T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 1 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
Available on
commercial
versions
Schottky Barrier Diode
Qualified per MIL-PRF-19500/444
Quali f i ed Lev els:
JAN , JANTX, and
JANTXV
DESCRIPTION
This Schottky barrier diode is metallurgically bonded and offer s mili tary gr ade qualifications
for high-reliability applications on “1N” prefixed numbers. This small di ode is hermetically
seal ed and bonded into a DO-35 glass package.
DO-35 (DO-204AH)
Package
A lso available in:
UB package
(3-pin surf ac e mo unt)
1N5711UB, 1N57 12U B
(B, CC, CA)
DO-213AA package
(s urf ace mount )
1N5711UR-1, 1N5712UR-1,
1N6857UR-1, and
1N6858UR-1
Important: For the latest information, v isit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1 numbers.
• Metallurgically bonded.
• JAN, JANTX , JANTXV and commercial qualifications also available per MIL-PRF-19500/444 on
“1N” numbers only.
(See Part Nomenclature for all available options).
• RoHS com pliant versions available (commercial grade only).
APPLICATIONS / BENE FITS
• Low reverse leakage characteristics.
• Small size for high density mounting using flexible thru-hole leads (see package illustration).
• ESD sensitive to Class 1.
MAXIMUM RATINGS @ 25 ºC unles s other wis e stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and St orage Temperature
TJ and TSTG
-65 to +150
ºC
Thermal Resistance, Juncti on-to-Lead
@ lead length = 0.375 inch (9.52 mm) from body
R
ӨJL
250
ºC/W
Average Rectified Output Current:
1N5711 (1)
DSB2810, DSB5712, 1N5712 & 1N6858 (2)
1N6857
(3)
IO
33
75
150
mA
Solder Temperature @ 10 s
260
oC
NOTES: 1. At TL = +130°C and L = 0.375 inch, derate IO to 0 at +150°C.
2. At TL = +110°C and L = 0.375 inch, derate IO to 0 at +150°C.
3. At TL = +70°C and L = 0.375 inch, derate IO to 0 at +150°C.
T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 2 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
M ECHANICAL and PACKAGING
• CASE: Hermetically sealed glass package.
• TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on co mmerc ial grade only) over copper clad steel. Solderable per
MIL-STD-750, m ethod 2026.
• POLARITY: Cathode indicated by band.
• MARKING: Part number.
• TAPE & REEL option: Standard per EIA -296. Consult factory for quantities.
• WEIGHT: Approximately 0.2 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N5711 -1 (e3)
JAN = JAN lev el
JANTX = JANTX level
JANTXV = JANTXV level
CDS (reference JANS)*
Blank = Commercial grade
*Av a ilab le on ly on 1N5 711 -1
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (on
commercial grade only )
Blank = non-RoHS compliant
Metallurgically Bonded
DSB 2810 (e3)
Series number
(see Electrical Charac teristics
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
SYMBOL S & DEFI NITIONS
Symbol
Definition
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
f
frequency
IR
Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the s pecified voltage VR.
IO
Average Rectified Output Current: The Output Current averaged over a full cycl e with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
trr
Reverse Recovery Time: The time i nterval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
V
(BR)
Breakdown Voltage: A voltage in the breakdown region.
VF Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current.
VR
Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region.
VRWM
Working Peak Reverse Vol tage: The peak voltage exc luding all transient voltages (ref JESD282-B). Also sometimes
known historically as PIV.
T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 3 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
ELECTRI CAL CHARACTERISTICS @ 25 ºC unless other wise noted
TYPE
NUMBER
MINIMUM
BREAKDOWN
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
WORKING
PEAK
REVERSE
VOLTAGE
MAXIMUM
REVERSE
LEAKAGE
CURRENT
MAXIMUM
CAPACITANCE
@ VR = 0
VOLTS
f = 1.0 MHz
V(BR) @ 10 µA
VF @ 1 mA
VF @ IF
VRWM
IR @ VR
C
Volts
Volts
V @ mA
V (p k)
nA
Volts
pF
1N5711-1
70
0.41
1.0 @ 15
50
200
50
2.0
1N5712-1
20
0.41
1.0 @ 35
16
150
16
2.0
1N6857-1
20
0.35
0.75 @ 35
16
150
16
4.5
1N6858-1
70
0.36
0.65 @ 15
50
200
50
4.5
DSB2810
20
0.41
1.0 @ 35
16
100
15
2.0
DSB5712
20
0.41
1.0 @ 35
16
150
16
2.0
T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 4 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
GRAPHS
VF – For ward V ol tage (V )
FIGURE 1
I-V C urve showin g typical Forwar d Volt age Variation
Temperatu r e for the 1N5712-1, DSB5712 and DSB2810 Schottky Diodes
VR – Revers e Voltag e ( V) (PULSED )
FIGURE 2
1N5712-1, DSB5712 and DSB2810 Typi cal v ar iation of Re verse
Cu rrent (IR) vs Reverse Voltag e ( VR) at V ar i ous Temp er atures
I
R
– Reverse Current (nA)
I
F
– Forward Current (mA)
T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 5 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
GRAPHS
VF – For ward V ol tage (V)
FIGURE 3
I – V curve sh owing typ ical For ward Voltag e Variation
Wit h Temp er ature S ch ott ky Di ode 1N5 711
VR – Revers e Voltag e ( V) (PULSED )
FIGURE 4
1N5711 Typi cal Variation of Rev er se Current (IR) vs Reverse V oltage (VR)
at Various Temp er atures
IF – Forward Current (mA)
I
R
– Reverse Current (nA)
T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 6 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
GRAPHS
IF – F orward Current (mA) (PULSE D )
FIGURE 5
Typical Dynamic R esistance (RD) vs F orw ar d Current (IF)
R
D
– Dynamic Resistance (Ohms)
T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 7 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
PACKAGE DIM ENSIONS
NOTES:
1. Dimensions are in inches. Millimeters are given for information only.
2. Dimensions BL and LD includes all components of the diode
periphery expec t the sec tion of the leads over which the diameter is
controlled.
3. Dimension BD shall be measured at the largest diameter.
4. In accordance with ASME Y1.4M, diam eters are equivalents to φx
symbology.
Dimensions
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
BD
0.068
0.076
1.73
1.93
2,3
BL
0.125
0.170
3.18
4.32
2
LD
0.014
0.022
0.36
0.56
LL
1.000
1.500
25.40
38.10