6 1.96 Siemens Matsushita Components
Characteristics
Ambient temperature
T
A= 25 (45) ˚C
Source impedance
Z
S= 50 Ω
Load impedance
Z
L= 2 kΩ || 3 pF
min. typ. max.
Center frequency
f
c— 43,75 — MHz
(center between 3 dB points)
Insertion attenuation α
Reference level for the 43,81 (43,75) MHz 13,0 14,5 16,0 dB
following data
Pass bandwidth
αrel ≤ 3 dB
B
3dB — 6,0 — MHz
αrel ≤ 30 dB
B
30dB — 7,6 — MHz
Relative attenuation αrel
41,28 (41,22) MHz – 0,8 0,2 1,2 dB
46,34 (46,28) MHz – 0,7 0,3 1,3 dB
40,81 (40,75) MHz 1,3 2,5 3,7 dB
46,81 (46,75) MHz 1,6 2,8 4,0 dB
40,31 (40,25) MHz 9,0 12,0 — dB
47,31 (47,25) MHz 9,0 13,0 — dB
39,81 (39,75) MHz 38,0 50,0 — dB
47,81 (47,75) MHz 38,0 52,0 — dB
Lower sidelobe
35,06 … 39,81 (35,00 … 39,75) MHz 38,0 46,0 — dB
Upper sidelobe
47,81 … 55,06 (47,75 … 55,00) MHz 38,0 44,0 — dB
Reflected wave signal suppression
1,3 µs … 6,0 µs after main pulse 42,0 52,0 — dB
(test pulse: 250 ns, carrier frequency: 43,81 MHz)
Feedthrough signal suppression
1,3 µs … 1,2 µs before main pulse 50,0 56,0 — dB
(test pulse: 250 ns, carrier frequency: 43,81 MHz)
Group delay ripple ∆τ
40,81 … 46,81 (40,75 … 46,75) MHz — 40 — ns
Impedance at 43,81 MHz
Input:
Z
IN =
R
IN ||
C
IN — 1,1 || 16,4 — —
Output:
Z
OUT =
R
OUT ||
C
OUT — 1,1 || 5,0 — —
Temperature coefficient of frequency
TC
f— – 72 — ppm/K
X 6964 M
43,75 MHz