Number: DB-087
January 2013, Revision E
Page 1
TAK CHEONG ®
SEMICONDUCTOR
200mW SOD-323 SURFACE MOUNT
Small Outline Flat Lead Plastic Package
Zener Voltage Regulators
Green Product
Absolute Ma ximum Ra ti ng s TA = 25°C unless otherwise noted
Symbol Parameter Value Units
PD Power Dissipation 200 mW
TSTG Storage Temperature Range -65 to +150 °C
TOPR Operating Temperature Range -65 to +150 °C
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Wide Zener Voltage Range Selection, 2.0V to 75V
VZ Tolerance Selection of ±5% (C Series)
Flat Lead SOD-323 Small Outline Plastic Package
Surface Device Type Mounting
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Band Indicates Cathode
Electrical Characteristics TA = 25°C unless otherwise noted
VZ @ IZT
(Volts)
Device
Type Device
Marking Min Nom Max
IZT
(mA)
ZZT @ IZT
(Ω)
Max
IZK
(mA)
ZZK @ IZK
(Ω)
Max
IR @ VR
(μA)
Max
VR
(Volts)
MM3Z2V0CW Z+ 1.90 2.0 2.10 5 100 1 564 120 0.5
MM3Z2V2CW Z⊥ 2.09 2.2 2.31 5 100 1 564 120 0.7
MM3Z2V4CW Z0 2.28 2.4 2.52 5 100 1 564 45 1
MM3Z2V7CW Z1 2.57 2.7 2.84 5 100 1 564 18 1
MM3Z3V0CW Z2 2.85 3.0 3.15 5 100 1 564 9 1
MM3Z3V3CW Z3 3.14 3.3 3.47 5 95 1 564 4.5 1
MM3Z3V6CW Z4 3.42 3.6 3.78 5 90 1 564 4.5 1
MM3Z3V9CW Z5 3.71 3.9 4.10 5 90 1 564 2.7 1
MM3Z4V3CW Z6 4.09 4.3 4.52 5 90 1 564 2.7 1
MM3Z4V7CW Z7 4.47 4.7 4.94 5 80 1 470 2.7 2
MM3Z5V1CW Z8 4.85 5.1 5.36 5 60 1 451 1.8 2
MM3Z5V6CW Z9 5.32 5.6 5.88 5 40 1 376 0.9 2
MM3Z6V2CW ZA 5.89 6.2 6.51 5 10 1 141 2.7 4
MM3Z6V8CW ZB 6.46 6.8 7.14 5 15 1 75 1.8 4
MM3Z7V5CW ZC 7.11 7.5 7.86 5 15 1 75 0.9 5
MM3Z8V2CW ZD 7.79 8.2 8.61 5 15 1 75 0.63 5
MM3Z9V1CW ZE 8.65 9.1 9.56 5 15 1 94 0.45 6
MM3Z10VCW ZF 9.50 10 10.50 5 20 1 141 0.18 7
MM3Z11VCW ZG 10.45 11 11.55 5 20 1 141 0.09 8
MM3Z12VCW ZH 11.40 12 12.60 5 25 1 141 0.09 8
ELECTRICAL SYMBOL
MM3Z2V0CW through MM3Z75VCW
Cathode
Anode
SOD-323 Flat Lead
Number: DB-087
January 2013, Revision E
Page 2
TAK CHEONG ®
SEMICONDUCTOR
Electrical Characteristics TA = 25°C unless otherwise noted
VZ @ IZT
(Volts)
Device
Type Device
Marking Min Nom Max
IZT
(mA)
ZZT @ IZT
(Ω)
Max
IZK
(mA)
ZZK @ IZK
(Ω)
Max
IR @ VR
(μA)
Max
VR
(Volts)
MM3Z13VCW ZJ 12.35 13 13.65 5 30 1 160 0.09 8
MM3Z15VCW ZK 14.25 15 15.75 5 30 1 188 0.045 10.5
MM3Z16VCW ZL 15.20 16 16.80 5 40 1 188 0.045 11.2
MM3Z18VCW ZM 17.10 18 18.90 5 45 1 212 0.045 12.6
MM3Z20VCW ZN 19.00 20 21.00 5 55 1 212 0.045 14.0
MM3Z22VCW ZP 20.90 22 23.10 5 55 1 235 0.045 15.4
MM3Z24VCW ZR 22.80 24 25.20 5 70 1 235 0.045 16.8
MM3Z27VCW ZS 25.65 27 28.35 2 80 0.5 282 0.045 18.9
MM3Z30VCW ZT 28.50 30 31.50 2 80 0.5 282 0.045 21.0
MM3Z33VCW ZU 31.35 33 34.65 2 80 0.5 306 0.045 23.0
MM3Z36VCW ZV 34.20 36 37.80 2 90 0.5 329 0.045 25.2
MM3Z39VCW ZW 37.05 39 40.95 2 130 0.5 329 0.045 27.3
MM3Z43VCW ZX 40.85 43 45.15 2 150 0.5 353 0.045 30.1
MM3Z47VCW ZY 44.65 47 49.35 2 170 0.5 353 0.045 33.0
MM3Z51VCW Z− 48.45 51 53.55 2 180 0.5 376 0.045 35.7
MM3Z56VCW Z= 53.20 56 58.80 2 200 0.5 400 0.045 39.2
MM3Z62VCW Z≡ 58.90 62 65.10 2 215 0.5 423 0.045 43.4
MM3Z68VCW Z> 64.60 68 71.40 2 240 0.5 447 0.045 47.6
MM3Z75VCW Z< 71.25 75 78.75 2 255 0.5 470 0.045 52.5
VF Forward Voltage = 1 V Maximum @ IF = 10 mA for all types
Notes:
1. The Zener Voltage (VZ) is tested under pulse condition of 10mS.
2. The device numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter
voltage tolerances, contact your nearest Tak Cheong Electronics representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to
10% of the dc zener current (IZT or IZK) is superimposed to IZT or IZK.
Number: DB-087
January 2013, Revisi on E
Page 3
TAK CHEONG ®
SEMICONDUCTOR
RATI NG AND CHAR ACTERIST IC CURVES
Fig.1 TYPICAL FORWARD VOLTAGE Fig.2 EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE
Fig.4 T YPICAL CAP ACITANCE
Fig.5 ZENER BREAKDOWN CHARACTERISTICS
Fig.6 ZENER BREAKDOWN CHARACTERISTICS
0
50
100
150
200
250
0 25 50 75 100 125 150 175 200
TEMPE RATURE [℃]
POW E R P AS S I P ATI ON, mW
Fig.3 POWER DISSIPATION VS. AMBIENT TEMP.
Number: DB-087
January 2013, Revisi on E
Page 4
TAK CHEONG ®
SEMICONDUCTOR
SOD-323 Package Outline
NOTES:
1. The above package outline is similar to JEITA SC-90.
2. Dimensions are exclusive of Burrs, Mold Flash & Tie Bar extrusions.
Fig.7 TYPICAL LEAKGE CURRENT
Number: DB-100
April 14, 2 008 / A
DISCLAIMER NOTICE
TAK CHEONG ®
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunctio n of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information re viously supplied. For additio nal information , please visit
our website http://www.takcheong.com, o r consu lt your ne ares t Tak Cheong’s sales off ic e for further assis t anc e.
