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NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100 µA to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. Sourced from Process 42.
MPSH10 MMBTH10
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Colle ctor-Emit t er Voltage 25 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 3.0 V
ICCollector Current - Continuous 50 mA
TJ, Tstg Operating and Stora ge Junction Tempe rature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T A = 25°C unless otherwise noted
CEBTO-92
C
B
E
SOT-23
Mark: 3E
Symbol Characteristic Max Units
MPSH10 *MMBTH10
PDTotal Device Dissipatio n
Derate above 25°C350
2.8 225
1.8 mW
mW/°C
RθJC Thermal Resista nce, Junction to Case 125 °C/W
RθJA Thermal Re sistance, Junction to Ambient 357 556 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
MPSH10 / MMBTH10
3
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 25 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100
µ
A, IE = 0 30 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10
µ
A, IC = 0 3.0 V
ICBO Collector Cutoff Current VCB = 25 V, IE = 0 100 nA
IEBO Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 nA
ON CHARACTERISTICS
hFE DC Current Gain IC = 4.0 mA, VCE = 10 V 60
VCE(sat)Collector-Emitter Saturation Volta ge IC = 4.0 mA, IB = 0.4 mA 0.5 V
VBE(on)Base-Emitter On Voltage IC = 4.0 mA, VCE = 10 V 0.95 V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Ba ndwidth Product IC = 4.0 mA, VCE = 10 V,
f = 100 MHz 650 MHz
Ccb Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.7 pF
Crb Common-Base Feedback Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.35 0.65 pF
rb’CcCollector Base Time Constant IC = 4.0 mA, VCB = 10 V,
f = 31.8 MHz 9.0 pS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n
Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)
NPN RF Transistor
(continued)
MPSH10 / MMBTH10
Typical Characteristics
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
Typ ica l Pulsed Cu rren t Gai n
vs Colle ctor Current
0.1 0.2 0.5 1 2 5 10 20 50
0
20
40
60
80
100
I - COLLECTOR CURRENT ( mA)
h - T YPICAL PULSED CUR RENT GAIN
C
FE
125 °C
25 °C
- 4 0 ° C
V = 5V
CE
Co l lec to r-Em itt er Satu r atio n
Voltage vs Collector Curren t
0.1 1 10 20
0.05
0.1
0.15
0.2
I - COLL E CTO R CU RRENT (m A)
V - CO LLECTOR-EMITTER VOLTAGE ( V)
CESAT
25 °C
C
β= 10
125 °C
- 40 °C
B ase- Emi tter Sa turation
Voltag e vs Coll ector Curren t
0.1 1 10 20
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
I - COLLECTOR CURR ENT ( mA)
V - BASE-EMI TTER VOLTA GE (V)
BESAT
C
β= 1 0
25 °C
125 °C
- 40 °C
Base-Emitter ON Voltag e v s
Collector Current
0.01 0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE- EMITTER ON V OLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
Collector-Cutoff Current
vs Ambi ent Temperature
25 50 75 100 125 150
0.1
1
10
