TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 1 of 12 August 2009
AH225
1W High Linearity InGaP HBT Amplifier
Product Features
• 400 – 2700 MHz
• +31 dBm P1dB
• +47 dBm Output IP3
• 15 dB Gain @ 2140 MHz
• 300 mA Quiescent Current
• +5 V Single Supply
• MTTF > 100 Years
• Lead-free/RoHS-compliant
SOIC-8 Package
Applications
• Final stage amplifiers for Repeaters
• High Power Amplifiers
• Mobile Infrastructure
• LTE/WCDMA/CDMA/WiMAX
Product Description
The AH225 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance for various narrowband-
tuned application circuits with up to +47 dBm OIP3 and
+31 dBm of compressed 1dB power. It is housed in a lead-
free/RoHS-compliant SOIC-8 package. All devices are 100%
RF and DC tested.
The AH225 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. The AH225 is ideal for the final stage of
small repeaters or as driver stages for high power
amplifiers. In addition, the amplifier can be used for a wide
variety of other applications within the 400 to 2700 MHz
frequency band.
Functional Diagram
Function Pin No.
Iref 8
RFin 3
Vcc / RFout 6, 7
Vbias 1
GND Backside Paddle
N/C or GND 2, 4, 5
Specifications (1)
Parameter Units
Min Typ Max
Operational Bandwidth MHz 400 2700
Test Frequency MHz 2140
Gain dB 15.2
Input Return Loss dB 18
Output Return Loss dB 9.4
Output P1dB dBm +31.1
Output IP3 (2) dBm +47
WCDMA Channel Power (3)
@ -50 dBc ACLR dBm +21.4
Noise Figure dB 6.3
Vcc, Vbias V +5
Quiescent Current, Icq (4) mA 300
Iref mA 30
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +19 dBm / tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 2:1 rule
gives relative value w.r.t. fundamental tone.
3. 3GPP WCDMA, 1±64DPCH, ±5 MHz, no clipping, PAR = 10.2 dB @0.01% Probability.
4. This corresponds to the quiescent collector current or operating current under small – signal
conditions into pins 6 and 7.
Absolute Maximum Rating
Parameter Rating
Storage Temperature -65 to +150 °C
RF Input Power, CW, 50 Ω, T = 25ºC 26 dBm
Device Voltage, Vcc, Vbias +8 V
Device Current 900 mA
Device Power 5 W
Thermal Resistance, Rth 35 °C / W
Max Junction Temperature, TJ
For 106 hours MTTF +200 °C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
Parameter Units Typical
Frequency MHz 940 1960 2140
Gain dB 19.8 15.4 15.2
Input Return Loss dB 10.5 15.4 18
Output Return Loss dB 8.4 8.3 9.4
Output P1dB dBm +31 +31.3 +31
Output IP3 (5) dBm +47.3 +53.6 +47
WCDMA Channel Power (3)
@ -50 dBc ACLR dBm +21.7 +21.7 +21.4
Noise Figure dB 9.2 5.9 6.3
Vcc, Vbias V +5
Quiescent Current, Icq (4) mA 300
Iref mA 30
5. 3OIP is measured at 22 dBm / tone separated by 1 MHz, 940 MHz. 3OIP is measured at 19 dBm /
tone separated by 1 MHz, 1960 MHz, 2140 MHz respectively.
Ordering Information
Part No. Description
AH225-S8G 1W High Linearity InGaP HBT Amplifier
(lead-free/RoHS-compliant SOIC-8 Pkg)
AH225-S8PCB900 920 - 960 MHz Evaluation Board
AH225-S8PCB1960 1930 - 1990 MHz Evaluation Board
AH225-S8PCB2140 2110 - 2170 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
1
2
3
4
8
7
6
5
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AH225
1W High Linearity InGaP HBT Amplifier
Typical Device Data
S-Parameters (Vcc = +5 V, Icq = 300 mA, T = 25 °C, calibrated to device leads)
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
Gain and maximum Stable Gain
-5
0
5
10
15
20
25
30
35
40
45
Gain (d B)
2.14 GHz
21.66 dB
2.14 GHz
9.724 dB
DB(|S(2,1)|)
De_embedded S_parameter
DB(MSG())
De_embedded S_parameter
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-
2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11
Swp Max
4GHz
Swp Min
0.05GHz
2.14 GHz
r 0.54
x 0.86
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5
.0
-
5.
