2011-06-14
1
BAR67...
Silicon PIN Diode
For low loss RF switches and attenuators
Very low capacitance at zero volt reverse
bias at frequencies above 1 GHz (typ. 0.25 pF)
Low forward resistance (typ. 1.5 @ 5mA)
Low harmonics
Pb-free (RoHS compliant) package
BAR67-02V BAR67-04
!
,
,
Type Package Configuration LS(nH) Marking
BAR67-02V
BAR67-04
SC79
SOT23
single
series
0.6
1.8
T
PMs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR150 V
Forward current IF200 mA
Total power dissipation
TS 118°C, BAR67-02V
TS 25°C, BAR67-04
Ptot
250
250
mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 125
Storage temperature Tst
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BAR67-02V
BAR67-04
RthJS
115
290
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
2011-06-14
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BAR67...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 5 µA
V(BR) 150 - - V
Reverse current
VR = 100 V
IR- - 20 nA
Forward voltage
IF = 50 mA
VF- 0.95 1.2 V
AC Characteristics
Diode capacitance
VR = 5 V, f = 1 MHz
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
CT
-
-
-
-
0.35
0.35
0.25
0.23
0.55
0.9
-
-
pF
Reverse parallel resistance
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
RP
-
-
-
25
4
2.5
-
-
-
k
Forward resistance
IF = 5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
-
-
1.5
1
1.8
-
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100
τ rr - 700 - ns
I-region width WI- 13 - µm
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Diode capacitance CT = ƒ (VR)
f = Parameter
0 5 10 15 20 25 30 V40
VR
0.1
0.15
0.2
0.25
0.3
0.35
0.4
F
0.5
CT
1 MHz
100 MHz
1 GHz
1.8 GHz
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
0 5 10 15 20 25 30 V40
VR
-1
10
0
10
1
10
2
10
3
10
4
10
KOhm
Rp
100 MHz
1 GHz
1.8 GHz
Forward resistance rf = ƒ (IF)
f = 100MHz
10 -2 10 -1 10 0 10 1 10 2
mA
IF
-1
10
0
10
1
10
2
10
3
10
Ohm
rf
Forward current IF = ƒ (VF)
TA = Parameter
0 0.2 0.4 0.6 0.8 V1.2
VF
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
IF
-40 °C
25 °C
85 °C
125 °C
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Forward current IF = ƒ (TS)
BAR67-04
0 20 40 60 80 100 120 °C 150
TS
0
20
40
60
80
100
120
140
160
180
mA
220
IF
Forward current IF = ƒ (TS)
BAR67-02V
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
mA
250
IF
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR67-02V
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tP
0
10
1
10
2
10
IFmax/IFDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
BAR67-02V
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tP
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
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BAR67...
Permissible Puls Load RthJS = ƒ (tp)
BAR67-04
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tP
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
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BAR67...
Package SC79
2011-06-14
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BAR67...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC751)) CES-Code
1) New Marking Layout for SC75, implemented at October 2005.
.
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
01apAPapAPapAP
02bqBQbqBQbqBQ
03crCRcrCRcrCR
04dsDSdsDSdsDS
05et ETet ETet ET
06fuFUfuFUfuFU
07gvGVgvGVgvGV
08hxHXhxHXhxHX
09jyJYjyJYjyJY
10kzKZkzKZkzKZ
11l 2L4l 2L4l 2L4
12n3N5n3N5n3N5
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BAR67...
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2011-06-14
9
BAR67...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
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please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
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Life support devices or systems are intended to be implanted in the human body or
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