SFH 206 K
Silizium-PIN-Fotodiode
Silicon PIN Photodiode
Lead (Pb) Free Product - RoHS Compliant
2007-03-30 1
Wesentliche Merkmale
Speziell geeignet für Anwendunge n im Bereich
von 400 nm bis 1100 nm
Kurze Schaltzeit (typ. 20 ns)
5-mm-Plastikbauform im LED-Gehäuse
Auch gegurtet lieferbar
Anwendungen
Computer-Blitzlichtgeräte
Lichtschranken für Gleich- und
Wechsellichtbetrieb
Industrieelektronik
„Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code
SFH 206 K Q62702P0129
Features
Especially suitable for applications from
400 nm to 1100 nm
Short switching time (typ. 20 ns)
•5 mm LED plastic package
Also available on tape and reel
Applications
Computer-controlled flashes
Photointerrupters
Industrial electronics
For control and drive circuits
2007-03-30 2
SFH 206 K
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40+ 100 °C
Sperrspannung
Reverse voltage VR32 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 150 mW
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Fotoempfindlichkeit, VR = 5 V
Spectr al sensitivity S80 (50) nA/Ix
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 850 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of s ensitivity
S = 10% of Smax
λ4001100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A7.00 mm2
Abmessung der bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area L × B
L × W2.65 × 2.65 mm × mm
Halbwinkel
Half angle ϕ ± 60 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR2 ( 30) nA
Spektrale Fotoempfindlichkeit, λ = 850 nm
Spectr al sensitivity Sλ0.62 A/W
Quantenausbeute, λ = 850 nm
Quantum yield η0.90 Electrons
Photon
Leerlaufspannung, Ev = 1000 Ix
Open-circuit voltage VO365 (310) mV
Kurzschlußstrom, Ev = 1000 Ix
Short-circuit current ISC 80 μA
SFH 206 K
2007-03-30 3
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 μA
tr, tf20 ns
Durchlaßspannung, IF = 100 mA, E = 0
Forward voltage VF1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C072 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TCI0.18 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, λ = 850 nm
NEP 4.2 × 10– 14
Nachweisgrenze, VR = 10 V, λ = 850 nm
Detection limit D* 6.3 × 1012
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
W
Hz
------------
cm Hz×
W
--------------------------
SFH 206 K
2007-03-30 4
Relative Spectral Sensitivity
Srel = f (λ)
Dark Current
IR = f (VR), E = 0
Directional Characteristics
Srel = f (ϕ)
λ
OHF00078
0
rel
S
400
20
40
60
80
%
100
500 600 700 800 900 nm 1100
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit Voltage VO = f (Ev)
Capacitance
C = f (VR), f = 1 MHz, E = 0
Total Power Dissipation
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 10 V, E = 0
T
OHF00394
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10 0
R
Ι
10
0
10
1
10
2
10
3
nA
20 40 60 80 ˚C 100
SFH 206 K
2007-03-30 5
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
6.9 (0.272)
6.3 (0.248)
0.8 (0.031)
4.0 (0.157)
34 (1.339)
32 (1.260)
1.8 (0.071)
1.2 (0.047)
0.8 (0.031)
0.4 (0.016)
2.54 (0.100)
spacing
0.6 (0.024) x 0.5 (0.020)
0.4 (0.016) x 0.3 (0.012)
4.1 (0.161)
3.7 (0.146)
5.1 (0.201)
4.7 (0.185)
Cathode
Area not flat Radiant sensitive area
GEOY6647
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
2007-03-30 6
SFH 206 K
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
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The information describes the type of component and shall not be considered as as sured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
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components 1 , may only be use d in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.