EiceDRIVERTM Boost Booster for Automotive Applications 1EBN1001AE Single Channel Booster for Inverter Systems Final Datasheet Hardware Description Rev. 3.0, 2015-04-30 ATV HP EDT Edition 2015-04-30 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. EiceDRIVERTM Boost 1EBN1001AE Revision History Page or Item Subjects (major changes since previous revision) Rev. 3.0, 2015-04-30 Page 12 Updated Figure 2-2. Page 13 Updated Table 3-1. Page 15 Updated Figure 3-1. Page 17 Updated Table 3-4. Page 18 Updated Table 3-7 (parameter RPIN15). Page 18 Updated Table 3-8 (parameter HFETOFF, VTOFFDP and VACLIDP). Page 20 Updated Table 3-9 (parameter tACLI, tASC_ON, tASC_OFF). Rev. 2.1, 2014-07-25 All All sections updated Trademarks of Infineon Technologies AG AURIXTM, C166TM, CanPAKTM, CIPOSTM, CIPURSETM, EconoPACKTM, CoolMOSTM, CoolSETTM, CORECONTROLTM, CROSSAVETM, DAVETM, EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPIMTM, EiceDRIVERTM, eupecTM, FCOSTM, HITFETTM, HybridPACKTM, IRFTM, ISOFACETM, IsoPACKTM, MIPAQTM, ModSTACKTM, my-dTM, NovalithICTM, OptiMOSTM, ORIGATM, PRIMARIONTM, PrimePACKTM, PrimeSTACKTM, PRO-SILTM, PROFETTM, RASICTM, ReverSaveTM, SatRICTM, SIEGETTM, SINDRIONTM, SIPMOSTM, SmartLEWISTM, SOLID FLASHTM, TEMPFETTM, thinQ!TM, TRENCHSTOPTM, TriCoreTM. Other Trademarks Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM, ARMTM, MULTI-ICETM, KEILTM, PRIMECELLTM, REALVIEWTM, THUMBTM, VisionTM of ARM Limited, UK. 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SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM, PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of Texas Instruments Incorporated. VXWORKSTM, WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex Limited. Last Trademarks Update 2011-02-24 Final Datasheet Hardware Description 3 Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 1.1 1.2 1.3 Product Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Feature Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Target Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.1 2.2 2.2.1 2.2.2 2.3 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Pin Configuration and Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 3 3.1 3.2 3.3 3.4 3.5 3.5.1 3.5.2 Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I/O Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Final Datasheet Hardware Description 4 7 7 7 8 13 13 16 17 17 18 18 20 Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE List of Figures List of Figures Figure 2-1 Figure 2-2 Figure 3-1 Figure 4-1 Figure 4-2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Recommended Footprint (all dimensions in mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Final Datasheet Hardware Description 5 10 12 15 21 22 Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE List of Tables List of Tables Table 2-1 Table 3-1 Table 3-2 Table 3-3 Table 3-4 Table 3-5 Table 3-6 Table 3-7 Table 3-8 Table 3-9 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Component Values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Supply Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics for Pins: DACLP, ASC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics for Pins TONI, TOFFI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics for Pins: TONO, TOFFO, ACLI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Final Datasheet Hardware Description 6 10 13 16 17 17 18 18 18 18 20 Rev. 3.0, 2015-04-30 1EBN1001AE 1 Product Definition 1.1 Overview The 1EBN1001AE is an IGBT / MOSFET Gate Driver Booster designed for automotive motor drives above 10kW. The 1EBN1001AE is based on high performance bipolar technology and aims at replacing buffer stages based on discrete devices. Because of its thermally optimized exposed pad package, the 1EBN1001AE is able to drive and sink peak currents up to 15 A. This makes this device suitable for most inverter systems in automotive applications. Next to the basic gate driving functions, the 1EBN1001AE also supports advanced functions such as active clamping (with external diode) with fast reaction time. The active clamping function can also be inhibited via an external signal. Additional features are also implemented in order to ease the implementation of Active Short Circuit (ASC) strategies and make the device suitable for safety related systems up to ASIL D (as per IEC 61508 and ISO 26262). The 1EBN1001AE can be used optimally with Infineon's 2nd generation of Gate Driver IC such as the 1EDI200xAS "EiceSIL". 