SEMITRANS®4
Ultrafast IGBT Modules
SKM 800GA125D
Features
!!
"##"
! "!" "$%&' %#
% ( )
Typical Applications*
* !! +,, -.
/"
%"!" %/! # 0 1,
-.
Remarks
2 3 4,, 5 %/ $& !%
- "! # ! % "/
$& !& /""
GA
Absolute Maximum Ratings " 6 147' % ! "#/
Symbol Conditions Values Units
IGBT
86 14 7 +1,,
86 +4, 7 " 6 14 7 :(, 5
" 6 ;, 7 4<, 5
*= *=61) +1,, 5
> 1,
" 6 (,, ? 3 1, ?
@ +1,,
86 +14 7 +, A
Inverse Diode
B86 +4, 7 " 6 14 7 :1, 5
" 6 ;, 7 4,, 5
B*= B*=61)B +1,, 5
B= 6 +, ? C 86 +4, 7 4:,, 5
Module
*= 4,, 5
8 D, CCC E+4, +14 7
+14 7
% 5' + C D,,,
Characteristics " 6 147' % ! "#/
Symbol Conditions min. typ. max. Units
IGBT
6 ' 6 1D 5 D'4 4'4 ('4
6,' 6 86 14 7 ,'1 ,'( 5
86 +14 7 5
, 86 14 7 +'4 +':4
86 +14 7 +':
! 6 +4 86 147 1'; <'< F
86 +147 <'; 4'D F
6 (,, 5' 6 +4 86 147"% C <'1 <':4
86 +147"% C D
<: B
6 14' 6 , # 6 + =. 4'( B
! 1'; B
* 86 7 +': G
/
!* 6 ,'4 F 6 (,,
6 (,,5 ;; H
/## *## 6 ,'4 F 86 +14 7
# 6 > +4
## D; H
*8" ! ,',< IJK
SKM 800GA125D
1 28-04-2009 NOS © by SEMIKRON
http://store.iiic.cc/
SEMITRANS®4
Ultrafast IGBT Modules
SKM 800GA125D
Features
!!
"##"
! "!" "$%&' %#
% ( )
Typical Applications*
* !! +,, -.
/"
%"!" %/! # 0 1,
-.
Remarks
2 3 4,, 5 %/ $& !%
- "! # ! % "/
$& !& /""
GA
Characteristics
Symbol Conditions min. typ. max. Units
B6 B 6 (,, 5? 6 , 86 14 7"% C 1'< 1'4
86 +14 7"% C 1'+ 1'<
B, 86 14 7 +'+ +'<
86 +14 7 ,'L +',4
!B86 14 7 1 1 F
86 +14 7 1 1'+ F
**= B6 (,, 5 86 14 7 <:, 5
M!! ;< A
!! 6,? 6 (,, 1; H
*8"2 ! // ,',: IJK
Module
N 1,
*OEO !C' !%" "6 14 7 ,'+; F
"6 +14 7 ,'11 F
*" ! /% ,',<; IJK
= - =( < 4
= !% =(=D 1'4 +'+ 4 1
<<,
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
SKM 800GA125D
2 28-04-2009 NOS © by SEMIKRON
http://store.iiic.cc/
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 800GA125D
3 28-04-2009 NOS © by SEMIKRON
http://store.iiic.cc/
Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and diode Fig. 10 CAL diode forward characteristic
Fig. 11 CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge
SKM 800GA125D
4 28-04-2009 NOS © by SEMIKRON
http://store.iiic.cc/
UL Recognized File no. E 63 532
2 4L
2 4L 5
SKM 800GA125D
5 28-04-2009 NOS © by SEMIKRON
http://store.iiic.cc/
