Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 3 1Publication Order Number:
BAS16HT1/D
BAS16HT1
Preferred Device
Switching Diode
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage VR75 Vdc
Peak Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD200
1.57
mW
mW/°C
Thermal Resistance Junction to Ambient RθJA 635 °C/W
Junction and Storage Temperature TJ, Tstg −55 to
150 °C
1. FR-4 Minimum Pad.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
IR
1.0
50
30
µAdc
Reverse Breakdown Voltage
(IBR = 100 µAdc) V(BR) 75 Vdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
715
855
1000
1250
mV
Diode Capacitance
(VR = 0, f = 1.0 MHz) CD 2.0 pF
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns) VFR 1.75 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 )trr 6.0 ns
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc,
RL = 500 )
QS 45 pC
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SOD−323
CASE 477
STYLE 1
MARKING DIAGRAM
Preferred devices are recommended choices for future use
and best overall value.
1
CATHODE 2
ANODE
A6 = Specific Device Code
M = Date Code
Device Package Shipping
ORDERING INFORMATION
BAS16HT1 SOD−323 3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
2
A6 M
BAS16HT1
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2
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820
0.1 µF
D.U.T.
VR
100 µH
0.1 µF
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
0.68
0
VR, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
CD, DIODE CAPACITANCE (pF)
2468
IF, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
TA = −40°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
IR, REVERSE CURRENT (µA)
BAS16HT1
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3
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F
DRAWING WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS OR GATE
BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A1.60 1.80 0.063 0.071
B1.15 1.35 0.045 0.053
C0.80 1.00 0.031 0.039
D0.25 0.40 0.010 0.016
E0.15 REF 0.006 REF
H0.00 0.10 0.000 0.004
J0.089 0.177 0.0035 0.0070
K2.30 2.70 0.091 0.106
NOTE 3
A
K
12
DB
E
H
C
JSTYLE 1:
PIN 1. CATHODE
2. ANODE
L0.075 −−− 0.003 −−−
NOTE 5
L
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.60
0.063
0.63
0.025 0.83
0.033
2.85
0.112
BAS16HT1
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4
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BAS16HT1/D
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