgs_| Gate-Source Charge 123/ 34] nc (Gate charge is essentially independent of operating temperature.) Qoa Gate-Drain (Miller) Charge |45) 68 nc THERMAL RESISTANCE | Symbol Characteristic IRFR220/222 Unit Rthuc Junction-to-Case MAX 3.0 K/W Rincs | Case-to-Sink TYP 1.7 kw | Mounting surface flat, smooth, and greased Rihua Junction-to-Ambient MAX 110 K/W Free Air Operation Notes: (1) Tj=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature & SAMSUNG Electronics 258N-CHANNEL IRFR220/222 POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min | Typ | Max |Units Test Conditions Is Continuous Source Current _||46 A Modified MOSFET 0 (Body Diode) . . showing the integral G Ism | Pulse Source Current(Body Diode)(3}/ | 18 A reverse P-N junction rectifier s Vsp | Diode Forward Voltage (2)/ | | 1.8 Vv To=25C, Ig=4.6A, Veg=OV tre Reverse Recovery Time] 170; 400 | ns T=150C, tr=5.1A, dle/dt=100A/uS Notes: (1) Tj=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse with limited by max. junction temperature 80ps Pulse Test 80ys Pulse Test aa Vos teen Rosioni wae 5c C Ip, DRAIN CURRENT (AMPERES) ip, ORAIN CURRENT (AMPERES) 0 20 1 Q 2 4 6 8 10 12 14 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Ves, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics Typical Transfer Characteristics 10 102 80ps Pulse Vos=10V Vos=8V 5 LIMITED BY 8 a ~ 2 & Fa ia wd # = 10 z < = 6 5 z @ Ww & 5 gs &o 2 o 4 z z < z a 5 5 ao 2 5 2 0.1 0 2 4 6 8 10 70 2 5 10 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics Maximum Safe Operating Area & SAMSUNG | 209 ElectronicsN-CHANNEL IRFR220/222 POWER MOSFETS EI THERMAL IMPEDANCE) Duty F. t 1 c te ae ty Factor. D: 7 2 Per Unit Base=Ryic= 3.12 Deg. CW 3 Tae T2= Pom Zee (0 ZinucttRynic, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) 5 2 5 2 5 1 2 5 1 2 5 1 2 5 10 tl. SQUARE WAVE PULSE DURATION (SECONDS) | Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration T,=25C Ty=10C nN Viss*oree; % Raster: mae gts, TRANSCONDUCTANCE (SIEMENS) a lor, REVERSE DRAIN CURRENT (AMPERES) a Pulse Test Tj=150C 2 Ty=25C 1.0 0 2 4 6 8 10 0 1 2 3 4 5 6 ; Ib, RAIN CURRENT (AMPERES) Vsp, SOURCE-TO-ORAIN VOLTAGE (VOLTS) Typical Transconductance Vs. Drain Current Typical SourceDrain Diode Forward Voltage 1.25 (NORMALIZED) o a DRAIN-TO-SOURCE ON RESISTANCE BVpss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE {NORMALIZED} 0.85 3 a o a 0.75 -40 a 40 80 120 160 40 0 40 80 120 160 Tj, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Normalized On-Resistance Vs. Temperature SAMSUNG 260IRFR220/222 1000 1 MHz Crss=Coad | 800 Coss= Cas + GasCad Cgs+Cgd =Cds+Cgd & w 600 So z < rE 2 a & 400 oO oC 200 0 10 20 30 50 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Capacitance Vs. Drain to Source Voltage Rosion: WITH PULSE OF | 2 Ous DURATION. INITIAL T,=25C | (HEATING EFFECT OF 2 Qus 1S MINIMAL} Rosion), DRAIN-TO-SOURCE ON RESISTANCE (OHMS) 0 5 10 16 20 25 Ip, ORAIN CURRENT (AMPERES) Typical On-Resistance Vs. Drain Current Pp, POWER DISSIPATION (WATTS) a 20 40 60 80 100 120 140 160 To, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve Vas. GATE-TO-SOURCE VOLTAGE (VOLTS) ip, DRAIN CURRENT (AMPERES) N-CHANNEL POWER MOSFETS Vey=40V Vos= 1004 Vos=t oO 12 16 20 4 8 Qg, TOTAL GATE CHARGE (nC) Typical Gate Charge Vs. Gate-To-Source Voltage o 25 50 75 100 125 150 Ta, AMBIENT TEMPERATURE (C) Maximum Drain Current Vs. Case Temperature SAMSUNG 261