0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22
Swp Max
4GHz
Swp Min
0.05GHz
2.14 GHz
r 0.11
x -0.0044
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in blue color, DB [S (2, 1)]. For a tuned circuit for a particular frequency, it is
expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line, DB [MSG].
The impedance loss plots are shown from 0.05 – 4 GHz, with markers placed in 0.5 GHz increments.
S-Parameters (Vcc = +5 V, Icq = 300 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -2.90 -165.27 32.12 136.60 -40.91 46.68 -0.94 -74.85
100 -1.57 -171.34 28.59 116.71 -38.86 31.54 -1.66 -113.38
200 -0.99 179.84 23.57 100.17 -37.78 17.25 -1.95 -143.44
400 -0.81 169.25 17.96 86.66 -37.58 7.00 -2.15 -162.82
600 -0.90 160.62 14.68 78.31 -36.65 5.22 -1.99 -168.29
800 -0.97 152.64 12.56 69.77 -36.47 -0.03 -2.08 -173.99
1000 -1.12 145.10 11.02 62.27 -36.53 -6.84 -2.19 -175.67
1200 -1.25 136.77 10.01 54.20 -35.91 -8.53 -2.20 -177.71
1400 -1.53 128.95 9.29 46.48 -35.54 -14.78 -2.19 -178.63
1600 -1.94 120.22 8.97 37.27 -34.84 -22.26 -2.19 -179.79
1800 -2.52 110.16 8.93 27.07 -34.79 -32.76 -2.20 -179.60
2000 -3.69 98.77 9.27 13.27 -34.06 -50.56 -2.01 179.89
2200 -6.45 86.18 9.79 -4.317 -33.35 -72.56 -1.80 179.99
2400 -14.02 90.08 9.97 -28.41 -33.11 -107.74 -1.25 178.87
2600 -10.27 171.20 8.85 -57.83 -34.02 -157.07 -0.81 175.18
2800 -4.06 160.12 6.42 -84.65 -35.18 155.94 -0.73 170.72
3000 -1.93 143.93 3.19 -104.79 -34.70 116.80 -0.99 167.43
Application Circuit PC Board Layout
Circuit Board Material: Top RF layer is .014” Getek, єr = 4.0, 4 total layers (0.062” thick) for mechanical rigidity
1 oz copper, Microstrip line details: width = .030”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8, C5 and C2. The markers and vias are spaced in .050” increments.
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AH225
1W High Linearity InGaP HBT Amplifier
700 - 850 MHz Reference Design
Typical RF Performance at 25 °
°°
°C
Notes:
1. EVM Test set-up: 802.16 – 2004 OFDMA, 64 QAM – ½, 1024 FFT, 20symbols, 30 sub channels.
2. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5MHz offset, PAR = 10.2 dB @ 0.01% Prob.
3. OIP3 is measured at 20 dBm / tone output power with 1 MHz spacing.
4. Vref can be used as device power down voltage (low = RF off) by swapping R7 with R8.
5. The primary RF microstrip line is 50 Ω.
6. Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged.
7. Components shown on the silkscreen but not on the schematic are not used.
8. The distance from the edge of U1 to the edge of component C6 is 70 mils (3 º @ 750 MHz).
9. C5 is placed against the edge of C6.
10. The distance from the edge of U1 to the edge of component R5 is 10 mils (0.5 º @ 750 MHz).
11. C8 is placed against the edge of R5, L2 against C8 and C9 against L2.
12. C3 is not required and can be replaced with Copper trace.
13. Zero ohm jumpers may be replaced with copper traces in the target application layout.
14. DNP means Do Not Place.
15. L3 is critical for linearity performance.
16. FB1 (Ferrite Bead) act as inductor that avoid crosstalk between C15 and C1. Steward MI0603K300R-10.
S21 vs. Frequency
+25 ºC
16
17
18
19
20
21
600 650 700 750 800 850
900
Frequency (MHz)
S 2 1 (d B )
Return Loss vs. Frequency
+25 ºC
-25
-20
-15
-10
-5
0
600 650 700 750 800 850 900
Frequency (MHz)
R e tu r n L o s s (d B )
S11 S22
P1dB vs. Frequency
+25 ºC
26
27
28
29
30
31
700 730 760 790 820 850
Frequency (MHz)
P 1 d B (d B m )
ACLR vs. Pout vs. Freq
3GPP WCDMA, TM1+64DPCH, +5MHz Offset, +25 ºC
-60
-55
-50
-45
-40
-35
-30
17 18 19 20 21 22 23 24 25
Pout (dBm)
A C L R ( d B c )
700 MHz 750 MHz
800 MHz 850 MHz
EVM vs. Pout vs. Freq
OFDM, QAM-64, 54 Mb/s, +25 ºC
0
1
2
3
4
5
6
7
17 18 19 20 21 22 23 24 25
Pout (dBm)
E V M (% )
700 MHz 750 MHz
800 MHz 850 MHz
OIP3 vs. Pout/tone vs. Freq
1 MHz spacing, +25 ºC
30
35
40
45
50
12 14 16 18 20 22 24
Pout / tone (dBm)
O IP 3 (d B m )
700 MHz 750 MHz
800 MHz 850 MHz
Frequency MHz 700 750 800 850
Gain dB 20 20.1 20.2 20
Input Return Loss dB 12 14.5 16 13.3
Output Return Loss dB 6 7 8.6 11.5
Output P1dB dBm +29.9 +30.4 +30.7 +30.6
Channel Power (1)
@ 2.5% EVM dBm +22.8 +23.6 +23.3 +23.2
Channel Power (2)
@ -50 dBc WCDMA ACLR dBm +20.6 +21.2 +21.4 +21.1
OIP3 (3)
@ 20 dBm / tone dBm +44.1 +44.9 +44.6 +43.8
Icq mA 300
Iref mA 30
Vcc V +5
C
5
C6
R5
L2
C8
C9
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AH225
1W High Linearity InGaP HBT Amplifier
920 - 960 MHz Application Circuit (AH225-S8PCB900)
Typical RF Performance at 25 °
°°
°C
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5MHz offset, PAR = 10.2 dB @ 0.01% Prob..
