AFT18P350--4S2LR6
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 63 watt symmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications covering the frequency range of
1805 to 1880 MHz.
Typical Doherty Single--Carrier W--CDMA Performance: VDD =28Volts,
IDQA = 1000 mA, VGSB =1.2Vdc,P
out = 63 Watts Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz 16.1 44.5 7.7 --29.8
1840 MHz 16.1 44.3 7.7 --31.6
1880 MHz 15.8 44.1 7.6 --33.0
Features
Production Tested in a Symmetrical Doherty Configuration
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
1. Device cannot operate with the VDD current supplied through pin 3 and pin 6.
Document Number: AFT18P350--4S2L
Rev. 0, 4/2013
Freescale Semiconductor
Technical Data
1805--1880 MHz, 63 W AVG., 28 V
AFT18P350--4S2LR6
NI--1230--4LS2L
(Top View)
RFoutA/VDSA
Figure 1. Pin Connections
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
VBWA(1)
VBWB(1)
6
3
15
24
Carrier
Peaking
Freescale Semiconductor, Inc., 2013.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT18P350--4S2LR6
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature Range TC--40 to +150 C
Operating Junction Temperature Range (1,2) TJ--40 to +225 C
CW Operation @ TC=25C
Derate above 25C
CW 374
3.2
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 75C, 63 W W--CDMA, 28 Vdc, IDQA = 1000 mA, VGSB = 1.2 Vdc, 1805 MHz
RJC 0.39 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics
Gate Threshold Voltage (4)
(VDS =10Vdc,I
D= 240 Adc)
VGS(th) 1.5 1.9 2.5 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
DA = 1000 mAdc, Measured in Functional Test)
VGS(Q) 2.3 2.7 3.3 Vdc
Drain--Source On--Voltage (4)
(VGS =10Vdc,I
D=2.75Adc)
VDS(on) 0.1 0.2 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
AFT18P350--4S2LR6
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4 . Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1,2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 1000 mA, VGSB =1.2Vdc,
Pout = 63 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 15.0 16.1 18.0 dB
Drain Efficiency D41.0 44.5 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 7.2 7.7 —dB
Adjacent Channel Power Ratio ACPR —--29.8 --27.0 dBc
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQA = 1000 mA, f = 1840 MHz
VSWR 10:1 at 32 Vdc, 414 W CW (3) Output Power
(3 dB Input Overdrive from 316 W CW Rated Power)
No Device Degradation
Typical Performance (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 1000 mA, VGSB =1.2Vdc,
1805--1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —316 — W
Pout @ 3 dB Compression Point (4) P3dB —394 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805--1880 MHz bandwidth)
—31 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —90 —MHz
Gain Flatness in 75 MHz Bandwidth @ Pout =63WAvg. GF—0.4 —dB
Gain Variation over Temperature
(--30Cto+85C)
G — 0.01 —dB/C
Output Power Variation over Temperature
(--30Cto+85C) (3)
P1dB —0.005 —dB/C
1. Part internally matched both on input and output.
2. Measurements made with device in a symmetrical Doherty configuration.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
4
RF Device Data
Freescale Semiconductor, Inc.
AFT18P350--4S2LR6
Figure 2. AFT18P350--4S2LR6 Test Circuit Component Layout
+
--
+
--
*C5, C6, C21 and C22 are mounted vertically.
AFT18P350--4S2L
Rev. 4
CUT OUT AREA
R4
VGGA
C2
C1 R2
C9
C7C7
C5*
C6*
C10
C8
Z1
R1
C4
C3 R3
VGGB R5
C18
C12
C14
C13
C11
C23
C17
C15
C20
C19 C21*
C22*
C16
VDDA
VDDB
C
P
Table 5. AFT18P350--4S2LR6 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C3 10 F, 50 V Chip Capacitors GRM31CR61H106KA12L Murata
C2, C4, C5, C6, C13, C14,
C21, C22
12 pF Chip Capacitors ATC100B120JT500XT ATC
C7, C8, C9, C10 0.3 pF Chip Capacitors ATC100B0R3BT500XT ATC
C11, C12, C15, C17 10 F, 100 V Chip Capacitors C5750X7S2A106M TDK
C16, C18 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
C19 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC
C20 0.6 pF Chip Capacitor ATC100B0R6BT500XT ATC
C23 0.4 pF Chip Capacitor ATC100B0R4BT500XT ATC
R1 50 , 10 W Chip Resistor CW12010T0050GBK ATC
R2, R3 2.7 , 1/4 W Chip Resistors CRCW12062R70FNEA Vishay
R4, R5 1.8 k, 1/4 W Chip Resistors CRCW12061K80FKEA Vishay
Z1 1700-2000 MHz Band 90, 3 dB Hybrid Coupler X3C19P1-03S Anaren
PCB 0.020,r= 3.50 RO4350B Rogers
AFT18P350--4S2LR6
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
1760
ACPR
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 63 Watts Avg.
15
17
16.8
16.6
-- 3 6
47
46
45
44
-- 2 6
-- 2 8
-- 3 0
-- 3 2
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
16.4
16.2
16
15.8
15.6
15.4
15.2
1780 1800 1820 1840 1860 1880 1900 1920
43
-- 3 4
ACPR (dBc)
PARC
VDD =28Vdc,P
out =63W(Avg.),I
DQA = 1000 mA
VGSB = 1.2 Vdc, Single--Carrier W--CDMA
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 200
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM5--U
IM5--L
IM7--L IM7--U
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
40
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
25 55 70 100
0
60
50
40
30
20
10
DDRAIN EFFICIENCY (%)
85
DACPR
PARC
ACPR (dBc)
-- 3 8
-- 2 6
-- 2 8
-- 3 0
-- 3 4
-- 3 2
-- 3 6
16.3
Gps, POWER GAIN (dB)
16.2
16.1
16
15.9
15.8
15.7
Gps
-- 1 d B = 3 8 W
PARC (dB)
-- 2 . 8
-- 2
-- 2 . 2
-- 2 . 4
-- 2 . 6
-- 3
-- 5
Gps
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
IM3--L
1
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
IM3--U
VDD =28Vdc,P
out = 84 W (PEP), IDQA = 1000 mA
VGSB = 1.2 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
-- 2 d B = 5 9 W
-- 3 d B = 8 4 W
VDD =28Vdc,I
DQA = 1000 mA
VGSB = 1.2 Vdc, f = 1840 MHz
100
6
RF Device Data
Freescale Semiconductor, Inc.
AFT18P350--4S2LR6
TYPICAL CHARACTERISTICS
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
14.5
17.5
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
17
16.5
10 100 200
10
-- 6 0
ACPR (dBc)
16
15.5
15
0
-- 3 0
-- 4 0
-- 5 0
Figure 7. Broadband Frequency Response
0
24
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA = 1000 mA
VGSB =1.2Vdc
16
12
8
GAIN (dB)
20
4
1500 1600 1700 1800 1900 2000 2100 2200 2300
Gain
ACPR
1805 MHz
1840 MHz
1880 MHz
1840 MHz
1880 MHz
1805 MHz
1840 MHz
1805 MHz
1880 MHz
D
Gps
VDD =28Vdc,I
DQA = 1000 mA
VGSB = 1.2 Vdc, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input
Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
AFT18P350--4S2LR6
7
RF Device Data
Freescale Semiconductor, Inc.