T - AM BIENT TEMP ERATU RE ( C)
I - CO LL E CTOR CURRENT (nA)
A
V = 30V
CB
CBO
°
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
3
Common Base Y Parameters vs. Frequency
Input Admittance
100 200 500 1000
-120
-80
-40
0
40
80
120
f - FREQUENCY (MHz)
Y - INPUT ADMITTANCE (mmhos)
ib
V = 1 0V
CE
I = 5 mA
C
gib
bib
Output Admittance
100 200 500 1000
0
2
4
6
8
10
12
f - FREQUENCY (MHz)
Y - OUTPUT ADMITTANCE (mmhos)
ob
V = 10V
CE
I = 5 mA
C
gob
bob
Forward Transfer Admittance
100 200 500 1000
-120
-80
-40
0
40
80
120
f - FREQ U EN CY (MH z)
Y - FORWARD ADMITTANCE (mmhos)
fb
V = 10V
CE
I = 5 mA
C
gfb
bfb
Reverse Transfer Admi ttance
100 200 500 1000
0
2
4
6
8
f - FREQUENCY (MHz)
Y - REVERSE ADMITTANCE (mmhos)
rb
V = 10V
CE
I = 5 mA
C
-grb
-b rb
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
Common Emitter Y Parameters vs. Frequency
Input Admittance
100 200 500 1000
0
4
8
12
16
20
24
f - FREQUENCY (MHz)
Y - INPUT ADMITTANCE (mmhos)
ie
V = 10V
CE
I = 2 mA
C gie
bie
Output Admittance
100 200 500 1000
0
1
2
3
4
5
6
f - FREQUENCY (MHz)
Y - OUTPUT ADMITTANCE (mmhos)
oe
V = 10V
CE
I = 2 mA
C
goe
boe
Forward Transfer Admittance
100 200 500 1000
-60
-40
-20
0
20
40
60
f - FREQUENCY (MHz)
Y - FORWARD ADMITTANCE (mmhos)
fe
V = 10V
CE
I = 2 mA
C
gfe
bfe
Reverse Transfer Admittance
100 200 500 1000
0
0.2
0.4
0.6
0.8
1
1.2
f - FREQUENCY (MHz)
Y - REVERSE ADMITTANCE (mmhos)
re
V = 10V
CE
I = 2 mA
C
-gre
-b re
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
3
Test Circuits
0.8-10 pF
1000 pF
2.0 pF
1000 pF
100 pF
0.8-10 pF
5.0-18 pF 1000 pF
1000 pF
1000 pF
2.0 KΩΩ
ΩΩ
Ω10 KΩΩ
ΩΩ
Ω
680 ΩΩ
ΩΩ
Ω
T1
Input
50 ΩΩ
ΩΩ
Ω
L1
L2
TUM
VCC = 12 V
L1 - L3 turns No. 16 wire, 1/2 inch L x 1/4 inch ID
tapped 1 1/2 turns from cold side
L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID
tapped 1 1/2 turns from cold side
T1 - Pri. 1 turn No. 16 wire
Sec. 1 turn No. 18 wire
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
1000 pF
1000 pF
(NOTE 2) 175 pF
50 pF
2.2 KΩΩ
ΩΩ
Ω
- Vee
RFC (NOTE 1)
RFC
500 mHz Output
into 50ΩΩ
ΩΩ
Ω
VCC
NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long
NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long
FIGURE 1: Neutralized 200 MHz PG and NF Circuit
FIGURE 2: 500 MHz Oscillator Circuit
VBB
TO-92 Tape and Reel Data
March 2001, Rev. B1
©2001 Fairchild Semiconductor Corporation
TO-92 Packaging
Configuration: Figure 1.0
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
2000 units per
EO70 box for
std option
FSCINT Label
530mm x 130m m x
83mm
Inter med iate box
10,000 units maximum
per
intermediate box
for std option
FSCINT Label
114mm x 102m m x 51mm
Immed iate Box
Anti-static
Bubble Sheets
(TO-92) BULK PACKING INFORMATION
EOL
CODE DESCRIPTION LEADCLIP
DIMENSION QUANTITY
J18Z TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX
J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX
NO EOL