2. OIP3 is measured at 22 dBm / tone output power with 1 MHz spacing.
3. Vref can be used as device power down voltage (low = RF off) by swapping R7 with R8.
4. The edge of L2 is placed at 170 mils from edge of AH225 RFin pin (8.5 º @ 940 MHz).
5. The edge of C2 is placed at 220 mils from edge of AH225 RFout pin (11 º @ 940 MHz).
6. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
7. Zero ohm jumpers may be replaced with copper traces in the target application layout.
8. DNP means Do Not Place.
9. The multilayer inductor L3 (22nH) on Vpd line is critical for linearity performance.
10. C11, R2, C10 can be located next to L2 and C3 can be located next to C2 to make the design compact.
11. FB1 (Ferrite Bead) act as inductor that avoid crosstalk between C15 and C1. Steward MI0603K300R-10.
S21 vs. Frequency
16
17
18
19
20
21
920 930 940 950 960
Frequency (MHz)
S 21 (dB )
-40ºC +25ºC +85ºC
S11 vs. Frequency
-20
-16
-12
-8
-4
0
920 930 940 950 960
Frequency (MHz)
S 11 (d B )
-40ºC +25ºC +85ºC
S22 vs. Frequency
-20
-16
-12
-8
-4
0
920 930 940 950 960
Frequency (MHz)
S22 (dB )
-40ºC +25ºC +85ºC
Gain vs. Pout vs. Temp
Frequency = 940 MHz
18
18.5
19
19.5
20
20.5
21
25 26 27 28 29 30 31 32
Pout (dBm)
G ain (d B)
-40ºC +25ºC +85ºC
Icc vs. Pout
3GPP WCDMA, TM1+64DPCH, +5MHz Offset, +25ºC
250
280
310
340
370
400
17 19 21 23 25
Pout (dBm)
Icc (m A )
940 MHz
P1dB vs. Frequency
+25 ºC
27
28
29
30
31
32
920 930 940 950 960
Frequency (MHz)
P 1 d B (d B m )
Frequency MHz 920 940 960
Gain dB 19.7 19.8 19.9
Input Return Loss dB 9.6 10.5 10.4
Output Return Loss dB 8 8.4 9
Output P1dB dBm +31.1 +31 +31.1
Channel Power(1)
@ -50 dBc WCDMA ACLR dBm +21.6 +21.7 +21.6
OIP3 (2)
@ 22 dBm / tone dBm +46.2 +47.3 +48.1
Noise Figure dB 9.3 9.2 9.3
Icq mA 300
Iref mA 30
Vcc V +5
C2
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AH225
1W High Linearity InGaP HBT Amplifier
920 - 960 MHz Application Circuit (AH225-S8PCB900)
ACLR vs. Pout vs. Temp
3GPP WCDMA, TM1+64DPCH, ±5MHz Offset, 940 MHz
-60
-55
-50
-45
-40
-35
-30
19 20 21 22 23 24 25 26
Output Channel Power (dBm)
A C L R (d B c )
-40ºC +25ºC +85ºC
ACLR vs. Pout vs. Freq
3GPP WCDMA, TM1+64DPCH, ±5MHz Offset, 25ºC
-60
-55
-50
-45
-40
-35
-30
19 20 21 22 23 24 25 26
Output Channel Power (dBm)
A C L R (d B c )
920 MHz 940 MHz 960 MHz
Noise Figure vs. Frequency
2
4
6
8
10
12
920 930 940 950 960
Frequency (MHz)
N F (dB )
-40ºC +25ºC +85ºC
OIP3 vs. Pout/Tone vs. Temp
1 MHz spacing
30
35
40
45
50
17 19 21 23
25
Pout / tone (dBm)
OIP3 (dBm)
-40ºC +25ºC +85ºC
OIP3 vs. Pout/Tone vs. Freq
1 MHz spacing, +25ºC
30
35
40
45
50
55
17 19 21 23 25
Pout / tone (dBm)
O IP 3 (d B m )
920 MHz 940 MHz
960 MHz
OIP3 vs. Frequency
1 MHz spacing, 22 dBm / tone Pout
30
35
40
45
50
55
920 930 940 950 960
Frequency (MHz)
O IP 3 (d B m )
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AH225
1W High Linearity InGaP HBT Amplifier
1805 – 1880 MHz Reference Design
Typical RF Performance at 25 ºC
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5MHz offset, PAR = 10.2 dB @ 0.01% Prob.