VDD =28Vdc,I
DQA = 1276 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1800 1.66 - j4.48 1.68 + j4.49 1.39 - j3.55 17.5 53.6 227 54.5 -11
1840 2.33 - j4.85 2.36 + j5.08 1.47 - j3.87 17.6 53.5 225 53.7 -11
1880 3.53 - j5.49 3.63 + j5.63 1.55 - j4.21 17.6 53.6 229 55.3 -11
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1800 1.66 - j4.48 1.62 + j4.65 1.38 - j3.74 15.3 54.4 276 56.8 -16
1840 2.33 - j4.85 2.35 + j5.32 1.46 - j4.07 15.3 54.4 272 55.5 -16
1880 3.53 - j5.49 3.75 + j6.00 1.57 - j4.37 15.4 54.4 277 57.3 -17
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 8. Single Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQA = 1276 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1800 1.66 - j4.48 1.77 + j4.81 3.13 - j2.02 20.4 51.4 139 65.6 -17
1840 2.33 - j4.85 2.56 + j5.32 2.91 - j2.41 20.2 51.6 146 64.2 -16
1880 3.53 - j5.49 3.98 + j5.87 2.61 - j2.54 20.1 51.7 148 65.6 -16
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
1800 1.66 - j4.48 1.73 + j4.80 3.06 - j2.93 17.8 52.8 190 67.3 -21
1840 2.33 - j4.85 2.53 + j5.48 2.88 - j2.69 17.9 52.6 183 66.6 -23
1880 3.53 - j5.49 4.06 + j6.19 2.55 - j2.65 18.0 52.5 180 67.8 -24
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 9. Single Side Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
8
RF Device Data
Freescale Semiconductor, Inc.
AFT18P350--4S2LR6
P1dB -- TYPICAL LOAD PULL CONTOURS — 1840 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Power Gain
Drain Efficiency
Linearity
Output Power
Figure 10. P1dB Load Pull Output Power Contours (dBm)
-- 6
REAL ()
0
-- 2
IMAGINARY ()
23406
-- 1
-- 3
-- 4
5
-- 5
1
Figure 11. P1dB Load Pull Efficiency Contours (%)
REAL ()
IMAGINARY ()
-- 6
0
-- 2
23406
-- 1
-- 3
-- 4
5
-- 5
1
Figure 12. P1dB Load Pull Gain Contours (dB)
REAL ()
IMAGINARY ()
-- 6
0
-- 2
23406
-- 1
-- 3
-- 4
5
-- 5
1
Figure 13. P1dB Load Pull AM/PM Contours ()
REAL ()
IMAGINARY ()
-- 6
0
-- 2
23406
-- 1
-- 3
-- 4
5
-- 5
1
P
49.5
50
50.5
51
51.5
52
52.5
53
E
60 58 56
54 52
50
48
P
E
48
62
20.5
21
20
19.5
19
18.5
18
17.5
P
E
21.5 -- 1 6
-- 1 4
-- 1 2
-- 1 0
-- 1 8
-- 2 0
-- 2 4
P
E
-- 2 2
-- 2 6
64
AFT18P350--4S2LR6
9
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL LOAD PULL CONTOURS — 1840 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Power Gain
Drain Efficiency
Linearity
Output Power
Figure 14. P3dB Load Pull Output Power Contours (dBm)
-- 6
REAL ()
0
-- 2
IMAGINARY ()
23406
-- 1
-- 3
-- 4
5
-- 5
1
Figure 15. P3dB Load Pull Efficiency Contours (%)
REAL ()
IMAGINARY ()
-- 6
0
-- 2
23406
-- 1
-- 3
-- 4
5
-- 5
1
Figure 16. P3dB Load Pull Gain Contours (dB)
REAL ()
IMAGINARY ()
-- 6
0
-- 2
23406
-- 1
-- 3
-- 4
5
-- 5
1
Figure 17. P3dB Load Pull AM/PM Contours ()
REAL ()
IMAGINARY ()
-- 6
0
-- 2
23406
-- 1
-- 3
-- 4
5
-- 5
1
P
E
50.5
50
51
51.5
52
52.5
53
53.5
54
64
58
56
54
52
P
E
62
60
50
66
50
19
18.5
18
17.5
17
16.5
16
15.5
P
E
19.5
-- 3 0 -- 2 8 -- 2 6 -- 2 4
-- 2 2
-- 2 0
-- 1 8
-- 1 6
P
E
-- 3 2
10
RF Device Data
Freescale Semiconductor, Inc.
AFT18P350--4S2LR6
PACKAGE DIMENSIONS
AFT18P350--4S2LR6
11
RF Device Data
Freescale Semiconductor, Inc.
12
RF Device Data
Freescale Semiconductor, Inc.
AFT18P350--4S2LR6
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Apr. 2013 Initial Release of Data Sheet
AFT18P350--4S2LR6
13
RF Device Data
Freescale Semiconductor, Inc.
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Rev. 0, 4/2013
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