Semiconductor Components Industries, LLC, 2004
November, 2004 − Rev. 6 1Publication Order Number:
NTD4302/D
NTD4302
Power MOSFET
68 A, 30 V, N−Channel DPAK
Features
•Ultra Low RDS(on)
•Higher Efficiency Extending Battery Life
•Logic Level Gate Drive
•Diode Exhibits High Speed, Soft Recovery
•Avalanche Energy Specified
•IDSS Specified at Elevated Temperature
•DPAK Mounting Information Provided
•Pb−Free Packages are Available
Applications
•DC−DC Converters
•Low Voltage Motor Control
•Power Management in Portable and Battery Powered Products:
i.e., Computers, Printers, Cellular and Cordless Telephones,
and PCMCIA Cards
N−Channel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENTS
T4302 = Device Code
Y = Year
WW = Work Week
CASE 369C
YWW
T
4302
4 Drain
3
Source
1
Gate 2
Drain
DPAK
(Surface Mount)
STYLE 2
CASE 369D
DPAK−3
−
(Straight Lead)
STYLE 2
123
4
4 Drain
1
Gate 2
Drain
3
Source
YWW
T
4302
4
123
30 V 7.8 m @ 10 V
RDS(on) TYP
68 A
ID MAXV(BR)DSS
See detailed ordering and shipping information in the
package dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
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NTD4302
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2
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 30 Vdc
Gate−to−Source Voltage − Continuous VGS ±20 Vdc
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25°C
Continuous Drain Current @ TC = 25°C (Note 4)
Continuous Drain Current @ TC = 100°C
RJC
PD
ID
ID
1.65
75
68
43
°C/W
W
A
A
Thermal Resistance − Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 3)
RJA
PD
ID
ID
IDM
67
1.87
11.3
7.1
36
°C/W
W
A
A
A
Thermal Resistance − Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 100°C
Pulsed Drain Current (Note 3)
RJA
PD
ID
ID
IDM
120
1.04
8.4
5.3
28
°C/W
W
A
A
A
Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 17 Apk, L = 5.0 mH, RG = 25 )EAS 722 mJ
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL260 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
4. Current Limited by Internal Lead Wires.
ORDERING INFORMATION
Device Package Type Package Shipping†
NTD4302 DPAK 369C 75 Units / Rail
NTD4302G DPAK 369C
(Pb−Free) 75 Units / Rail
NTD4302−001 DPAK−3 369D 75 Units / Rail
NTD4302T4 DPAK 369C 2500 Tape & Reel
NTD4302T4G DPAK 369C
(Pb−Free) 2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD4302
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3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 A)
Positive Temperature Coefficient
V(BR)DSS 30
−−
25 −
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 30 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 30 Vdc, TJ = 125°C)
IDSS −
−−
−1.0
10
Adc
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Negative Temperature Coefficient
VGS(th) 1.0
−1.9
−3.8 3.0
−
Vdc
Static Drain−Source On−State Resistance
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on) −
−
−
0.0078
0.0078
0.010
0.010
0.010
0.013
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) gFS − 20 − Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 24 Vd V 0Vd
Ciss − 2050 2400 pF
Output Capacitance (VDS = 24 Vdc, VGS = 0 Vdc,
f=10MHz)
Coss − 640 800
Reverse Transfer Capacitance
f
=
1
.
0
MH
z
)
Crss − 225 310
SWITCHING CHARACTERISTICS (Note 6)
T urn−On Delay Time td(on) −11 20 ns
Rise Time (VDD = 25 Vdc, ID = 1.0 Adc,
V10 Vdc
tr− 15 25
Turn−Off Delay Time VGS = 10 Vdc,
R
G
=
6
.
0
)
td(off) − 85 130
Fall Time
R
G =
6
.
0
)
tf− 55 90
T urn−On Delay Time td(on) −11 20 ns
Rise Time (VDD = 25 Vdc, ID = 1.0 Adc,
V10 Vdc
tr− 13 20
Turn−Off Delay Time VGS = 10 Vdc,
R
G
= 2.5
)
td(off) − 55 90
Fall Time
R
G =
2
.
5
)
tf− 40 75
T urn−On Delay Time td(on) − 15 − ns
Rise Time (VDD = 24 Vdc, ID = 20 Adc,
V10 Vdc
tr− 25 −
Turn−Off Delay Time VGS = 10 Vdc,
R
G
= 2.5
)
td(off) − 40 −
Fall Time
R
G =
2
.
