MOTOROLA @ SEMICONDUCTOR xx = TECHNICAL DATA 2N6082 | The RF Line 25 W 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTORS ... designed for 12.6 Volt VHF large-signal amplifier applications required in commercial and industrial equipment operating to 300 MHz. @ Specified 12 5 Volt, 175 MHz Characteristics Output Power = 25 W Minimum Gain = 6.2 dB Efficiency = 65% STYLE 1 PIN EMITTER MAXIMUM RATINGS 2 BASE a 3 EMITTER J Rating Symbol Value Unit 4 COLLECTOA Collector-Emitter Voltage VcEO 18 Vde oa Ul Collector-Base Voitage Vcso 36 Vde NOTES 1 DIMENSIONING AND TOLERANCING PER ANSI Emitter-Base Voitage VEBO 4.0 Vde Y145M 1982 NTR Collector Current Continuous Io 5.0 Adc 2 ONTROLLING DIMENSION INCH Total Device Dissipation @ Tce = 26C(2) Pp 65 Watta 1 Derate above 25C 37 wre Storage Temperature Range Tstg ~5 to +200 C Stud Torque(1) a 65 in.tb, "\|ndicates JEDEC Registered Data for 2N6082 (1) For Repeated Assembly Usa Stn Ib (2) These devices are designed for RF operation The tatal device dissipation rating applies only when the devices are operated as AF amplifiers CASE 1454-09 MOTOROLA RF DEVICE DATAELECTRICAL CHARACTERISTICS (T = 25C unless atherwise noted) Characteristic Symbol | Min | Typ | Max I Unit _ | OFF CHARACTERISTICS Collector-Emitter Breakdown Voitage ViBRICEO 13 - ~ Vde {tg = 100 mAde, 1g = 0) Collector-Emitter Breakdown Voltage VIBRICES 36 - - Vde (Ig 15 mAdc, VgE = 0) Emuitter-Base Breakdown Voitage ViaR)EBO 40 E a Vde (ig = 5.0 mAde, Ic = 0) Collector Cutoff Current ICES a _ 10 mAdc (Vog = 18 Vide, Vge = 0, To = +55C Collector Cutoff Current \cBO _ - 10 mAdc (Vog * 15 Vde, Ie = 0) ON CHARACTERISTICS OC Current Gain hee 50 - - ~_ (Ug = 1.0 Ade, Vcg = 5.0 Vde) OYNAMIC CHARACTERISTICS Output Capacitance Cob ~ 110 130 oF (Veg = 15 Vide, Ie = 0, f= 0.1 MHz) FUNCTIONAL TEST Common-E mitter Ampiifier Power Gain Gpe 6.2 - - dB (Pour 25, Voc = 12.5 Vide, f = 175 MH2) Collector Efficiency n 65 - - % (Pour 25 W, Voc = 12.5 Vde, f= 175 MHz) "Indicates JEDEC Registered Data for 2NGO82 f FIGURE 1 175 Miz TEST CIRCUIT +125 Vie + our AROWEAR OFS REG 1000 oF cH ica ar OUTPUT RF INPUT *L M2 ui ar 100 pF Fy~ 100 pF pong 4n ? aa B "H ul C1234 50-80 pF ARCO 462 Straight Wire #14 AWG, t 3/8 Long 1Turn FIA AWG 38 1D, Length Plus Leads = 1 Vk20C 20/48 FERADXCUBE MOTOROLA AF DEVICE DATAPout. GUTPUT POWER (WATTS) FIGURE 2 OUTPUT POWER versus INPUT POWER FIGURE 3 OUTPUT POWER versus SUPPLY VOLTAGE 125 MHz 150 MHz 175 MHz Pin = GOW f= 175 MHz 225 MHz =125 Vde Pour QUTPUT POWER (WATTS) 20 40 $0 aa 1 50 60 70 sa 0680 10 W 12 13 14 6 Pin. INPUT POWER (WATTS) Voc. SUPPLY VOLTAGE (VOLTS} FIGURE 4 SERIES EQUIVALENT IMPEDANCE Fe Ver = 125 Vide oz Pout Ww ATHY a a a : zi a4 ay ~ m4 41 Frequency Zin . oq4 Maz Ohms Ohms zTt 130 Ti2 +122) 333+ 4: 3 140-4129 +1306 330+ 87 | S4o8) sq) | 125 +145 1 925 +430 | S4-| i680 | 120 +160 | 320 +175 ba d+) 170) [118-4175 | 317 #239 Sef |_teo__[178 +187 | 315 +260 T ay S nL Pore PROS Zou* = Conjugate of the optimum iad impedance into which the device output operates at a given output power, valtage and frequency