2. EVM Test set-up: 802.16-2004OFDMA, 64 QAM-1/2, 1024 FFT, 20 symbols, 30 subchannels.
3. OIP3 is measured at 19 dBm / tone output power with 1 MHz spacing.
4. Vref can be used as device power down voltage (low = RF off) by swapping R7 with R8.
5. L2, C5 are placed against the edge of L5 and C6 respectively.
6. The edge of C6 is placed at 80 mils from edge of AH225 RFout pin (8 º @ 1840 MHz).
7. The edge of C9 is placed at 10 mils from edge of AH225 RFout pin (1 º @ 1840 MHz).
8. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
9. Zero ohm jumpers may be replaced with copper traces in the target application layout.
10. DNP means Do Not Place.
11. L3 is critical for linearity performance.
12. FB1 (Ferrite Bead) act as inductor that avoid crosstalk between C15 and C1. Steward MI0603K300R-10.
S21 vs. Frequency
+25 ºC
12
13
14
15
16
17
1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
S 2 1 (d B )
Return Loss vs. Frequency
+25 ºC
-20
-16
-12
-8
-4
0
1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
R e t u rn L o s s (d B )
S11 S22
P1dB vs. Frequency
+25 C
26
27
28
29
30
31
1800 1820 1840 1860 1880
Frequency (MHz)
P 1 d B (d B m )
ACLR vs. Pout vs. Freq
3GPP WCDMA, TM1+64DPCH, ±5MHz Offset, +25 ºC
-60
-55
-50
-45
-40
-35
-30
19 20 21 22 23 24 25
Output Channel Power (dBm)
A C LR (d B c)
1805 MHz 1840 MHz 1880 MHz
EVM vs. Pout vs. Freq
OFDM, QAM-64, 54 Mb/s, +25 ºC
0
1
2
3
4
5
6
7
17 18 19 20 21 22 23 24
25
Pout (dBm)
E V M (% )
1805 MHz 1840 MHz 1880 MHz
OIP3 vs. Pout/tone vs. Freq
1 MHz spacing, +25 ºC
30
35
40
45
50
55
15 17 19 21 23 25
Pout/tone (dBm)
O IP 3 ( d B m )
1805 MHz
1840 MHz
1880 MHz
Frequency MHz 1805 1840 1880
Gain dB 15.1 15.1 15.1
Input Return Loss dB 12 11 10
Output Return Loss dB 9.5 10.7 12.2
Output P1dB dBm +30.8 +30.7 +30.6
Channel Power(1)
@ -50 dBc WCDMA ACLR dBm +21.7 +21.6 +21.4
Channel Power(2)
@ 2.5% EVM dBm +23.6 +23.5 +23.3
OIP3 (3)
@ 19 dBm / tone dBm +46.2 +46 +45
Noise Figure dB 5.7 5.7 5.8
Icq mA 300
Iref mA 30
Vcc V +5
C
5
L5
C9
L2
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AH225
1W High Linearity InGaP HBT Amplifier
1930 - 1990 MHz Application Circuit (AH225-S8PCB1960)
Typical RF Performance at 25 °
°°
°C
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5MHz offset, PAR = 10.2 dB @ 0.01% Prob.
