MPSD55 MAXIMUM RATINGS Rating Symbol Value Unit CASE 29-04, STYLE 1 Collector-Emitter Voltage VcEO 26 Vde TO-92 (TO-226AA) Collector-Base Voltage Veao 25 Vide Collector Current Continuous le 600 mAdc Toul Davis Daspaton @Ta= 25 [| PD | SE | at cote Total Device Dissipation @ Tc = 25C Pp 1.6 Watts Derate above 25C 12 mWrc y Operating and Storage Junction Ty: Tstg | +65 to +160 C Temperature Range i : 1 Emitter THERMAL CHARACTERISTICS Characteristic Symbol Max Unit AMPLIFIER TRANSISTOR Thermal Resistance, Junction to Case Rac 83.3 "CW PNP SILICON Thermal Resistance, Junction to Rad 200 C Ambilent(1) ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Refer to 2N4400 for MPSDO5 graphs." { Characteristic | Symbol | Min Max | Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage ViBRICEO 26 Vde (ic = 1.0 mAde, Ig = 0) Collector-Base Breakdown Voltage ViBRICBO 25 ~ Vde {le = 10 pAde, Ie = 0) Collector Cutoff Current IcEO _- 1.0 pAdc (VcE = 20 Vde) Collector Cutoff Current Icgo 1.0 pAde (Veg = 20 Vde, le = 0) Emitter Cutoff Current leno ~ 100 nAdc (Veg = 3.0 Vde, Ic = 0) ON CHARACTERISTICS(2) BC Current Gain FE _ (lg = 50 mAde, Vog = 5.0 Vdc) 50 _ tic = 100 mAde, Vce = 5.0 Vde) 80 _- {le = 500 mAde, Voce = 5.0 Vdc) 30 oo Collector-Emitter Saturation Voltage VcE(sat} - 0.5 Vde (Ic = 100 mAdc, Ig = 10 mAdc} SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product (i = 50 mAdc, Vcg = 10 Vde, fT 100 _ MHz f = 100 MHz) (1) Rasa is measured with the device soldered into a typical printed circult board. {2} Pulse Test: Pulse Width < 300 ps, Duty Cycle =< 2.0%. *Refer to 2N4402 for MPSD55 graphs. MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES