ZTX653DCSM NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) 1 4 A 6 5 6.22 0.13 (0.245 0.005) 0.23 rad. (0.009) * DUAL SILICON PLANAR NPN 4.32 0.13 (0.170 0.005) 3 2 FEATURES 1.40 0.15 (0.055 0.006) 1.65 0.13 (0.065 0.005) 0.64 0.06 (0.025 0.003) 2.54 0.13 (0.10 0.005) 2.29 0.20 (0.09 0.008) A = 1.27 0.13 (0.05 0.005) TRANSISTORS * HERMETIC SURFACE MOUNT PACKAGE * CECC SCREENING OPTIONS * SPACE QUALITY LEVEL OPTIONS LCC2 PACKAGE Underside View PAD 1 - Collector 1 PAD 2 - Base 1 PAD 3 - Base 2 PAD 4 - Collector 2 PAD 5 - Emitter 2 PAD 6 - Emitter 1 ABSOLUTE MAXIMUM RATINGS PER SIDE (TC = 25C unless otherwise stated) VCBO Collector - Base Voltage 120V VCEO Collector - Emitter Voltage 100V VEBO Emitter - Base Voltage 5V IC Continuous Collector Current 2A PTOT Power Dissipation @ Tamb = 25C Derate above 25C 1.0W -55 to 150C TjTSTG Operating And Storage Temperature Range 8mW/C RJ-A Junction - Ambient Thermal Resistance 125C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3517 Issue 2 ZTX653DCSM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter Test Conditions Min. V(BR)CBO Collector - Base Breakdown Voltage IC = 100A 120 V(BR)CEO Collector - Emitter Breakdown Voltage IC = 10mA 100 V(BR)EBO Emitter - Base Breakdown Voltage ICBO Collector - Cut-off Current IEBO Emitter Cut-off Current IE = 100A Max. Unit V 5 VCB = 100V 0.1 TC = 100C 10 VEB = 4V IC = 500mA VCE(sat) Typ. 0.1 IB = 50mA* 0.2 0.3 IB = 100mA* 0.35 0.5 IC = 2A IB = 200mA* 0.8 1.0 Collector - Emitter Saturation Voltage IC = 1.0A VBE(sat) Base - Emitter Saturation Voltage IC = 1.0A IB = 100mA* 1.0 1.3 VBE(on) Base - Emitter Turn-On Voltage IC = 1.0A VCE = 2V* 0.95 1.2 IC = 50mA VCE = 2V* 70 200 IC = 500mA VCE = 2V* 100 200 IC = 1.0A VCE = 2V* 55 110 IC = 2A VCE = 2V* 25 55 HFE DC Current Gain A 300 V -- * Pulse test tp = 300ms , 2% DYNAMIC CHARACTERISTICS Parameter (TA = 25C unless otherwise stated) Test Conditions fT Transition Frequency IC = 100mA VCE = 5V Cobo Output Capacitance VCB = 10V f = 1.0MHz Ton Switching Times IC = 500mA VCC = 10V Toff Switching Times IB1=IB2=50mA f = 100MHz Min. Typ. Max. Unit 140 175 MHz 30 80 1200 pF ns Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3517 Issue 2