2. OIP3 is measured at 19 dBm / tone output power with 1 MHz spacing.
3. Vref can be used as device power down voltage (low = RF off) by swapping R7 with R8.
4. The edge of L2 is placed at 140 mils from edge of AH225 RFin pin (14.7 º @ 1960 MHz).
5. The edge of C2 is placed at 315 mils from edge of AH225 RFout pin (33 º @ 1960 MHz).
6. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
7. Zero ohm jumpers may be replaced with copper traces in the target application layout.
8. DNP means Do Not Place.
9. C11, R2, C10 can be located next to L2 and C3 can be located next to C2 to make the design compact.
10. FB1 (Ferrite Bead) act as inductor that avoid crosstalk between C15 and C1. Steward MI0603K300R-10.
S21 vs. Frequency
12
13
14
15
16
17
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S21 (dB)
-40ºC +25ºC +85ºC
S11 vs. Frequency
-20
-16
-12
-8
-4
0
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S1 1 (d B )
-40ºC +25ºC +85ºC
S22 vs. Frequency
-20
-16
-12
-8
-4
0
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S2 2 (d B )
-40ºC +25ºC +85ºC
ACLR vs. Pout vs. Freq
3GPP WCDMA, TM1+64DPCH, ±5MHz Offset, +25ºC
-60
-55
-50
-45
-40
-35
-30
19 20 21 22 23 24 25 26
Output Channel Power (dBm)
A C L R (d B c )
1930 MHz 1960 MHz 1990 MHz
OIP3 vs. Pout/Tone vs. Freq
1 MHz spacing, +25ºC
30
35
40
45
50
55
15 17 19 21 23 25
Pout / Tone (dBm)
O IP 3 (dB m )
1930 MHz 1960 MHz 1990 MHz
OIP3 vs. Frequency
1 MHz spacing, 19 dBm / tone Pout
30
35
40
45
50
55
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
O IP 3 ( d B m )
Frequency MHz 1930 1960 1990
Gain dB 15.2 15.4 15.6
Input Return Loss dB 16 15.4 14.5
Output Return Loss dB 7 8.3 9.6
Output P1dB dBm +31.2 +31.3 +31.1
Channel Power(1)
@ -50 dBc WCDMA ACLR dBm +21.8 +21.7 +21.7
OIP3 (2)
@ 19 dBm / tone dBm +51.3 +53.6 +47.5
Noise Figure dB 5.9 5.9 6
Icq mA 300
Iref mA 30
Vcc V +5
C2
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AH225
1W High Linearity InGaP HBT Amplifier
1930 - 1990 MHz Application Circuit (AH225-S8PCB1960)
P1dB vs. Frequency
+25 C
27
28
29
30
31
32
1930 1940 1950 1960 1970 1980
1990
Frequency (MHz)
P 1 d B ( d B m )
Icc vs. Pout
3GPP WCDMA, TM1+64DPCH, ±5MHz Offset, +25ºC
320
340
360
380
400
420
19 20 21 22 23 24 25
Pout (dBm)
Ic c (m A )
1960 MHz
Noise Figure vs. Frequency
0
2
4
6
8
10
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
NF (dB)
-40ºC +25ºC +85ºC
Gain vs. Frequency vs. Bias Voltage
T=25 ºC
11
12
13
14
15
16
1.93 1.94 1.95 1.96 1.97 1.98 1.99
Frequency (GHz)
G ain (dB )
4.75 V 5 V 5.25 V
S11 vs. Frequency vs. Bias Voltage
T=25ºC
-25
-20
-15
-10
-5
0
1.93 1.94 1.95 1.96 1.97 1.98 1.99
Frequency (GHz)
S 1 1 (d B )
4.75 V 5 V 5.25 V
S22 vs. Frequency vs. Bias Voltage
T=25ºC
-25
-20
-15
-10
-5
0
1.93 1.94 1.95 1.96 1.97 1.98 1.99
Frequency (GHz)
S 2 2 (d B )
5 V 5.25 V 4.75 V
ACLR vs. Pout vs Bias Voltage
3GPP, WCDMA, TM1+64DPCH, +5MHz Offset, F=1960 MHz, +25C
-60
-55
-50
-45
-40
-35
-30
18 19 20 21 22 23 24 25
Pout (dBm)
A C L R ( d B c )
4.75 V 5 V 5.25 V
Total device current vs. Pout vs. Bias Voltage
Total device current include Icc, Iref, Ibias, F=1960 MHz, +25ºC
200
250
300
350
400
450
18 19 20 21 22 23 24 25
Pout (dBm)
D e v ic e C u r re n t (m A )
4.75 V 5 V 5.25 V
P1dB vs. Pout vs. Bias Voltage
F=1960 MHz, +25ºC
27
28
29
30
31
32
33
1.93 1.95 1.97 1.99
Pout (dBm)
P 1 d B (d B m )
4.75 V 5 V 5.25 V
OIP3 vs. Pout/Tone vs. Bias Voltage
F=1960 MHz, T=25ºC, 1MHz spacing
30
35
40
45
50
55
60
15 16 17 18 19 20 21 22 23
Output Power/Tone (dBm)
O IP 3 (d Bm)
4.75 V 5 V 5.25 V
Noise Figure vs. Bias Voltage
F=1960 MHz, +25ºC
2
3
4
5
6
4.75 4.85 4.95 5.05 5.15 5.25
Voltage (V)
N F ( d B )
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 9 of 12 August 2009
AH225
1W High Linearity InGaP HBT Amplifier
2110 - 2170 MHz Application Circuit (AH225-S8PCB2140)
Typical RF Performance at 25 °
°°
°C
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5MHz offset, PAR = 10.2 dB @ 0.01% Prob.
