1CGD15HB62P Rev -
Dual Channel SiC MOSFET Driver
Gate Driver for 1200V SiC MOSFET Power Module
Features
2 output channels
Isolated power supply
Direct mount low inductance design
Short circuit protection
Under voltage protection
For use with Cree Module
CAS300M12BM2, 1200V, 300A module.
Applications
Driver for 1.2kV, SiC MOSFET modules
DC Bus voltage up to 900V
Absolute Maximum Ratings
Symbol Parameter Value Unit Test Conditions
Note
Vs
Power Supply Voltage
16
V
ViH Input signal voltage
HIGH
5 V
ViL Input signal voltage
LOW
0 V
IO.pk
Output peak current
9
A
IO.avg.max
Ouput average current
2
A
FMax Max. Switching
frequency 32 (64)* kHz
*Can be increased to 64kHz
by replacing the 1W isolated
power supply with a 2Watt
version R12P212D from
Recom.
VDS
Max. Drain to source
voltage
1200
V
Visol
Input to output
isolation voltage
±1200
V
Top
Operating temperature
-35 to 85
ºC
Tstg
Storage temperature
-40 to 85
ºC
Part Number Package Marking
CGD15HB62P PCBA CGD15HB62P Rev2
2CGD15HB62P Rev -
Characteristics
Symbol Parameter
Value
Unit Test Conditions Notes
Min
Typ
Max
VS Supply voltage 13.0 15.0 16.0 V
Vi
Input signal voltage
on/off
5/0 V
ISO Supply current (no load)
Supply current (max.)
140 170 mA 85
ºC
320
400
85 ºC
ViT+ Input threshold voltage
HIGH 3.5 V
ViT-
Input threshold voltage
LOW
1.5 V
Tdon Turn on propogation
delay
210 280 nS
Tdoff Turn off propogation
delay
207 285 nS
Terr
Pulse width for resetting
fault
800 nS
W
Weight
63
g
MTBF Mean time between
failure
1.5 106h
Block Diagram
Note: Default gate resistor for Rg is 10 for the gate ON and OFF. The user can control the gate turn
ON and OFF speed by changing Rg to a lower value and gain better efficiency. The user can also
control the Gate turn-ON and OFF speed independently by populating Rg.off and D1.
X1: Common
1,3,5,7,9,11,13,15,17,19,21,23
X1: Vs
18,20,22,24
X1: Gate Upper
2
X1: Gate Lower
10
X1: RDY Upper
6
X1: RDY Lower
14
X1: /FLT Upper
8
X1: /FLT Lower
16
X1: /RST Upper
4
X1: /RST Lower
12
X11: DESAT Lower
X10: DESAT Upper
X30: Gate U
X20: Gate L
X21: Source L (Gate RTN)
X31: Source U (Gate RTN)
Rg
Rg.off
D1
4.7k
Rg
Rg.off
D1
4.7k
LR: +10V
IXDN609SI
1ED020I12-F2
LR: +5V
IXDN609SI
1ED020I12-F2
LR: +10V
LR: +12V
20V
-5V
20V
-5V
3CGD15HB62P Rev -
Typical Application
Mounting Instructions
Designed to directly mount to Cree 62 mm style power modules. Four (4)
mounting holes for 4x M4-8, Nylon screws are provided to secure the board
to a bracket or enclosure (0.5 Nm) for additional support.
External wires with spade style connectors should be used to connect the
Desat detect pins (X10 & X11) from the module to the gate drive board.
3
2
1
4
6
5
7
CPU
X10
X30
X31
X11
X20
X21
X1
CGD15HB62P
2-Ch Driver
Vs, PWM, /RST
/FLT, RDY
CAS300M12BM2
Cree 62mm, 1.2kV, 300A
SiC MOSFET Module
44 CGD15HB62P Rev -
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
Mechanical Drawing (units in Inches)
Full Gate Driver reference design available upon request
