TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/439
Devices Qualified Level
2N5038 2N5039
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N5038 2N5039 Units
Collector-Emitter Voltage VCEO 90 75 Vdc
Collector-Base Voltage VCBO 150 125 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Base Current IB 5.0 Adc
Collector Current IC 20 Adc
Total Power Dissipation @ TC = +250C (1) PT 140 W
Operating & Storage Temperature Range Top, Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 1.25 0C/W
1) Derate linearly 800 mW/0C for TC > +250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc 2N5038
2N5039
V(BR)CEO
90
75
Vdc
Emitter-Base Breakdown Voltage
IE = 25 mAdc V(BR)EBO 7.0 Vdc
Collector-Base Cutoff Current
VCE = 150 Vdc 2N5038
VCE = 125 Vdc 2N5039
ICBO
1.0
1.0
µAdc
Collector-Base Cutoff Current
VCE = 70 Vdc 2N5038
VCE = 55 Vdc 2N5039
ICEO
1.0
1.0
µAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc IEBO 1.0 µAdc
Collector-Emitter Cutoff Current
VBE = -1.5 Vdc VCE = 100 Vdc 2N5038
VBE = -1.5 Vdc VCE = 85 Vdc 2N5039
ICEX
5.0
5.0
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
TO-3*
(TO-204AA)
2N5038, 2N5039, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 0.5 Adc, VCE = 5.0 Vdc 2N5038
2N5039
IC = 2.0 Adc, VCE = 5.0 Vdc 2N5038
2N5039
IC = 12 Adc, VCE = 5.0 Vdc 2N5038
IC = 10 Adc, VCE = 5.0 Vdc 2N5039
hFE
50
30
50
30
15
15
200
150
Collector-Emitter Saturation Voltage
IC = 12 Adc, IB = 1.2 Adc 2N5038
IC = 10 Adc, IB = 1.0 Adc 2N5039
IC = 20 Adc, IB = 5.0 Adc Both
VCE(sat)
1.0
1.0
2.5
Vdc
Base-Emitter Saturation Voltage
IC = 20 Adc, IB = 5.0 Adc VBE(sat)
3.3 Vdc
Base-Emitter Voltage
IC = 12 Adc, VCE = 5.0 Vdc 2N5038
IC = 10 Adc, VCE = 5.0 Vdc 2N5039
VBE
1.8
1.8 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz hFE 12 48
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 500 pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 ± 2 Vdc; IC = 12 Adc; IB1= 1.2 Adc 2N5038
VCC = 30 ± 2 Vdc; IC = 10 Adc; IB1= 1.0 Adc 2N5039
ton 0.5 µs
Turn-Off Time
VCC = 30 ± 2 Vdc; IC = 12 Adc; IB1 = -IB2 = 1.2 Adc 2N5038
VCC = 30 ± 2 Vdc; IC = 10 Adc; IB1 = -IB2 = 1.0 Adc 2N5039
toff 2.0 µs
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 28 Vdc, IC = 5.0 Adc
Test 2
VCE = 45 Vdc, IC = 0.9 Adc
Test 3
VCE = 7.0 Vdc, IC = 20 Adc
Test 4
VCE = 90 Vdc, IC = 0.23 Adc 2N5038
Test 4
VCE = 75 Vdc, IC = 0.32 Adc 2N5039
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
