Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - (c) NXP N.V. (year). All rights reserved or (c) Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - (c) Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia 74LVC1G32-Q100 Single 2-input OR gate Rev. 2 -- 9 December 2016 Product data sheet 1. General description The 74LVC1G32-Q100 provides one 2-input OR function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V applications. Schmitt trigger action at all inputs makes the circuit tolerant of slower input rise and fall time. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications. 2. Features and benefits Automotive product qualification in accordance with AEC-Q100 (Grade 1) Specified from 40 C to +85 C and from 40 C to +125 C Wide supply voltage range from 1.65 V to 5.5 V High noise immunity Complies with JEDEC standard: JESD8-7 (1.65 V to 1.95 V) JESD8-5 (2.3 V to 2.7 V) JESD8-B/JESD36 (2.7 V to 3.6 V) ESD protection: MIL-STD-883, method 3015 exceeds 2000 V HBM JESD22-A114F exceeds 2000 V MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 ) 24 mA output drive (VCC = 3.0 V) CMOS low power consumption Latch-up performance exceeds 250 mA Direct interface with TTL levels Inputs accept voltages up to 5 V 74LVC1G32-Q100 NXP Semiconductors Single 2-input OR gate 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version 74LVC1G32GW-Q100 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 74LVC1G32GV-Q100 40 C to +125 C SC-74A plastic surface-mounted package; 5 leads SOT753 4. Marking Table 2. Marking Type number Marking code[1] 74LVC1G32GW-Q100 VG 74LVC1G32GV-Q100 V32 [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 5. Functional diagram % % $ < < $ Fig 1. Logic symbol PQD PQD PQD Fig 2. IEC logic symbol Fig 3. Logic diagram 6. Pinning information 6.1 Pinning /9&*4 % $ *1' 9&& < DDD Fig 4. Pin configuration SOT353-1 and SOT753 74LVC1G32_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 9 December 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 2 of 13 74LVC1G32-Q100 NXP Semiconductors Single 2-input OR gate 6.2 Pin description Table 3. Pin description Symbol Pin Description B 1 data input A 2 data input GND 3 ground (0 V) Y 4 data output VCC 5 supply voltage 7. Functional description Table 4. Function table[1] Input Output A B L L L L H H H L H H H H [1] Y H = HIGH voltage level; L = LOW voltage level 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage IIK input clamping current Conditions Min Max Unit 0.5 +6.5 V 50 - [1] 0.5 +6.5 VI < 0 V mA VI input voltage IOK output clamping current VO > VCC or VO < 0 V - 50 VO output voltage Active mode [1][2] 0.5 VCC + 0.5 V Power-down mode [1][2] 0.5 +6.5 V - 50 mA VO = 0 V to VCC V mA IO output current ICC supply current - 100 mA IGND ground current 100 - mA Ptot total power dissipation - 250 mW Tstg storage temperature 65 +150 C Tamb = 40 C to +125 C [3] [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation. [3] For TSSOP5 and SC-74A packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K. 74LVC1G32_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 9 December 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 3 of 13 74LVC1G32-Q100 NXP Semiconductors Single 2-input OR gate 9. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter Conditions VCC supply voltage VI input voltage VO output voltage Min Typ Max Unit 1.65 - 5.5 V 0 - 5.5 V Active mode 0 - VCC V VCC = 0 V; Power-down mode 0 - 5.5 V 40 - +125 C - - 20 ns/V - - 10 ns/V Tamb ambient temperature t/V input transition rise and fall rate VCC = 1.65 V to 2.7 V VCC = 2.7 V to 5.5 V 10. Static characteristics Table 7. Static characteristics At recommended operating conditions. Voltages are referenced to GND (ground = 0 V). Symbol Parameter VIH VIL VOH VOL HIGH-level input voltage LOW-level input voltage 40 C to +85 C Conditions Max Min Max 0.65 VCC - - 0.65 VCC - V VCC = 2.3 V to 2.7 V 1.7 - - 1.7 - V VCC = 2.7 V to 3.6 V 2.0 - - 2.0 - V VCC = 4.5 V to 5.5 V 0.7 VCC - - 0.7 VCC - V VCC = 1.65 V to 1.95 V - - 0.35 VCC - VCC = 1.65 V to 1.95 V 0.35 VCC V VCC = 2.3 V to 2.7 V - - 0.7 - 0.7 V VCC = 2.7 V to 3.6 V - - 0.8 - 0.8 V VCC = 4.5 V to 5.5 V - - 0.3 VCC - 0.3 VCC V VCC 0.1 - - VCC 0.1 - V IO = 4 mA; VCC = 1.65 V 1.2 - - 0.95 - V IO = 8 mA; VCC = 2.3 V 1.9 - - 1.7 - V IO = 12 mA; VCC = 2.7 V 2.2 - - 1.9 - V IO = 24 mA; VCC = 3.0 V 2.3 - - 2.0 - V IO = 32 mA; VCC = 4.5 V 3.8 - - 3.4 - V - - 0.10 - 0.10 V IO = 4 mA; VCC = 1.65 V - - 0.45 - 0.70 V IO = 8 mA; VCC = 2.3 V - - 0.30 - 0.45 V LOW-level VI = VIH or VIL output voltage IO = 100 A; VCC = 1.65 V to 5.5 V Product data sheet Unit Min HIGH-level VI = VIH or VIL output voltage IO = 100 A; VCC = 1.65 V to 5.5 V 74LVC1G32_Q100 40 C to +125 C Typ[1] IO = 12 mA; VCC = 2.7 V - - 0.40 - 0.60 V IO = 24 mA; VCC = 3.0 V - - 0.55 - 0.80 V IO = 32 mA; VCC = 4.5 V - - 0.55 - 0.80 V All information provided in this document is subject to legal disclaimers. Rev. 2 -- 9 December 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 4 of 13 74LVC1G32-Q100 NXP Semiconductors Single 2-input OR gate Table 7. Static characteristics ...continued At recommended operating conditions. Voltages are referenced to GND (ground = 0 V). Symbol Parameter 40 C to +85 C Conditions 40 C to +125 C Min Typ[1] Max Min Max Unit II input leakage current VI = 5.5 V or GND; VCC = 0 V to 5.5 V - 0.1 1 - 1 A IOFF power-off leakage current VCC = 0 V; VI or VO = 5.5 V - 0.1 2 - 2 A ICC supply current VI = 5.5 V or GND; IO = 0 A; VCC = 1.65 V to 5.5 V - 0.1 4 - 4 A ICC additional per pin; VCC = 2.3 V to 5.5 V; supply current VI = VCC 0.6 V; IO = 0 A - 5 500 - 500 A CI input capacitance - 5 - - - pF [1] VCC = 3.3 V; VI = GND to VCC All typical values are measured at VCC = 3.3 V and Tamb = 25 C. 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6. Symbol Parameter propagation delay tpd power dissipation capacitance CPD 40 C to +85 C Conditions 40 C to +125 C Unit Min Typ[1] Max Min Max VCC = 1.65 V to 1.95 V 1.0 3.1 8.0 1.0 10.5 ns VCC = 2.3 V to 2.7 V 0.5 2.1 5.5 0.5 7.0 ns VCC = 2.7 V 0.5 2.5 5.5 0.5 7.0 ns VCC = 3.0 V to 3.6 V 0.5 2.1 4.5 0.5 6.0 ns VCC = 4.5 V to 5.5 V 0.5 1.7 4.0 0.5 5.5 ns - 16 - - - pF A, B to Y; see Figure 5 VI = GND to VCC; VCC = 3.3 V [2] [3] [1] Typical values are measured at Tamb = 25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively. [2] tpd is the same as tPLH and tPHL. [3] CPD is used to determine the dynamic power dissipation (PD in W). PD = (CPD VCC2 fi N) + (CL VCC2 fo) where: VCC = supply voltage in V, fi = input frequency in MHz, N = number of inputs switching, CL = output load capacitance in pF, fo = output frequency in MHz. 74LVC1G32_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 9 December 2016 (c) NXP Semiconductors N.V. 2016. All rights reserved. 5 of 13 74LVC1G32-Q100 NXP Semiconductors Single 2-input OR gate 12. AC waveforms 9, 90 $%LQSXW *1' W 3+/ W 3/+ 92+ 90