Reflexlichtschranke im SMT-Gehause Reflective Interrupter in SMT Package 4.2 3.8 2.1 1.7 0.15 0.13 0...0.1 6.2 5.8 3.4 3.0 SFH 9202 0.5 0.3 6 5 4 1 Anode 2 - 3 Emitter 1.27 spacing GEO06840 4 Collector 5 - 6 Cathode feo06840 1 2 3 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Optimaler Arbeitsabstand 1 mm bis 5 mm IR-GaAs-Lumineszenzdiode: Sender Si-NPN-Fototransistor: Empfanger Tageslichtsperrfilter Kollektor-Emitter-Strom typ. 0.2 mA Geringe Sattigungsspannung Sender und Empfanger galvanisch getrennt Features Optimal operating distance 1 mm to 5 mm IR-GaAs-infrared emitter Silicon NPN phototransistor detector Daylight filter against undesired light effects Collector-emitter current typ. 0.2 mA Low saturation voltage Emitter and detector electrically isolated Anwendungen Positionsmelder Endabschalter Drehzahluberwachung Bewegungssensor Applications Position reporting End position switch Speed monitoring Motion transmitter Typ Type ICE IF = 10 mA, VCE = 5 V, d = 1 mm Bestellnummer Ordering Code mA SFH 9202 Q62702-P5039 0.063 ... 0.32 SFH 9202-2/3 Q62702-P5009 0.063 ... 0.2 SFH 9202-3/4 Q62702-P5010 0.10 ... 0.32 Semiconductor Group 1 1998-08-25 SFH 9202 Grenzwerte Maximum Ratings Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Sperrspannung Reverse voltage VR 5 V Vorwartsgleichstrom Forward current IF 50 mA Verlustleistung Power dissipation Ptot 80 mW Dauer-Kollektor-Emitter-Sperrspannung Continuous collector-emitter voltage VCE 16 V Kollektor-Emitter-Sperrspannung, (t 1 min) Collector-emitter voltage, (t 1 min) VCE 30 Emitter-Kollektor-Sperrspannung Emitter-collector voltage VEC 7 Kollektorstrom Collector current IC 10 mA Verlustleistung Total power dissipation Ptot 100 mW Lagertemperatur Storage temperature range Tstg - 40 ... + 85 C Umgebungstemperatur Ambient temperature range TA - 40 ... + 85 Elektrostatische Entladung Electrostatic discharge ESD 2 Umweltbedingungen / Environment conditions 3 K3 acc. to EN 60721-3-3 (IEC 721-3-3) Semiconductor Group 2 Sender (GaAs-Diode) Emitter (GaAs diode) Empfanger (Si-Fototransistor) Detector (silicon phototransistor) Reflexlichtschranke Light reflection switch KV 1998-08-25 SFH 9202 Lothinweise Soldering conditions Bauform Type Drypack Level acc. to IPSstand. 020 SFH 9202 4 Tauch-, Schwalllotung Dip, wave soldering Reflowlotung Reflow soldering Kolbenlotung Iron soldering Peak temp. Max. time in Peak temp. Max. time in (Iron temp.) (solderbath) peak zone (package peak zone temp.) n. a. 245 C - 10 sec. 300 C < 5 sec. Bitte Verarbeitungshinweise fur SMT-Bauelemente beachten! Please observe the handling guidelines for SMT devices! Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Durchlaspannung Forward voltage IF = 50 mA VF 1.25 ( 1.65) V Sperrstrom Reverse current VR = 5 V IR 0.01 ( 1) A Kapazitat Capacitance VR = 0 V, f = 1 MHz CO 25 pF Warmewiderstand1) Thermal resistance1) RthJA 400 K/W Kapazitat Capacitance VCE = 5 V, f = 1 MHz CCE 5 pF Kollektor-Emitter-Reststrom Collector-emitter leakage current VCE = 20 V ICEO 1 ( 50) nA Fotostrom (Fremdlichtempfindlichkeit) Photocurrent (outside light density) VCE = 5 V, Ev = 1000 Lx IP 1 mA Semiconductor Group 3 Sender (GaAs-Diode) Emitter (GaAs diode) Empfanger (Si-Fototransistor) Detector (silicon phototransistor) 1998-08-25 SFH 9202 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Warmewiderstand1) Thermal resistance1) RthJA 400 K/W Kollektor-Emitterstrom ICE min. Collector-emitter current ICE typ. Kodak neutral white test card, 90 % Reflexion IF = 10 mA; VCE = 5 V; d = 1 mm 63 200 A A Kollektor-Emitter-Sattigungsspannung VCE sat Collector-emitter saturation voltage Kodak neutral white test card, 90 % Reflexion IF = 10 mA; d = 1 mm; IC = 20 A 0.15 ( 0.6) V Reflexlichtschranke Light reflection switch 1) 1) Montage auf PC-Board mit > 5 mm2 Padgroe Mounting on pcb with > 5 mm2 pad size d Reflector with 90% reflexion (Kodak neutral white test card) OHM02257 Semiconductor Group 4 1998-08-25 SFH 9202 Schaltzeiten (TA = 25 C, VCC = 5 V, IC = 100 A1), RL = 1 k) Switching times RL F C VCC Output OHM02258 Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Einschaltzeit Turn-on time tein ton 40 s Anstiegzeit Rise time tr 30 s Ausschaltzeit Turn-off time taus toff 45 s Abfallzeit Fall time tf 40 s 1) 1) IC eingestellt uber den Durchlastrom der Sendediode, den Reflexionsgrad und den Abstand des Reflektors vom Bauteil (d) IC as a function of the forward current of the emitting diode, the degree of reflection and the distance between reflector and component (d) I C ---------- = f (d ) I Collector current Cmax C Permissible power dissipation for diode and transistor Ptot = f (TA ) OHO02255 100 C max % OHO02260 160 Ptot Switching characteristics t = f (RL) TA = 25 oC, IF = 10 mA OHO01367 10 3 Total power dissipation t mW s t on t off 80 120 Detector 60 Emitter 80 10 2 40 40 20 Kodak neutral white test card Mirror 0 0 0 1 2 3 Semiconductor Group 4 mm 5 d 0 20 40 60 80 C 100 TA 5 10 1 0 10 10 1 k RL 10 2 1998-08-25 SFH 9202 Max. permissible forward current IF = f (TA) Transistor capacitance (typ.) CCE = f (VCE), TA = 25 oC, f = 1 MHz OHO02259 120 OHO00496 20 F mA C CE 100 Output characteristics (typ.) IC = f (VCE), spacing to reflector: d = 1 mm, 90% reflection, TA = 25 oC OHO01326 0.6 F = 25 mA C mA pF 0.5 F = 20 mA 15 80 0.4 F = 15 mA 60 0.3 10 40 F = 10 mA 0.2 5 20 0 0 20 40 60 80 C 100 0 -2 10 10 -1 10 0 10 1 V 10 2 V CE TA Forward voltage (typ.) of the diode VF = f (T) Relative spectral emission of emitter (GaAs) Irel = f () and detector (Si) Srel = f () OHO02256 1.30 VF F = 5 mA 0.1 OHO00786 100 rel S rel % V 0 0.1 10 0 10 1 V VCE Collector current IC = f (IF), spacing d to reflector = 1 mm, 90% reflection OHO01324 300 C A 1.25 80 F = 20 mA 10 mA 1.20 200 60 5 mA 1.15 Detector 40 100 1.10 VCE = 5 V 20 1.05 Emitter 1 -40 -20 0 20 40 60 Semiconductor Group C T 100 0 700 800 900 1000 nm 1100 6 0 0 4 8 12 16 mA 20 F 1998-08-25