RS1DFS - RS1MFS Taiwan Semiconductor 1A, 200V - 1000V Surface Mount Fast Recovery Rectifier FEATURES KEY PARAMETERS Glass passivated junction chip Ideal for automated placement Low profile package Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS High frequency rectification PARAMETER VALUE UNIT IF(AV) 1 A VRRM 200 - 1000 V IFSM 30 A TJ MAX 150 C Package SOD-128 Configuration Single die Freewheeling application Switching mode converters and inverters in computer,automotive and telecommunication MECHANICAL DATA Case: SOD-128 Molding compound meets UL 94V-0 flammability rating Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.027 g (approximately) SOD-128 ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) PARAMETER SYMBOL Marking code on the device RS1DFS RS1GFS RS1JFS RS1KFS RS1MFS UNIT RS1DFS RS1GFS RS1JFS RS1KFS RS1MFS Repetitive peak reverse voltage VRRM 200 400 600 800 1000 V Reverse voltage, total rms value VR(RMS) 140 280 420 560 700 V Forward current Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode Junction temperature IF(AV) 1 A IFSM 30 A TJ - 55 to +150 C Storage temperature TSTG - 55 to +150 C 1 Version:B1907 RS1DFS - RS1MFS Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance per diode RJL 29 C/W Junction-to-ambient thermal resistance per diode RJA 84 C/W Junction-to-case thermal resistance per diode RJC 30 C/W Thermal Performance Note: Units mounted on recommended PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) PARAMETER CONDITIONS SYMBOL IF = 0.5A, TJ = 25C Forward voltage per diode IF = 1.0A, TJ = 25C (1) IF = 0.5A, TJ = 125C VF IF = 1.0A, TJ = 125C Reverse current @ rated VR per diode TJ = 25C (2) IR TJ = 125C Junction capacitance 1 MHz, VR=4.0V CJ RS1DFS RS1GFS Reverse recovery time IF=0.5A ,IR=1.0A RS1JFS IRR=0.25A RS1KFS trr RS1MFS TYP MAX UNIT 0.94 1.10 1.01 1.30 0.79 1.00 0.88 1.20 - 5 A - 50 A 7 - pF - 150 ns - 250 ns - 500 ns V Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PART NO. SUFFIX(*) RS1xFS (Note 1, 2) H PACKING PACKING CODE CODE SUFFIX MW G MX PACKAGE PACKING SOD-128 3,500 / 7" Plastic reel SOD-128 14,000 / 13" Plastic reel Notes: 1. "xx" defines voltage from 200V (RS1DFS) to 1000V (RS1MFS) 2. Whole series with green compound (halogen-free) *: Optional available EXAMPLE P/N EXAMPLE P/N PART NO. RS1DFSHMWG RS1DFS PART NO. PACKING PACKING CODE SUFFIX CODE SUFFIX H MW G 2 DESCRIPTION AEC-Q101 qualified Green compound Version:B1907 RS1DFS - RS1MFS Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 CAPACITANCE (pF) A AVERAGE FORWARD CURRENT (A) 1.5 1 0.5 10 1 Heat sink 5mm x 5mm Cu pad test board f=1.0MHz Vsig=50mVp-p 0 0.1 25 50 75 100 125 150 1 10 LEAD TEMPERATURE ( C) Fig.4 Typical Forward Characteristics TJ=125C 0.1 0.01 TJ=25C 0.001 10 20 30 40 50 60 70 80 90 100 10 10 TJ=125C TJ=125C 1 TJ=25C 0.1 TJ=25C 0.01 Pulse width 0.001 0.3 0.1 0.6 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) UF1DLW 1 (A) 10 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (A) Fig.3 Typical Reverse Characteristics 1 100 REVERSE VOLTAGE (V) 0.7 0.4 0.8 0.5 0.9 0.6 1 0.7 1.1 Pulse width 300s duty cycle 0.81% 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 FORWARD VOLTAGE (V) 3 Version:B1907 1.2 RS1DFS - RS1MFS Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS SOD-128 DIM Unit (mm) Unit (inch) Min Max Min Max A 3.60 4.00 0.142 0.157 B 2.30 2.70 0.091 0.106 C 1.60 1.90 0.063 0.075 D 0.90 1.10 0.035 0.043 E 0.10 0.22 0.004 0.009 F 0.00 0.10 0.000 0.004 G 0.30 0.60 0.012 0.024 H 0.40 0.80 0.016 0.031 I 4.40 5.00 0.173 0.197 SUGGESTED PAD LAYOUT DIM Unit (mm) Unit (inch) A 1.40 0.055 B 3.00 0.118 C 2.10 0.082 D 4.40 0.173 MARKING DIAGRAM 4 P/N = Marking Code YW = Date Code F = Factory Code Version:B1907 RS1DFS - RS1MFS Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version:B1907