TELEFUNKEN ELECTRONIC Sd . TELEFUNKEN electroni Creatrve Technologies Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: @ BE 421S complementary to BF 4208S @ Constant A, at = 10 pA...10 mA Dimensions in mm techescsl drevrings Y according 12 OHH specHicabone _ | +2.64 86.2 5 Absolute maximum ratings Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation Riya S150 KW, Tony 25 C Junction temperature Storage temperature range Maximum thermal resistances Junction ambient {<3 mm on copper cooling area = 10 mmx10 mm with 35 pm thickness 71.2/1016,0888 E 2544 6-05 T-3I-23 @ BF 4235 complementary to BF 422S Vege Vero . Veo ly vlow oon tg Pinan Standard plastic case 10 A3 DIN 41868 JEDEC TO 922 Weight max. 0.2 g BF 421S BF 4238S 300 250 Vv 300 250 5 Vv 25 ~ mA 100 mA 830 mw 150 ba 65...+150 C 150 K/W 23. W7E D aa2004b po0%407 9 MEALGG BF 421S-BF423S_ i 1 | i | a perenne sith 9H LeeAijeakesee ols @ fel ents pammtineat TELEFUNKEN ELECTRONIC BF 421S- BF 4238S Characteristics Tab = 26 C, unless otherwise specified Collector cut-off current Vog = 250V - BF421S -log -Vog = 200 V BF423S -Iou5 Veg = 200 V; Ape = 2,7 kQ, i = 160C loca Emitter cut-off current Vues 5 V lego Collector-base breakdown voltage -lg= 10 pA BF 4218S ~Visnycao BF423S -Viemceo Collector-emitter breakdown voltage k= 1mA BF 421S Visriceo BF 423S ~Visnjceo DC forward current transfer ratio Vog = 20 V-(, = 25 mA eg Gain bandwidth product Vop= 10 V, -/,=10mA i, Feedback capacitance Vo, = 30 V, [= 0, f= 1.0 MHz Cros Feedback time constant Veg = 20 V, -/, = 10 mA, f= 10.7 MHz To bre Collector saturation RF voltage -I,=25 mA, T= 180C ~Vocast HF 24 2545 6-06 Min. 300 250 300 250 50 60 Typ. 90 1.1 20 Max. 50 50 10 10 1.6 70 BSS << << MHz pF ps 17E D MM 8920056 0005408 0 MMALGG T-FN-23 LT mM A eeNELEFUNKEN ELECTRONIC -17E DMM 892009 OODGH0S 2 MMALGG BF 421S - BF 423$S TTIUILZZ : I IcER mW nA 600 enone 400 200 Tamb >- Tamb=25 C 100 10 9 1 O.1 10 mA 0.01 2546 6-07 28TELEFUNKEN ELECTRONIC BF 421S - BF 423S A7E D MM 4920096 0009410 9 MBALGG | 7-31-23 100 MHz 30V ~Yeemtovy 20 10 1 10 mA 26 2547 6-08 at * t ae acece Ci2e pF ino f= MHz Tease = 25C 0 10 ~20.~==30V YE sa teeters finely heed Frys cepee mental mpm mientras Mneae otter he Eat inked onan damnation Mieka ackito pet owTELEFUNKEN ELECTRONIC = =617E D Ml 8920056 0005380 4 MmMALGG @ Family ofcurves _ . ] 1 -20 Besides the static (d. .) and dynamic {a. c.) charac- paste ao AEG CORP teristics, family of curves are given for specified = operating conditions. They show the typical inter- depedence of individual characteristics. Partly are given the scattering limits. They signify that at least 95% of the delivery lies inside these tolerances. . 6.6. Additional informations Preliminary specifications This heading indicates that some information on the device concerned maybe subject to slight chan- ges. Not for new developments This heading indicates that the device concerned should not be used in equipment under develop- ment, it is, however, available for prasent produc- tion. "7. Taping and reeling 7.1. Taping of TO-92 transistors Standard reeling: Taped on reel, reeled together with a paper film. 7.1.1, Order Numbers Add the taping-code to the order number. Example: 1 BC238C DU 06} t Zz Order-No. of Type Code for TO-92 Transistors | Orientation of transistor on tape "? Additional marking for specials 2) 1 06 = View on flat side of transistor, view on gummed tape O5 = View on round side of transistor, view on gummed tape 9) Additional marking O" : Taping without paper film Additional marking 2: Zigzag folded tape inspecial box. Marking for orientation of transistor not necessary, because box can be opened on top or botton. Example for order No.: BC 237C DUZ 2517 E~06 144 Fig. 7.1, Dimensions of reel in mm ensasee Fig. 7.2. Dimension of box for Zigzag folding inmm weap wane Fig. 7.3. Dimensions of tape in mm 7.1.2 Quantity of devices 1000 devices per reel 2.000 devices per folded tape in special box. 7.2 Taped transistors in SOT 23 and SOT 143 case a) Standard taping Designation is attached with code GS 08 in case of standard taping. Example for normal version transistors as standard taped: BF 569- Gsos. Example for R-version transistors as standard taped: BF 569 R-GS 08. In case of standard taping, the transistor orienta- tion on the tape is shown in Fig. 7.4 and Fig. 7.5. rece fe ee 8 ereemrernntate aint me weeds fb petamense tie dimer SmaI hs ene aay ee pepe AQ ee htI = L7E D Mm 492005. De-resiing direction oacnsee Fig. 7.4 Standard taped SOT 23 ensesee 0009381 & BMALGG | Fig. 7.6 Reverse taped SOT 23 -De-reating direction . 18 1 ' sue Se ee Sy Cn raccn accanynd | ra 1g pot Liwod ot J YH aap eh aL Brus 17 writen aimee eet tm wade | e + LTGser i wtb = eats a we] asus { _ ea sO 3095 }) 208 estas Lassa] BSSEE soa || Fig. 7.6 Standard taped SOT 143 Fig. 7.7 Dimensions of tape in mm : b} Reverse taping : Desigantionis attached with codeGS07 incase veuene of reverse taping. Example for normal version ast ase 5 transistors as reverse taped: BF 569 R-GS 07. . ae 3 Example for R-version transistors as reverse ta- y | soeant : ing: BF 569 R-GS 07. asae : ping Vg Sy, i In case of reverse taping, the transistor orientation HL $F ataus : on the tape is shown in Fig. 6. Cees, a Regarding MOF-FET and MES-FET devices, reverse + te ~ 3 taping is at present not available. j 300. iszgt . Fig. 7.8 Dimensions of reel in mm 7.2.2 Quantity of devices 8. Assessories 3000 devices per ree! Number Fig. Designation For case 119880 8.1. Isolating washer thickness 60 pm 12A3 DIN 41869 JEDEC TO 126 (SOT 32) 564542 8.2. Isolating washer thickness 50 pm 14A3 DIN 41 869 - JEDEC TO 220 (SOT 78) 912884 83 Isolating washer thickness 50 pm 15A3 DIN 41869 (TOP 3) for clip mounting 191131 8.4 Isolating washer thickness 50 pm 15A 3 DIN 41869 (TOP 3) for screw mounting 191140 8.5 Mounting clip 15A3 DIN 41869 (TOP3) 669624 8.6 lsolating washer thickness 100 pm +50um 38 2 DIN 41872 JEDEC TO 3 Devices with high reverse voltage E-07 A28 2518 v