VTB Process Photodiodes VTB PROCESS BLUE ENHANCED, ULTRA HIGH DARK RESISTANCE FEATURES PRODUCT DESCRIPTION * Enhanced UV to IR spectral range * Integral IR rejection filters available * Response @ 220 nm, 0.06 A/W, typical with UV window * Response @ 365 nm, 0.14 A/W typical This series of P on N silicon planar photodiodes have been designed to maximize their response through the visible part of the spectrum. Those units with UV transmitting windows also exhibit excellent response in the UV region and are characterized at 220 nm. * High open circuit voltage @ low light levels * 1 to 2% linearity over 7 to 9 decades * Very low dark current & high shunt resistance "B" series devices have a built-in infrared rejection filter for those applications where a detector is needed that approximates the human eye. Typical transmission of wavelengths greater than 750 nm is less than 3% when measured with an incandescent source operating at 2850 K. Diodes made with the VTB process are primarily intended for use in the photovoltaic mode but may be used with a small reverse bias. All photodiodes in this series exhibit very high shunt resistance. This characteristic leads to very low offsets when the diodes are used in high gain transimpedance op-amp circuits. TYPICAL CHARACTERISTIC CURVES @ 25C (UNLESS OTHERWISE NOTED) Absolute Spectral Response Absolute Spectral Response "B" Series (Filtered) 13