2. OIP3 is measured at 19 dBm / tone output power with 1 MHz spacing.
3. Vref can be used as device power down voltage (low = RF off) by swapping R7 with R8
4. The edge of L2 is placed at 225 mils from edge of AH225 RFin pin (24 º @ 2140 MHz).
5. The edge of C2 is placed at 200 mils from edge of AH225 RFout pin (23 º @ 2140 MHz).
6. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
7. Zero ohm jumpers may be replaced with copper traces in the target application layout.
8. DNP means Do Not Place.
9. C11, R2, C10 can be located next to L2 and C3 can be located next to C2 to make the design compact.
10. FB1 (Ferrite Bead) act as inductor that avoid crosstalk between C15 and C1. Steward MI0603K300R-10.
S21 vs. Frequency
12
13
14
15
16
17
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S21 (dB )
-40ºC +25ºC +85ºC
S11 vs. Frequency
-25
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S1 1 (dB )
-40ºC +25ºC +85ºC
S22 vs. Frequency
-25
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S 2 2 (dB )
-40ºC +25ºC +85ºC
Gain vs. Pout vs. Temp
Freq = 2140 MHz
13.5
14
14.5
15
15.5
16
16.5
25 26 27 28 29 30 31 32
Pout (dBm)
Gain (dB)
-40ºC +25ºC +85ºC
Icc vs. Pout
3GPP WCDMA, TM1+64DPCH, +5MHz Offset, +25ºC
300
320
340
360
380
400
17 19 21 23 25
Pout dBm)
Icc (m A )
2140 MHz
P1dB vs. Frequency
+25ºC
27
28
29
30
31
32
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
P 1d B (d B m )
Frequency MHz 2110 2140 2170
Gain dB 15.1 15.2 15.3
Input Return Loss dB 21 18 15
Output Return Loss dB 7.7 9.4 12
Output P1dB dBm +31.5 +31.1 +31
Channel Power(1)
@ -50 dBc WCDMA ACLR dBm +21.1 +21.4 +21.2
OIP3 (2)
@ 19 dBm / tone dBm +46.4 +47 +47
Noise Figure dB 6.1 6.3 6.1
Icq mA 300
Iref mA 30
Vcc V +5
C2
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 10 of 12 August 2009
AH225
1W High Linearity InGaP HBT Amplifier
2110 - 2170 MHz Application Circuit (AH225-S8PCB2140)
ACLR vs. Pout vs. Temp
3GPP WCDMA, TM1+64DPCH, ±5MHz Offset, 2140 MHz
-60
-55
-50
-45
-40
-35
-30
19 20 21 22 23 24 25 26
Output Channel Power (dBm)
AC LR (dBc)
-40ºC +25ºC +85ºC
ACLR vs. Pout vs. Freq
3GPP WCDMA, TM1+64DPCH, ±5MHz, +25ºC
-60
-55
-50
-45
-40
-35
-30
19 20 21 22 23 24 25 26
Channel Output Power (dBm)
A CLR (dB c )
2110 MHz 2140 MHz 2170 MHz
Noise Figure vs. Frequency vs. Temp
0
2
4
6
8
10
2110 2120 2130 2140 2150 2160
2170
Frequency (MHz)
NF (dB)
-40ºC +25ºC +85ºC
OIP3 vs. Pout/Tone vs. Temp
Freq = 2140, 2141 MHz, 1MHz spacing
30
35
40
45
50
55
17 19 21 23
25
Pout / Tone (dBm)
OIP 3 (dB m )
-40ºC +25ºC +85ºC
OIP3 vs. Pout/Tone vs. Freq
1 MHz spacing, +25ºC
30
35
40
45
50
55
17 19 21 23
25
Pout / Tone (dBm)
OIP3 (dB m )
2110 MHz 2140 MHz 2170 MHz
OIP3 vs. Frequency
1 MHz spacing, 19 dBm / tone Pout
30
35
40
45
50
55
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
O IP 3 (d B m )
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 11 of 12 August 2009
AH225
1W High Linearity InGaP HBT Amplifier
AH225 2500 – 2700 MHz Reference Design
Typical RF Performance at 25 °
°°
°C
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset, PAR = 10.2 dB @ 0.01% Prob.
2. EVM Test set-up: 802.16-2004OFDMA, 64 QAM-1/2, 1024 FFT, 20 symbols, 30 subchannels.
3. OIP3 is measured at 19 dBm / tone output power with 1 MHz spacing.
4. Vref can be used as device power down voltage (low = RF off) by swapping R7 with R8
5. The edge of C6 is placed at 70 mils from edge of AH225 RFin pin (9.5 º @ 2600 MHz).
6. The edge of R5 is placed at 10 mils from edge of AH225 RFout pin (1.5 º @ 2600 MHz).
7. The edge of C9 is placed at 10 mils from edge of R5 (1.5 º @ 2600 MHz).
8. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
9. Zero ohm jumpers may be replaced with copper traces in the target application layout.
10. DNP means Do Not Place.
11. L3 is critical for linearity performance.
12. FB1 (Ferrite Bead) act as inductor that avoid crosstalk between C15 and C1. Steward MI0603K300R-10.
S21 vs. Frequency
+25 ºC
10
11
12
13
14
15
2400 2450 2500 2550 2600 2650 2700
Frequency (MHz)
G a in (d B )
Return Loss vs. Frequency
+25 ºC
-25
-20
-15
-10
-5
0
2400 2500 2600 2700 2800
Frequency (MHz)
R e tu rn L o s s (d B )
S11 S22
P1dB vs. Frequency
+25 C
26
27
28
29
30
31
2500 2550 2600 2650
2700
Frequency (MHz)
P 1 d B (d B m )
ACLR vs. Pout vs. Freq
3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset, 25 ºC
-60
-55
-50
-45
-40
-35
-30
19 20 21 22 23 24 25 26
Pout (dBm)
A C L R (d B c )
2500 MHz 2600 MHz 2700 MHz
EVM vs. Pout vs. Freq
OFDM, QAM-64, 54 Mb/s
0
1
2
3
4
5
6
7
17 18 19 20 21 22 23 24 25
Pout (dBm)
E V M (% )
2500 MHz
2600 MHz
2700 MHz
OIP3 vs. Pout/tone vs. Freq
1 MHz spacing, +25 ºC
30
35
40
45
50
55
17 19 21 23 25
Pout/tone (dBm)
O IP 3 (d B m )
2500 MHz 2600 MHz 2700 MHz
Frequency MHz 2500 2600 2700
Gain dB 12.9 13.2 12.8
Input Return Loss dB 13.3 19.4 15.8
Output Return Loss dB 5.1 5.5 6.4
Output P1dB dBm +30.4 +30.5 +30.2
Channel Power(1)
@ -50 dBc WCDMA ACLR dBm +21.3 +21.3 +20.9
Channel Power(2)
@ 2.5% EVM dBm +23 +23 +22.7
OIP3 (3)
@ 19 dBm / tone dBm +50 +48.7 +44.8
Icq mA 300
Iref mA 30
Vcc V +5
C5
0
R5
1.5
pF
L2
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 12 of 12 August 2009
AH225
1W High Linearity InGaP HBT Amplifier
Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes.
Outline Drawing
Mounting Configuration / Land Pattern
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the
device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill
and have a final plated thru diameter of .25 mm (.010”).
3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contact the
heatsink.
5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and construction.
7. Use 1 oz. Copper minimum.
8. All dimensions are in millimeters (inches). Angles are in degrees.
Product Marking
The AH225 will be marked with an “AH225G”
designator with a lot code marked below the part
designator. The “Y” represents the last digit of
the year the part was manufactured, the
“XXXX” is an auto-generated number, and “Z”
refers to a wafer number in a lot batch.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1C
Value: Passes ≥ 1000V min.
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22A114-E
ESD Rating: Class IV
Value: Passes ≥ 1000V min.
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22C101-C
MSL Rating: Level 2 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Functional Diagram
Function Pin No.
Iref 8
RFin 3
Vcc / RFout 6, 7
Vbias 1
GND Backside Paddle
N/C or GND 2, 4, 5
1
2
3
4
8
7
6
5