1.2 Feature Overview The following features are supported by the 1EBN1001AE: * * * * * * * * * * * * * * Single Channel IGBT / MOSFET Gate Driver Booster. Suitable for IGBT classes up to 650 V / 800A and 1200 V / 400A. Peak current up to IPK = +/- 15A (for 1.5s). Continuous current up to ICONT = 2 x 0.75 Arms at 10 kHz (CLOAD=300nF). Low propagation delay and minimal PWM distortion. Separate turn-on and turn-off signals pathes. Support for Active Clamping with very fast reaction time. Active Clamping Disable and ASC Input signals. Support for negative turn-off bias. Optimal support of EiceSIL functions. 14-pin PG-DSO-14 exposed pad green package. Operational ambient temperature range from -40C to 125C. Automotive qualified (as per AEC Q100). Suitable for systems up to ASIL D requirements (as per IEC 61508 and ISO 26262). Product Name Ordering Code Package 1EBN1001AE SP001002438 PG-DSO-14 Final Datasheet Hardware Description 7 Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE Product Definition 1.3 * * * Target Applications Inverters for automotive Hybrid Vehicles (HEV) and Electric Vehicles (EV). High Voltage DC/DC converter. Industrial Drive. Final Datasheet Hardware Description 8 Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE Functional Description 2 Functional Description 2.1 Introduction The 1EBN1001AE is an advanced bipolar single channel IGBT gate driver booster that can also be used for driving power MOS devices. The device has been developed in order to optimize the design of high performance safety relevant automotive systems. The turn-on and turn-off behavior of the IGBT is controlled via 2 pairs of pin: TONI and TOFFI which are connected to the gate driver, and TONO and TOFFO connected to the gate resistances of the IGBT. The structure of the output stage is basically that of an emitter-follower circuit, where the voltage at pin TONO (resp. TOFFO) follows the voltage at pin TONI (resp. TOFFI). The 1EBN1001AE is capable of driving up to 400mm2 of IGBT area, with a typical peak sink and source current capability of 15A. The active clamping input ACLI allows an external active clamping circuit to turn on the IGBT in case of overvoltage conditions detected on the IGBT. The active clamping function can be disabled in run time via pin DACLP. The input ASC aims at turning on the IGBT in case the system decides to set the motor in Active Short Circuit. An active ASC signal overrules the inputs signals TONI and TOFFI. During normal operation, the input of the device TONI and TOFFI are driven with input signals having same polarity. Driving actively TONI and TOFFI with opposite voltages(e.g. TONI at 15V and TOFFI at -8V) may lead, depending on the signal configuration, to irreversible damage to the device. It should be ensured at system level that such case do not happen (e.g. by setting the gate driver in tristate mode). The internal Short Circuit Protection (SCP) prevents in the device the generation of short circuits in case TONI and/or TOFFI is floating. Final Datasheet Hardware Description 9 Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE Functional Description 2.2 Pin Configuration and Functionality 2.2.1 Pin Configuration DACLP 14 2 TOFFI ASC 13 3 TONI ACLI 12 4 VEE2 VCC2 11 5 TOFFO TONO 10 6 VEE2 VCC2 9 7 TOFFO TONO 8 15 VEE2_EP GND2 (exposed pad) 1 Figure 2-1 Pin Configuration Table 2-1 Pin Configuration Pin Number Symbol I/O Voltage Class Function 1 GND2 Ground Ground Ground 2 TOFFI Input 15V Turn-Off Input 3 TONI Input 15V Turn-On Input 4, 6 VEE2 Supply Supply Negative Power Supply 5, 7 TOFFO Output 15V Turn-Off Output 8, 10 TONO Output 15V Turn-On Output 9, 11 VCC2 Supply Supply Positive Power Supply 12 ACLI Input 15V Active Clamping Request Input 13 ASC Input 5V Active Short Circuit Input 14 DACLP Input 5V Active Clamping Disable Input 15 VEE2_EP n/a n/a Thermal Pad, can be left open or connected to VEE21). 