5
)
tf− 58 −
Gate Charge
(V 24 Vd I 20Ad
QT− 55 80 nC
GaeC age
(VDS = 24 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Qgs (Q1) − 5.5 −
V
GS =
10
Vd
c
)
Qgd (Q2) − 15 −
BODY−DRAIN DIODE RATINGS (Note 5)
Diode Forward On−Voltage
(IS = 2.3 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD −
−
−
0.75
0.90
0.65
1.0
−
−
Vdc
Reverse Recovery Time
(I 23Ad V 0Vd
trr − 39 65 ns
e e se eco e y e
(IS = 2.3 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta− 20 −
s
dI
S
/dt
=
100
A/
s
)
tb− 19 −
Reverse Recovery Stored Charge Qrr − 0.043 − C
5. Indicates Pulse Test: Pulse Width = 300 sec max, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperature.
NTD4302
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4
1.6
1.4
1
1.2
0.8
0.6
10
1
100
1000
10000
40
20
50
10
30
0
60
0.005
0
30
21.51
ID, DRAIN CURRENT (AMPS)
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
0
0.1
0.075
0.05
0.025
4
026810
Figure 3. On−Resistance vs.
Gate−To−Source Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 4. On−Resistance vs. Drain Current
and Gate Voltage
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−To−Source Leakage
Current vs. Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (nA)
50
−50 100750−25 125 150
23 6
0.00E+00 1.00E+01
0
0.01
0.015
525201510 30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10
20
40
2.5 3
VGS = 0 V
TJ = 150°C
TJ = 100°C
ID = 18.5 A
VGS = 10 V
VGS = 4.5 V
VGS = 10 V
TJ = 25°C
ID = 10 A
TJ = 25°C
VDS > = 10 V
TJ = 25°C
TJ = −55°C
TJ = 100°C
VGS = 10 V
VGS = 7 V
VGS = 5 V
VGS = 4.6 V
VGS = 4 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
VGS = 4.4 V VGS = 3.8 V
VGS = 3.4 V
VGS = 3.2 V
VGS = 3.0 V
TJ = 25°C
5025
45
VGS = 2.8 V
0.5
2.00E+01 3.00E+01 4.00E+01 5.00E+01 6.00E+01
NTD4302
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5
VGS VDS
5
10
7.5
0
12.5
10
10
4000
20100
C, CAPACITANCE (pF)
0
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VGS, GATE−TO−SOURCE− VOLTAGE (V)
1
1000
100
10 10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
RG, GATE RESISTANCE ()
Figure 10. Diode Forward Voltage vs. Current
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
6000
010 60
0.5 0.90.80.70.6 1
15
5
0
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
2000
3000
5000
30
2.5 ID = 2 A
TJ = 25°C
Q2
Q1
VGS
QT
VDD = 24 V
ID = 18.5 A
VGS = 10 V
tr
td(off)
td(on)
tf
VGS = 0 V
TJ = 25°C
VGS = 0 V
VDS = 0 V TJ = 25°C
Crss
Ciss
Coss
Crss Ciss
20 30 40 50
1000
VD
15
25
20
0
30
10
VDS, DRAIN−TO−SOURCE− VOLTAGE (V)
NTD4302
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6
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
ID, DRAIN CURRENT (AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
dc
1
100
100
10
10 ms
1 ms
100 s
VGS = 10 V
SINGLE PULSE
TC = 25°C
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
Figure 12. Diode Reverse Recovery Waveform
RJA(t) = r(t) RJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RJA(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 13. Thermal Response − Various Duty Cycles
t, TIME (seconds)
Rthj
a
(t)
,
EFFECTIVE
TRANSIENT
THERMAL RESISTANCE
1000
1
D = 0.5
1E−05 1E−03 1E−02 1E−01
0.2
0.01
0.01
0.02
0.05
0.1
1E+00 1E+01 1E+03
SINGLE PULSE
1E−04 1E+02
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
DUTY CYCLE
100
10
0.1
NTD4302
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7
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
D
A
K
B
R
V
S
FL
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
−T− SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.22
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.180 BSC 4.58 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.102 0.114 2.60 2.89
L0.090 BSC 2.29 BSC
R0.180 0.215 4.57 5.45
S0.025 0.040 0.63 1.01
U0.020 −−− 0.51 −−−
V0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244 3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
NTD4302
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8
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
123
4
V
SA
K
−T−
SEATING
PLANE
R
B
F
GD3 PL
M
0.13 (0.005) T
C
E
JH
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.180 0.215 4.45 5.45
S0.025 0.040 0.63 1.01
V0.035 0.050 0.89 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z0.155 −−− 3.93 −−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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NTD4302/D
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