2SC5337-T1-AZ - RENESAS TECHNOLOGY

R09DS0047EJ0300 Rev.3.00 Page 1 of 5

Sep 14, 2012

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Preliminary Data Sheet

2SC5337

NPN Silicon RF Transistor for High-Frequency

Low Distortion Amplifier 4-Pin Power Minimold

FEATURES

• Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA

• Low noise

NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz

NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz

• 4-pin power minimold package with improved gain from the 2SC4536

ORDERING INFORMATION

Part Number Order Number Package Quantity Supplying Form

2SC5337 2SC5337-AZ 25 pcs (Non reel) • Magazine case

2SC5337-T1 2SC5337-T1-AZ

4-pin power

minimold

(Pb-Free) Note 1 kpcs/reel • 12 mm wide embossed taping

• Collector face the perforation side of the tape

Note Contains Lead in the part except the electrode terminals.

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter Symbol Ratings Unit

Collector to Base Voltage VCBO 30 V

Collector to Emitter Voltage VCEO 15 V

Emitter to Base Voltage VEBO 3.0 V

Collector Current IC 250 mA

Total Power Dissipation Ptot Note 2.0 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg −65 to +150 °C

Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate (Copper plating)

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

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ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

DC Characteristics

Collector Cut-off Current ICBO VCB = 20 V, IE = 0 – 0.01 5.0

Emitter Cut-off Current IEBO VBE = 2 V, IC = 0 – 0.03 5.0

DC Current Gain hFE Note 1 VCE = 10 V, IC = 50 mA 60 120 200 –

RF Characteristics

Insertion Power Gain ⏐S21e⏐2 VCE = 10 V, IC = 50 mA, f = 1 GHz 7.0 8.3 – dB

Noise Figure (1) NF Note 2 VCE = 10 V, IC = 50 mA, f = 500 MHz – 1.5 3.5 dB

Noise Figure (2) NF Note 2 VCE = 10 V, IC = 50 mA, f = 1 GHz – 2.0 3.5 dB

2nd Order Intermoduration Distortion IM2 VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,

Vin = 105 dB

V/75 Ω, f1 = 190 MHz,

f2 = 90 MHz, f = f1 − f2

– 59.0 – dB

3rd Order Intermoduration Distortion IM3 VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,

Vin = 105 dB

V/75 Ω, f1 = 190 MHz,

f2 = 200 MHz, f = 2 × f1 − f2

– 82.0 – dB

Notes 1. Pulse measurement: PW ≤ 350

s, Duty Cycle ≤ 2%

2. R

S = RL = 50 Ω, tuned

hFE CLASSIFICATION

Rank QR/YQR QS/YQS

Marking QR QS

hFE Value 60 to 120 100 to 200

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TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)

Mounted on Ceramic Substrate

(16 cm2 × 0.7 mm (t) )

2.0

1.0

050 100 150

Total Power Dissipation Ptot (W)

Ambient Temperature TA (˚C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

VCE = 10 V

DC Current Gain hFE

Collector Current IC (mA)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

300

100

10 1000.1 1 10 1 000

f = 1 MHz

Reverse Transfer Capacitance Cre (pF)

Collector to Base Voltage VCB (V)

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

5.0

2.0

3.0

0.3

1.0

0.5

135102030

Gain Bandwidth Product fT (GHz)

Collector Current IC (mA)

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

0.3

0.5

70 10010 30 50

VCE = 10 V

f = 1 GHz

VCE = 10 V

f = 1 GHz

Collector Current IC (mA)

vs. COLLECTOR CURRENT

INSERTION POWER GAIN

Insertion Power Gain |S21e|2 (dB)

010 30 50 70 100

Collector Current IC (mA)

Collector to Emitter Voltage VCE (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

100

010 20

IB = 0.6 mA 0.5 mA

0.4 mA

0.3 mA

0.2 mA

0.1 mA

Remark The graphs indicate nominal characteristics.

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Sep 14, 2012

VCE = 10 V

IC = 50 mA

Frequency f (GHz)

INSERTION POWER GAIN, MAG

vs. FREQUENCY

Insertion Power Gain |S21e|2 (dB)

Maximum Available Power Gain MAG (dB)

00.2 0.4 0.6 0.8 1.0 1.4 2.0

MAG

|S21e|2

05 10 20 50 100

Collector Current IC (mA)

NOISE FIGURE vs.

COLLECTOR CURRENT

Noise Figure NF (dB)

VCE = 10 V

f = 1 GHz

10 50 100 300

Collector Current IC (mA)

IM3, IM2+, IM2– vs.

COLLECTOR CURRENT

3rd Order Intermodulation Distortion IM3 (dB)

2nd Order Intermodulation Distortion (+) IM2+ (dB)

2nd Order Intermodulation Distortion (–) IM2– (dB)

IM2–

IM2+

IM3

= 10 V

: V

= 110 dB V/75 Ω 2 tone each

f = 2 × 190 – 200 MHz

: V

= 105 dB V/75 Ω 2 tone each

f = 90 + 100 MHz

2–

: V

= 105 dB V/75 Ω 2 tone each

f = 190 – 90 MHz

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the

parameters to microwave circuit simulators without the need for keyboard inputs.

Click here to download S-parameters.

[Products] → [RF Devices] → [Device Parameters]

URL http://www.renesas.com/products/microwave/

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PACKAGE DIMENSIONS

4-PIN POWER MINIMOLD (UNIT: mm)

1.5±0.1

0.25±0.02

4.5±0.1

2.1

1.6

0.8

0.42±0.060.42±0.06

0.3

2.45±0.1

0.1

0.8 MIN.

3.95±0.25

0.46

±0.06

3.0

1.5

0.85

1.55

E : Emitter

C: Collector

B : Base

PIN CONNECTIONS

All trademarks and registered trademarks are the property of their respective owners.

C - 1

Revision History 2SC5337 Data Sheet

Description

Rev. Date Page Summary

1.00 Mar 01, 1996 – First edition issued

2.00 Aug 28, 2001 – Second edition issued

2.10 Sep 06, 2001 – Second V1 edition issued

3.00 Sep 14, 2012 Throughout The company name is changed to Renesas Electronics Corporation.

p.1 Modification of ORDERING INFORMATION

p.2 Modification of ELECTRICAL CHARACTERIST I CS

p.2 Modification of hFE CLASSIFICATION

p.4 Modification of method for obtaining S-parameters

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