1) This pad is aimed at thermal coupling. Supply current shall flow through pins 4 and 6. Final Datasheet Hardware Description 10 Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE Functional Description 2.2.2 Pin Functionality VEE2, VEE2_EP Negative power supply, referring to GND2. VCC2 Positive power supply side, referring to GND2. GND2 Reference ground. TONI Input pin for turning on the IGBT. An internal weak pull-down resistance ties this signal to VEE2 in case it is open. TOFFI Input pin for turning off the IGBT. An internal weak pull-down resistance ties this signal to VEE2 in case it is open. ASC Active short circuit input, used by the external circuit to turn on the booster. This signal is high active. An internal weak pull-down resistance ties this signal to GND2 reference in case it is open. The ASC signal overrules the commands at pins TONI and TOFFI. DACLP Input pin used to disable the active clamping function of the booster. This signal is high active. An internal weak pull-up resistance ties this signal to an internal 5V reference in case it is open. ACLI Active clamping request input pin, used by the external active clamping circuit to turn on the booster. TONO Output pin for turning on the IGBT. TOFFO Output pin for turning off the IGBT. Final Datasheet Hardware Description 11 Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE Functional Description 2.3 Block Diagram VCC2 VCC2 ACLI TONI TONO SCP Level Shifter TONO TOFFO TOFFI TOFFO 5V DACLP ASC Signal Decoding / Level Shifting GND2 VEE2 VEE2 Figure 2-2 Block Diagram Final Datasheet Hardware Description 12 Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE Specification 3 Specification 3.1 Application Circuit Table 3-1 Component Values Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Decoupling Capacitance Cd (Between VEE2 and GND2) 2 x 0.5 11 - F 10F capacitance next to the power supply source (e.g. flyback converter). 1 F close to the device. It is strongly recommended to have at least two capacitances close to the device (e.g. 2 x 500nF). Decoupling Capacitance Cd (Between VCC2 and GND2) - 11 - F 10F capacitance next to the power supply source (e.g. flyback converter). 1 F close to the device. Decoupling Capacitance Cd (Between VCC1 and GND1) - 11 - F 10F capacitance next to the power supply source (e.g. flyback converter). 1 F close to the device. Series Resistance Rs1 0 1 - k Pull-up Resistance Rpu1 - 10 - k Filter Resistance R1 - 1 - k Filter Capacitance C1 - 47 - pF Reference Resistance Rref1 - 26.71) - k high accuracy, as close as possible to the device Reference Capacitance Cref1 - 100 - pF As close as possible to the device. Pull-up Resistance Rpu2 - 10 - k Reference Resistance Rref2 - 23.7 - k high accuracy, as close as possible to the device Reference Capacitance Cref2 - 100 - pF As close as possible to the device. DESAT filter Resistance Rdesat 1 3 k Depends on required response time. DESAT filter Capacitance Cdesat n/a nF Depends on required response time. DESAT Diode Ddesat - n/a - - HV diode, type tbd OSD Filter Resistance Rosd - 1 - k OSD Filter Capacitance Cosd - 47 - pF Sense Resistance Rsense - n/a - Final Datasheet Hardware Description 13 Depends on IGBT specification. Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE Specification Table 3-1 Component Values (cont'd) Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition OCP filter Resistance Rocp - n/a - Depends on required response time. OCP filter Capacitance Cocp - n/a - nF Depends on required response time. OCPG Resistance Rocpg 0 - 100 nF Depends on required response time. DACLP filter Resistance Rdaclp - 1 - k DACLP filter Capacitance Cdaclp - 470 - pF NUV2 Filter Resistance R2 - n/a - NUV2 Filter Capacitance C2 - - 100 pF Active Clamping Resistance Racl1 - n/a - Depends on application requirements Active Clamping Resistance Racl2 - n/a - k Depends on application requirements Active Clamping Capacitance Cacli - n/a - nF Depends on application requirements TVS Diode Dtvsacl1, Dtvsacl2 - n/a - - Depends on application requirements Active Clamping Diode Dacl - n/a - - Depends