TRANSYS FLECTRONIES LIMITED Designed for Complementary Use with the TIP30 Series 30 W at 25C Case Temperature 1 A Continuous Collector Current 3 A Peak Collector Current Customer-Specified Selections Available absolute maximum ratings TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS TO-220 PACKAGE (TOP VIEW) O Pin 2 is in electrical contact with the mounting base. at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIP29 80 Collector-base voltage (Ip = 0) TIP29A Vecso 100 Vv TIP29B 120 TIP29C 140 TIP29 40 Collector-emitter voltage (lp = 0) TIP29A VcEo 60 Vv TIP29B 80 TIP29C 100 Emitter-base voltage VEBo 5 Vv Continuous collector current lo 1 A Peak collector current (see Note 1) lom 3 A Continuous base current lB 0.4 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Prot 30 WwW Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Prot 2 WwW Unclamped inductive load energy (see Note 4) VYoLIo? 32 mJ Operating junction temperature range Tj -65 to +150 C Storage temperature range Tstg -65 to +150 C Lead temperature 3.2 mm from case for 10 seconds TL 250 C NOTES: 1. This value applies for t, < 0.3 ms, duty cycle < 10%. 2. Derate linearly to 150C case temperature at the rate of 0.24 W/C. 3. Derate linearly to 150C free air temperature at the rate of 16 MW/C. 4. VBE(ott) =0, Rs = 0.1 Q, Voc =20V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 MH, Ipon) = 0.4 A, Rape = 100 Q, Power p INNOVATIONSTIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN | TYP | MAX | UNIT TIP29 40 Vv Collector-emitter [= 30mA le =0 TIP29A 60 Vv (BR)CEO breakdown voltage om Be TIP29B 80 (see Note 5) TIP29C 100 Voce = 80 V Vee = 0 TIP29 0.2 | Collector-emitter Voge = 100 V Veg = 0 TIP29A 0.2 mA CES cut-off current Vog = 120 V Veg = 0 TIP29B 0.2 Voge = 140 V Veg =0 TIP29C 0.2 Collector cut-off Vcg= 30V lp =O TIP29/29A 0.3 IcEo mA current Vcg= 60V lp =O TIP29B/29C 0.3 | Emitter cut-off Vea= 5V | 0 : mA FBO current EB~ a Forward current Vep= 4V Ic =O0.2A 40 Nee . (see Notes 5 and 6) transfer ratio Vep= 4V Ilc= 1A 15 75 v Collectoremitter Ip= 125 mA Ip= 1A (see Notes 5 and 6) 07] v CE(sat) saturation voltage Be ce Vee soemnitter Voe= 4V Ip= 1A (see Notes 5 and 6) 13 |v BE voltage cee ce Small signal forward Ne . Vege = 10V Ic =O0.2A f= 1 kHz 20 current transfer ratio Small signal forward [Niel . Vege = 10V Ic =O0.2A f= 1 MHz 3 current transfer ratio NOTES: 5. These parameters must be measured using pulse techniques, t, = 300 us, duty cycle < 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN | TYP | MAX | UNIT Rec Junction to case thermal resistance 4.17 C/W Roya Junction to free air thermal resistance 62.5 C/W resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS t MIN | TYP | MAX | UNIT ton Turn-on time lo =1A IByon) =0.1A IBvoft) =-0.1A 0.5 Us tott Turn-off time VeE(otty = 4.3 V R_ = 302 tp = 20 us, de < 2% 2 Us t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS - DC Current Gain Neg TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE VS VS COLLECTOR CURRENT BASE CURRENT 1000 10 Vop =4V I, = 100 mA Tg = 25C 7 |, = 300 mA t, = 300 us, duty cycle < 2% & Il=1A 6 > 100 = 1-0 5 o g WW 10 & 0-1 2 9 oO se 1 0-01 0-001 0-01 0-1 1-0 0-1 1-0 10 100 1000 I, - Collector Current - A |, - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE VS COLLECTOR CURRENT 1-0 Vor 4V Ty = 25C > 0-9 8, y s Y > 0-8 5 Y 2 Y & A & 0-7 A 8 a 1 LA LF > aA 0-6 0-5 0-01 0-1 1-0 |, - Collector Current - A Figure 3.TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 t, = 300 us, d=0.1 = 10% t,= 1ms,d=0.1 = 10% t, = 10 ms, d= 0.1 = 10% 10 DC Operation < 6 Ss 10 3 9 oO - 0-1 TIP29 TIP29A TIP29B TIP29C 0-01 1-0 10 100 1000 Vog - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION VS CASE TEMPERATURE 40 = 6 30 & A N i \ 5 20 N E N\ E 3 \ = 10 N a N\ NX 0 0 25 50 75 100 125 150 T, - Case Temperature - C Figure 5.TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. T0220 470 4,20 3,96 < > 1,32 9371 2,95 123 L 2,54 see Note B 6,6 __. CD 4 60 15,90 14,55 see Note C _ 64 3,5 a ph ____ v Kl 14,1 1,70 12,7 0,97 1,07 0,61 @) @) @) i u 2,74 0,64 2,34 0,41 5,28 2,90 4,88 2,40 VERSION 1 : VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm.