BD434/BD436/BD438
PNP Silicon
Power Transistors
Features
• Intended for use in medium power near and switching applications
• With TO-126 package
• The complementary NPN type is BD433, BD435, BD437
Maximum Ratings
Symbol
Rating Rating Unit
VCEO Collector-Emitter Voltage BD434
BD436
BD438
-22
-32
-45
V
VCBO Collector-Base Voltage BD434
BD436
BD438
-22
-32
-45
V
VEBO Emitter-Base Voltage BD434
BD436
BD438 -5.0 V
IC Collector Current -4.0 A
PC Collector power dissipation 1.25 W
TJ Junction Temperature -55 to +150 ℃
TSTG Storage Temperature -55 to +150 ℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=-10mAdc, IB=0) BD434
BD436
BD438
-22
-32
-45
---
---
---
Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=-1mAdc, IE=0) BD434
BD436
BD438
-22
-32
-45
---
---
---
Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=-1mAdc, IC=0) -5 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=-22Vdc,IE=0) BD434
(VCB=-32Vdc,IE=0) BD436
(VCB=-45Vdc,IE=0) BD438
--- -100 uAdc
ICEO Collector-Base Cutoff Current
(VCE=-22Vdc,IE=0) BD434
(VCE=-32Vdc,IE=0) BD436
(VCE=-45Vdc,IE=0) BD438
--- -100 uAdc
IEBO Emitter-Base Cutoff Current
(VEB=-5.0Vdc, IC=0) --- -1.0 mAdc
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A
D
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PIN 1. EMITTER
PIN 2. COLLECTOR
1 2 3
PIN 3. BASE
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 1 2005/01/27
TM
Micro Commercial Components
ON CHARACTERISTICS
hFE-1
DC Current Gain
(IC=-500mAdc, VCE=-1.0Vdc) 85 --- ---
hFE-2
DC Current Gain
(IC=-10mAdc, VCE=-5.0Vdc) BD434/BD436
BD438
40
30
---
---
---
hFE-3
DC Current Gain
(IC=-2Adc, VCE=-1.0Vdc) BD434/BD436
BD438
50
40
---
---
----
VCE(sat) Collector-Emitter Saturation Voltage
(IC=-2.0Adc, IB=-0.2Adc) BD434/BD436
BD438
-0.5
-0.6
---
---
Vdc
VBE Base-Emitter Voltage
(VCE=-1.0Vdc,IC=-2.0Adc) BD434/BD436
BD438
-1.1
-1.2
---
---
Vdc
fT Transition Frequency
(IC=-250mAdc, VCE=-1.0Vdc) 3.0 --- MHz
www.mccsemi.com
Revision: 1 2005/01/27
MCC
BD434, BD436, BD438
TM
Micro Commercial Components