CODE TO-92 STANDARD
STRAIGHT FOR: PKG 92, NO LEADCLIP 2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
375mm x 267m m x 375mm
Inter med iate Box
FSCINT
Label
Customized
Label
333mm x 231m m x 183mm
Inter med iate Box
FSCINT
Label
Customized
Label
TO-92 TNR/AMMO PACKING INFROMATION
Packing Style Quan tity EOL cod e
Reel A 2,000 D26Z
E2,000 D27Z
Ammo M 2,000 D74Z
P2,000 D75Z
U nit weight = 0 .2 2 gm
Reel weight with componen ts = 1.04 kg
Ammo weight with components = 1 .0 2 kg
Max quantity per interme d iate b ox = 10,000 units
F63TNR
Label
5 Ammo boxes per
Inter med iate Box
Customized
Label
327mm x 158m m x 135mm
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LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
D9842
SP EC REV:
B2
SPEC:
QTY:
10000
QA REV:
FAIRCHILD SEMICONDUCTOR CORPORATI ON
HTB:B
(FSCINT)
F63TNR
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Customized
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5 Reels per
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TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
LOT: CBVK74 1B019
FS ID: PN 2 22N
D/C1: D9842 QTY1: SPEC REV:
SPEC:
QTY: 2000
D/C2: QTY2: CPN: N/F: F (F6 3TNR) 3
F63TNR Label sample
FSCINT Label sample
C
5 EO70 boxes per
intermediate Box
ustomized
Label
94 (NON PROELECTRON
SERIES), 96
L34Z TO-92 STANDARD
STRAIGHT FOR: PKG 94 NO LEADCLIP 2.0 K / BOX
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
TO-92 Tape and Reel Data, continued
September 1999, Rev. B
TO-92 Reeling Style
Configuration: Figure 2.0
Style “A”, D26Z, D70 Z (s/h)
Machine Op tion “A” (H)
Style “E ”, D2 7Z, D 71Z (s/ h)
Machine O ption “E” (J)
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
TO-92 Radial Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
ITEM DESCRIPTION
Base of Package to Lead Bend
Com p on en t Heig ht
Lead Clinc h Height
Com p on en t Ba s e He ig ht
Com p on en t Al ig nm e nt ( sid e/s id e )
Com p on en t Al ig nm e nt ( front/bac k )
Com p on en t Pitc h
Feed Hole Pitch
Hole C enter to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
Cut Lead Length
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thick ness
Carrier Tape Width
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spring O ut
SYMBOL
b
Ha
HO
H1
Pd
Hd
P
PO
P1
P2
F1/F2
d
L
L1
t
t1
W
WO
W1
W2
DO
S
DIMENSION
0. 09 8 (m ax )
0. 92 8 (+ /- 0.025)
0. 63 0 (+ /- 0.020)
0. 74 8 (+ /- 0.020)
0. 04 0 (m ax )
0. 03 1 (m ax )
0. 50 0 (+ /- 0.020)
0. 50 0 (+ /- 0.008)
0. 15 0 (+ 0 .00 9, -0 . 0 10 )
0. 24 7 (+ /- 0.007)
0. 10 4 (+ /- 0 . 01 0)
0. 01 8 (+ 0 .00 2, -0 . 0 03 )
0. 42 9 (m ax )
0. 20 9 (+ 0 .05 1, -0 . 0 52 )
0. 03 2 (+ /- 0.006)
0. 02 1 (+ /- 0.006)
0. 70 8 (+ 0 .02 0, -0 . 0 19 )
0. 23 6 (+ /- 0.012)
0. 03 5 (m ax )
0. 36 0 (+ /- 0.025)
0. 15 7 (+ 0 .00 8, -0 . 0 07 )
0. 00 4 (m ax )
Note : A ll dimensio ns ar e in inches.
ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM
Ree l Di am e ter D1 13. 9 75 14.02 5
Arb or Hol e Di am et er (S ta nd ard) D2 1. 16 0 1.200
(Small Hole) D2 0.650 0.700
Core Diameter D3 3.100 3.300
Hub Reces s Inner Diameter D4 2.700 3.100
Hub Recess Depth W1 0.370 0. 570
Flange to Flange In ner Width W2 1.630 1.690
Hub to H ub Center Width W3 2.090
Note: All dimensions are inches
TO-92 Tape and Reel Taping
Dimension Configuration: Figure 4.0
Ha
H1 HO
PO
P2
P1 F1
DO
P Pd
b
d
L1
LS
WO W2
W
t
t1
Hd
W1
TO-92 Reel
Configuration: Figure 5.0
User D ire c tion of Feed
SENS ITIVE DEVICES
ELECTROSTATIC
D1
D3
Customi zed Label
W2
W1 W3
F63 TNR Label
D4
D2
TO-92 Tape and Reel Data, continued
July 1999, Rev. A
TO-92 (FS PKG Code 92, 94, 96)
TO-92 Package Dimensions
January 2000, Rev. B
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1977
©2000 Fairchild Semiconductor International
SOT-23 Packagin g
Confi gurat ion: Figure 1.0
Components Leader Tape
500mm minimum or
125 emp ty pocket s
Tr ailer Tape
300mm minimum or
75 empty pockets
SOT-23 Tape Leader and Trailer
Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
SOT-23 Packaging Information
Standard
(no flow code) D87Z
Packaging type
Reel Si ze
TNR
7" Dia
TNR
13"
Qty per Reel/Tube/Bag 3,000 10,000
Bo x Dimen s i on (mm ) 187x107x183 343x343x64
Max qt y per B o x 24,000 30,000
Weight per unit (gm) 0.0082 0.0082
Weight per Reel (kg) 0.1175 0.4006
Human readable
Label
Human Readable Label
Human Readable Label sample
343mm x 342mm x 64mm
Intermediate box for L87Z Option
187mm x 107mm x 183mm
Intermediate Box for Standard Option
SOT-23 Unit Orientation
3P 3P 3P 3P
Human Readable
Label
Customized Label
Embossed
Carrier Tape
Antistatic Cover Tape
Packaging Description:
SOT-23
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (H eat Acti vated
Adhesive in nature) primaril y composed of polyester film ,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 uni ts per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm diameter r eel. Thi s and some other opti ons are
described in the Packaging Information table.
These full reel s are individually labeled and pl aced insi de
a standard intermediate made of recyclable corrugated
brown paper w i th a Fai r child l ogo pri nt i ng. One pizza box
contains eight reels maximum. And these intermediate
boxes are placed inside a labeled shipping box which
comes i n dif f erent sizes depending on the number of part s
shipped.
parts are shipped in tape. The carrier tape is
SOT-23 Tape and Reel Data
September 1999, Rev . C
©2000 Fairchild Semiconductor International
Dimensions are in millimeter
Pkg type
A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
SOT-23
(8mm)
3.15
+/-0.10 2.77
+/-0.10 8.0
+/-0.3 1.55
+/-0.05 1.125
+/-0.125 1.75
+/-0.10 6.25
min 3.50
+/-0.05 4.0
+/-0.1 4.0
+/-0.1 1.30
+/-0.10 0.228
+/-0.013 5.2
+/-0.3 0.06
+/-0.02
Dimensions are in inches and millimeters
Tape Size Reel
Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
8mm 7" Dia 7.00
177.8 0.059
1.5 512 +0.020/-0.008
13 +0.5/-0.2 0.795
20.2 2.165
55 0.331 +0.059/-0.000
8.4 +1.5/0 0.567
14.4 0.311 – 0.429
7.9 – 1 0.9
8m m 13" D ia 13.00
330 0.059
1.5 512 +0.020/-0.008
13 +0.5/-0.2 0.795
20.2 4.00
100 0.331 +0.059/-0.000
8.4 +1.5/0 0.567
14.4 0.311 – 0.429
7.9 – 1 0.9
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Option
Dim A
Max
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maxim um
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
SOT-23 Embossed Carrier Tape
Configuration: Figure 3.0
SOT-23 Reel Configuration: Figure 4.0
P1 A0
D1
FW
E1
E2
Tc
Wc
K0
T
B0
D0P0 P2
SOT-23 Tape and Reel Data, continued
September 1999, Rev . C
SOT-23 (FS PKG Code 49)
SOT-23 Package Dimensions
September 1998, Rev . A1
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Par t Weight per unit (gram): 0.0082
©2000 Fairchild Semiconductor International
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PACMAN™
POP™
Rev . G
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
F ACT Quiet Series™
FAST
SyncFET™
TinyLogic™
UHC™
VCX™
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