SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. HN2DO1FU is composed of 3 independent diodes. * Low Forward Voltage Fast Reverse Recovery Time : : Vp=0.98V (Typ.) trp =1.6ns (Typ.) HN2D01FU Unit in mm nm Small Total Capacitance : Cp=0.5pF (Typ.) 3 8 PIN ASSIGNMENT (TOP VIEW) Marking 4 2 Fh 6 5 4 6 5 4 S : = H AA A A 8 1 3 3 y , a x At - | 3 = 7 | Ji H Ho H 8 4 3 4 1 2 38 1 2 3 - MAXIMUM RATINGS (Ta = 25C) 1. CATHODE 2. CATHODE iCh}-+4+414 CHARACTERISTIC SYMBOL | RATING | UNIT 3. CATHODE oct es : 4, ANODE ach eds Maximum (Peak) Reverse Voltage VRM 85 Vv 5. ANODE - Reverse Voltage VR 80 Vv 6. ANODE Maximum (Peak) Forward Current IFM 240* mA ||JEDEC Average Forward Current Io 80* mA |/EIAJ _ Surge Current (10ms) IFSM 1* A TOSHIBA 1-2T1iC Power Dissipation P 200 mw | Weight : 6.2mg Junction Temperature Tj 125 C Storage Temperature Tstg 55~125 C * :This is the Maximum Ratings of single diode(Q1 or Q2 or Q3). In the case of using 2 or 3 diodes, the Maximum Ratings per diode is 75% of the single diode one. ELECTRICAL CHARACTERISTICS (Q1 Q2 Q3 COMMON, Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT VF (1) Ip=imA _ 0.62 _ Forward Voltage VE (2) Ip=10mA _ 0.75 _ Vv VF (3) Ip=100mA 0.98 | 1.20 I VR=30V _ 0.1 Reverse Currunt RM) B uA IR (2) VR=80V _ _ 0.5 Total Capacitance Crp VrR=0, f=1MHz _ 0.5 3.0 | pF Reverse Recovery Time trr Ip=10mA (Fig. 1) _ 1.6 4.0 ns 1279HN2DO01FU Fig. 1: REVERSE RECOVERY TIME (tyr) TEST CIRCUIT INPUT OUTPUT WAVEFORM WAVEFORM 0.01uzF DUT _ 0 IN OUT Ip=10mA S OSCILLOSCOPE = -6V 0 (RIN =50Q) IR 0.1 Ip 50ns . PULSE GENERATOR tr (RouT=502) Ql, Q2, @3 COMMON QI, Q2, @8 COMMON Ip VE IR VR q & 2 e Re a Ta=100C 725 25 a oe a a4 iret 2 2 o oO a i te $ : zB 3 2 ae 0 0.2 0.4 a6 08 1.0 1.2 20 40 60 FORWARD VOLTAGE Vr (V) REVERSE VOLTAGE VR (V) Ql, Q2, Q3 COMMON Cy VR TOTAL CAPACITANCE Cry (pF) 0305 1 3.5 10 30 50 100 REVERSE VOLTAGE Vp () 1280