on application requirements ACLI Clamping Diode Dacl2 - n/a - - Depends on application requirements VREG Capacitance Cvreg F As close as possible to the device. Gate Resistance Rgon 0.5 - - Gate Resistance Rgoff 0.5 - - Gate Clamping Diode Dgcl1 - n/a - - 2) Gate Clamping Diode Dgcl2 - n/a - - E.g. Schottky Diode type tbd. 2) Gate Series Resistance Rgate 0 10 - Optional component VEE2 Clamping Diode Dgcl3 - n/a - - E.g. Schottky Diode type tbd. 2) 1 Depends on required response time. 1) 26.1 kOhm can also be used 2) Need of this components is application specific. Final Datasheet Hardware Description 14 Rev. 3.0, 2015-04-30 LVLogic Rpu1 15 GND1 R1 R1 RS1 R1 R1 R1 R1 R1 Rpu1 Cref1 Cd GN D1 GN D1 GN D1 GN D1 C1 C1 C1 C1 C1 C1 C1 VCC1 REF0 REF0 Rpu1 Final Datasheet Hardware Description Rref1 +5V Rref2 GND1 IREF1 NCS VEE2 VREG GND2 OCPG OCP GATE NUV2 OSD IREF2 DACLP EiceDRIVER SIL SCLK SDO SDI NRST/RDY REF0 EN Cd Cosd 8V GND2 Rosd GND2 Cref2 Cvreg Cocp 0Vector Generation RDACLP GND2 Rocp Rse nse Rocpg R2 Rpu2 GND2 C2 Dg cl3(*) Lse nse(*) C2DACLP VCC2 VCC2 ASC Rg ate(*) VEE2 VEE2 Cd GND2 Cd TOFFO TONO ACLI GND2 EiceDRIVER Boost GND2 DACLP TOFFI TOFF GND2 INSTP GND2 Rdes at TONI DEBUG NFLTB Cdes at +15V TON DESAT NFLTA Cd INP VCC2 VCC1 VEE2 Da cl2 Ca cli VCC2 VEE2 Dg cl2(*) Dg cl1(*) Rg off Rg on Dtvsa cl1 Ra cl2(*) VEE2 VCC2 Ra cl1 Da cl Dtvsa cl2(*) Ddes at EiceDRIVERTM Boost 1EBN1001AE Specification Figure 3-1 Application example Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE Specification 3.2 Absolute Maximum Ratings Stress above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 3-2 Absolute Maximum Ratings1) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Junction temperature TJUNC -40 - 150 C Storage temperature TSTO -55 - 150 C Positive power supply VCC2 -0.3 - 28 V Referenced to GND2 Negative power supply VEE2 -13 - 0.3 V Referenced to GND2 Power supply voltage difference VDS2 (secondary) VCC2-VEE2 - - 40 V Voltage on class 5V pins VIN5 -0.3 - 6.5 V Referenced to GND2 Voltage on class 15V pins. VIN15 VEE2-0.3 - VCC2+0.3 V Referenced to GND2 Input current on class 5V pins IIN5 - - 1.0 mA Input/Output Current on pin TONI, TOFFI ITI15 -200 - 200 mA DC current -2.0 - 2.0 A Peak current for 1.5s Input/Output Current on pin TONO, TOFFO ITO15 -200 - 200 mA DC current -15.0 - 15.0 A Peak current for 1.5s Input Current on pin ACLI IACLIN - - 10.0 mA Peak Current for 1.5 s Cross current between TONI and ICCI TOFFI - - 300 mA Peak Current for 6 s ESD Immunity - - 2 kV HBM2) - - 500 V CDM3) n.a. 3 n.a. MSL Level VESD MSL 1) Not subject to production test. Absolute maximum Ratings are verified by design / characterization. 2) According to EIA/JESD22-A114-B. 3) According to JESD22-C101-C. Final Datasheet Hardware Description 16 Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE Specification 3.3 Operating range The following operating conditions must not be exceeded in order to ensure correct operation of the 1EBN1001AE. All parameters specified in the following sections refer to these operating conditions, unless otherwise noticed. Table 3-3 Operating Conditions Parameter Symbol Values Unit Min. Typ. Max. Note / Test Condition Ambient temperature TAMB -40 - 125 C Junction temperature TJUNC -40 - 150 C Positive power supply (secondary) VCC2 13.0 15.0 18.0 V Negative power supply VEE2 -10.0 -8.0 -5.0 V Referenced to GND2 kHz 1) PWM switching frequency fsw - - 30 Referenced to GND2 1) Maximum junction temperature of the device must no be exceeded. 3.4 Thermal Characteristics The indicated parameters apply to the full operating range, unless otherwise specified. Table 3-4 Thermal characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. - 25 - K/W Tamb=25C1) Thermal Resistance Junction to Case RTHJCB bottom - - 0.8 K/W Tamb=25C1) Thermal Resistance Junction to Case RTHJCT top - - 40 K/W Tamb=25C1) Thermal Resistance Junction to Ambient RTHJA 1) Not subject to production test. This parameter is verified by design / characterization. Final Datasheet Hardware Description 17 Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE Specification 3.5 Electrical Characteristics The indicated electrical parameters apply to the full operating range, unless otherwise specified. 