IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
OptiMOS®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C 67 A
TC=100 °C 48
Pulsed drain current2) ID,pulse TC=25 °C 268
Avalanche energy, single pulse EAS ID=67 A, RGS=25 Ω154 mJ
Reverse diode dv/dtdv/dt
ID=67 A, VDS=80 V,
di/dt=100 A/µs,
Tj,max=175 °C
6 kV/µs
Gate source voltage3) VGS ±20 V
Power dissipation Ptot TC=25 °C 125 W
Operating and storage temperature Tj, Tstg -55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
3
)
Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Value
1)J-STD20 and JESD22
2) see figure 3
VDS 100 V
RDS(on),max (TO252) 12.4 mΩ
ID67 A
Product Summary
Type IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G
Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3
Marking 12CN10N 12CN10N 12CN10N 12CN10N
Rev. 1.02 page 1 2006-06-02
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 1.2 K/W
RthJA minimal footprint - - 62
6 cm2 cooling area4) --40
minimal footprint - - 75
6 cm2 cooling area4) --50
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 100 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=83 µA 234
Zero gate voltage drain current IDSS
VDS=80 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=80 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance RDS(on)
VGS=10 V, ID=67 A,
(TO252) - 9.3 12.4 mΩ
VGS=10 V, ID=67 A,
(TO263) - 9.5 12.6
VGS=10 V, ID=67 A,
(TO220, TO262) - 9.8 12.9
Gate resistance RG- 1.5 - Ω
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=67 A 39 77 - S
Values
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Thermal resistance, junction -
ambient (TO220, TO262, TO263)
Thermal resistance, junction -
ambient (TO252)
Rev. 1.02 page 2 2006-06-02
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
Input capacitance Ciss - 3250 4320 pF
Output capacitance Coss - 489 650
Reverse transfer capacitance Crss -2944
Turn-on delay time td(on) -1726ns
Rise time tr-2132
Turn-off delay time td(off) -3248
Fall time tf-812
Gate Char
g
e Characteristics5)
Gate to source charge Qgs -1824nC
Gate to drain charge Qgd -1218
Switching charge Qsw -2029
Gate charge total Qg-4965
Gate plateau voltage Vplateau - 5.5 - V
Output charge Qoss VDD=50 V, VGS=0 V -5269nC
Reverse Diode
Diode continous forward current IS- - 67 A
Diode pulse current IS,pulse - - 268
Diode forward voltage VSD
VGS=0 V, IF=67 A,
Tj=25 °C - 1 1.2 V
Reverse recovery time trr - 105 ns
Reverse recovery charge Qrr - 255 - nC
5) See figure 16 for gate charge parameter definition
VR=50 V, IF=IS,
diF/dt=100 A/µs
TC=25 °C
Values
VGS=0 V, VDS=50 V,
f=1 MHz
VDD=50 V, VGS=10 V,
ID=33.5 A, RG=1.6 Ω
VDD=50 V, ID=67 A,
VGS=0 to 10 V
Rev. 1.02 page 3 2006-06-02
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
101
100
10-1
10-2
tp [s]
ZthJC [K/W]
0
20
40
60
80
100
120
140
0 50 100 150 200
TC [°C]
Ptot [W]
0
10
20
30
40
50
60
70
0 50 100 150 200
TC [°C]
ID [A]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
103
102
101
100
10-1
103
102
101
100
10-1
VDS [V]
ID [A]
Rev. 1.02 page 4 2006-06-02
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
4.5 V 5 V
5.5 V
6 V
10 V
0
5
10
15
20
25
30
0 20406080
ID [A]
RDS(on) [mΩ]
25 °C
175 °C
0
50
100
150
200
250
02468
VGS [V]
ID [A]
0
20
40
60
80
100
0 20406080
ID [A]
gfs [S]
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V
8 V
10 V
0
50
100
150
200
250
012345
VDS [V]
ID [A]
Rev. 1.02 page 5 2006-06-02
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=67 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
5
10
15
20
25
30
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
83 µA
830 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
105
104
103
102
101
0 20406080
VDS [V]
C [pF]
25 °C
175 °C
25 °C, 98%
175 °C, 98%
103
102
101
100
0 0.5 1 1.5 2
VSD [V]
IF [A]
Rev. 1.02 page 6 2006-06-02
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=67 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
20 V
50 V
80 V
0
2
4
6
8
10
12
0 1020304050
Qgate [nC]
VGS [V]
90
95
100
105
110
115
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
150 °C
1
10
100
1000
1 10 100 1000
tAV [µs]
IAS [A]
Rev. 1.02 page 7 2006-06-02
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
PG-TO220-3: Outline
Rev. 1.02 page 8 2006-06-02
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
Rev. 1.02 page 9 2006-06-02
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
PG-TO-263 (D²-Pak)
Rev. 1.02 page 10 2006-06-02
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
PG-TO252-3: Outline
Rev. 1.02 page 11 2006-06-02
IPB12CN10N G IPD12CN10N G
IPI12CN10N G IPP12CN10N G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
A
ll Rights Reserved.
A
ttention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 1.02 page 12 2006-06-02
