SKM 800GA125D " Absolute Maximum Ratings Symbol Conditions IGBT 8 6 14 7 8 6 +4, 7 *= *=61) 6 147' % Ultrafast IGBT Modules SKM 800GA125D Units +1,, " 6 14 7 :(, 5 " 6 ;, 7 4<, 5 +1,, 5 > 1, +, A 6 (,, ? 3 1, ? " @ +1,, "# / Values SEMITRANS(R) 4 ! 8 6 +14 7 Inverse Diode B 8 6 +4, 7 B*= B*=61)B B 6 +, ? C = " 6 14 7 :1, 5 " 6 ;, 7 4,, 5 +1,, 5 4:,, 5 4,, 5 D, CCC E+4, +14 7 +14 7 D,,, 8 6 +4, 7 Module *= Features ! ! " ##" ! "!" "$%&' %# % ( ) Typical Applications* * ! ! +,, -. / " % "! " %/ ! # 0 1, -. Remarks 2 3 4,, 5 % / $& ! % - "! # ! % " / $& !& / " " 8 5' + C % Characteristics Symbol Conditions IGBT 6 ' 6 1D 5 6 , ' 6 " 6 147' 8 6 14 7 % ! min. typ. max. D'4 4'4 ('4 ,'1 ,'( 5 8 6 +14 7 , ! 6 +4 +'4 8 6 +14 7 +': 8 6 147 1'; 8 6 +147 8 6 +147"% 6 14' 6 , # 6 + =. ! * / ! /## # 8 6 7 * 6 ,'4 F *## 6 ,'4 F ## *8" ! 6 (,, 6 (,,5 8 6 +14 7 6 > +4 Units 5 8 6 14 7 6 (,, 5' 6 +4 8 6 147"% "# / C C +':4 <'< F <'; 4'D F <'1 <':4 D <: 4'( B B 1'; B +': G ;; H D; H ,',< IJK GA 1 28-04-2009 NOS http://store.iiic.cc/ (c) by SEMIKRON SKM 800GA125D Characteristics Symbol Conditions B 6 B 6 (,, 5? 6 , min. 8 6 14 7"% 8 6 +14 7"% B, !B (R) SEMITRANS 4 Ultrafast IGBT Modules **= M!! B 6 (,, 5 !! 6 , ? 6 (,, *8"2 ! // C C typ. max. Units 1'< 1'4 1'+ 1'< 8 6 14 7 +'+ +'< 8 6 +14 7 ,'L +',4 8 6 14 7 1 1 F 8 6 +14 7 1 1'+ F 8 6 14 7 <:, ;< 5 A 1; H ,',: Module N SKM 800GA125D 1, *OEO *" ! C' ! %" - =( = ! % =(=D ! ! " ##" ! "!" "$%&' %# % ( ) Typical Applications* * ! ! +,, -. / " % "! " %/ ! # 0 1, " 6 14 7 ,'+; F " 6 +14 7 ,'11 F ! / % = Features IJK ,',<; IJK < 4 1'4 +'+ 4 1 <<, This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. -. Remarks 2 3 4,, 5 % / $& ! % - "! # ! % " / $& !& / " " GA 2 28-04-2009 NOS http://store.iiic.cc/ (c) by SEMIKRON SKM 800GA125D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 28-04-2009 NOS http://store.iiic.cc/ (c) by SEMIKRON SKM 800GA125D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT and diode Fig. 10 CAL diode forward characteristic Fig. 11 CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge 4 28-04-2009 NOS http://store.iiic.cc/ (c) by SEMIKRON SKM 800GA125D UL Recognized 2 4L 2 4L 5 File no. E 63 532 5 28-04-2009 NOS http://store.iiic.cc/ (c) by SEMIKRON