3.5.1 I/O Electrical Characteristics Table 3-5 Power Supply Current Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. VCC2 bias current ICC2 - 1.6 3.1 mA Tamb=25C,Vcc2=20V, VEE2=-10V, all pins open VEE2 bias current IEE2 - 1.3 2.8 mA Tamb=25C,Vcc2=20V, VEE2=-10, all pins open VCC2 steady state current with ASC active ICC2_ASC - 12.6 22 mA Tamb=25C,Vcc2=20V, VEE2=-10V, VASC=5V, all other pins open VEE2 steady state current with ASC active t IEE2_ASC - 6.3 11 mA Tamb=25C,Vcc2=20V, VEE2=-10V, VASC=5V, all other pins open Table 3-6 Electrical Characteristics for Pins: DACLP, ASC Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Low Input Voltage VIN5L 0 - 1.5 V Referenced to GND2 High Input Voltage VIN5H 3.5 - 5.5 V Referenced to GND2 Input Voltage Hysteresis VIN5HYST 0.4 0.9 - V Input pull-up / pull-down resistance (5V pin) RPIN5 52 81 k Table 3-7 30 Electrical Characteristics for Pins TONI, TOFFI Parameter Symbol Input pull-up / pull-down resistance (15V pin) RPIN15 Values Unit Note / Test Condition Min. Typ. Max. 30 50 90 Table 3-8 Electrical Characteristics for Pins: TONO, TOFFO, ACLI Parameter Symbol Values Typ. Max. TONO static forward current transfer HFETON ratio 10 40 70 TONO transistor static ON-state voltage drop 0.3 0.7 1.0 Final Datasheet Hardware Description 18 Tamb=25C Unit Note / Test Condition Min. VTONDP k VTONI= VCC2, ITONO=100mA V VTONI= VCC2=15V, ITONO=10mA Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE Specification Table 3-8 Electrical Characteristics for Pins: TONO, TOFFO, ACLI (cont'd) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. TOFFO static forward current transfer HFETOFF ratio 7 15 30 TOFFO transistor static ON-state voltage drop VTOFFDP 0.2 0.7 1.0 V VTOFFI= VEE2=-8V, VCC2=15V, ITOFFO=10mA Peak source current at TONO ION15PK2 - - 15 A Duration 1.5s, CLast=300nF, Tamb=125C, 1) Peak sink current at TOFFO IOF15PK2 -15 - A Duration 1.5s, CLast=300nF, Tamb=125C, 1) Effective RMS source current at TONO ION15EF2 - - A CLast=300nF, Tamb=125C, fsw=10kHz, 0.75 VTOFFI= VEE2, ITOFFO=100mA 1) EffectiveRMS sink current at TOFFO IOF15EF2 -0.75 - - A CLast=300nF, Tamb=125C, fsw=10kHz, 1) ACLI transistor static ON-state voltage drop (to TONO) VACLIDP 1.2 2.3 3.0 V VACLI= VCC2=15V, ITONO=10mA 1) Verified by design / characterization, not subject to production test. Final Datasheet Hardware Description 19 Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE Specification 3.5.2 Switching Characteristics Table 3-9 Switching Characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Input to Output Propagation Delay ON tPDON - 10 - ns VCC2=15V, VEE2=0V, Tamb=25C,dVin=5V step, RLOAD=150Ohm Input to Output Propagation Delay OFF tPDOFF - 10 - ns VCC2=15V, VEE2=0V, Tamb=25C, dVin=5V step, RLOAD=100Ohm Input to Output Propagation Delay Distortion tPDDISTO -10 - 10 ns VCC2=15V, VEE2=-8V, Tamb=25C 1) Turn-Off time tTOOFF - - 70 ns VCC2=15V, VEE2=-8V, CLOAD = 300 nF, dVout = 1V, Tamb=25C1) Rise Time tRISE - 50 - ns VCC2=15V, VEE2=-8V, CLOAD =10 nF, 10%-90% transition, Tamb=25C1) Fall Time tFALL - 90 - ns VCC2=15V, VEE2=-8V, CLOAD = 10 nF, 90%-10% transition, Tamb=25C, 1) Active clamping reaction time tACLI - 40 90 ns VCC2=15V, VEE2=0V, dVout=1V, RLOAD=150Ohm ASC turn-on reaction time tASC_ON - 80 200 ns VCC2=10V, VEE2=0V, dVout=1V, RLOAD=150Ohm ASC turn-off reaction time tASC_OFF - 500 1300 ns VCC2=10V, VEE2=0V, dVout=1V, RLOAD=150Ohm 1) Verified by design / characterization. Not subject to production test. Final Datasheet Hardware Description 20 Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE Package Information 4 Package Information Figure 4-1 Package Outlines The typical footprint shown Figure 4-2 can be used: Final Datasheet Hardware Description 21 Rev. 3.0, 2015-04-30 EiceDRIVERTM Boost 1EBN1001AE Package Information Figure 4-2 Recommended Footprint (all dimensions in mm) Note: Depending on the application requirements, some thermally optimized footprint might be needed on PCB. Final Datasheet Hardware Description 22 Rev. 3.0, 2015-04-30 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG