DIM75HST12-B000 DIM75HST12-B000 Trench Gate IGBT Module Preliminary Information Replaces June 2001, version DS5350-2.0 FEATURES Trench Gate Enhancement Mode n-Channel Device Non Punch Through Structure High Switching Speed Low On-state Saturation Voltage High Input Impedance Simplifies Gate Drive Latch-Free Operation Fully Short Circuit Rated To 10s Wide RBSOA DS5350-3.0 July 2001 KEY PARAMETERS VCES (max) VCE(sat) (typ) IC25 (max) (max) IC75 ICM (max) tsc (max) 1200V 1.9V 109A 75A 225A 10s H I JKL M N APPLICATIONS High Frequency Inverters Motor Control Switched Mode Power Supplies High Frequency Welding UPS Systems PWM Drives The DIM75HST12-B000 is a robust non punch through trench gate n-channel, enhancement mode insulated gate bipolar transistor (IGBT) module designed for low power dissipation in a wide range of low to medium voltage applications such as power supplies and motor drives. Trench Gate technology offers significant improvements when compared with conventional planar IGBTs. The high impedance gate simplifies gate drive considerations, allowing operation directly from low power control circuitry. Low saturation voltages minimise power dissipation, thereby reducing the running cost of the overall system in which they are used. 7 8 1 2 3 4 A B CDE F G Outline type code: H (ECO-PAC) (See Package Details for further information) Fig.1 Pin connections - top view (not to scale) I L N H J M The DIM75HST12-B000 is fully short circuit rated making it especially suited for motor control and other arduous applications. Typical applications include high frequency inverters for motor control, PWM, welding and heating apparatus. The Powerline range of IGBTs is also applicable to switched mode and uninterruptible power supplies. 5 6 A NTC B E G Fig.2 DIM75HST12-B000 circuit ORDERING INFORMATION Order as: DIM75HST12-B000 Note: When ordering use complete part number. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/11 DIM75HST12-B000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. Tcase = 25C unless stated otherwise. Symbol Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage IC25 Continuous collector current IC75 Test Conditions Max. Units VGE = 0V 1200 V 20 V Tcase = 25C 109 A Continuous collector current Tcase = 75C 75 A ICM Pulsed collector current 1ms, Tcase = 75C 225 A Ptot Power dissipation Tcase = 75C 136 W Visol Isolating voltage Iisol 1mA, 50/60Hz, t = 1 min 3000 Vac - THERMAL AND MECHANICAL RATINGS Symbol Parameter Conditions Min. Max. Units Rth(j-c) Thermal resistance - IGBT DC junction to case - 0.55 C/W Rth(j-c) Thermal resistance - Diode DC junction to case - 1.33 C/W Tj Tstg - 2/11 Operating junction temperature range - -40 150 C Storage temperature range - -40 150 C 1.5 2.0 Nm Mounting torque M4 Screw Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM75HST12-B000 DC ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise. Symbol Min. Typ. Max. Units VGE = 0V, VCE = 1200V - - 0.6 mA VGE = 0V, VCE = 1200V, Tc = 125C - - 3 mA Gate leakage current VGE = 20V, VCE = 0V - - 1.5 A VGE(TH) Gate threshold voltage IC = 1mA, VCE = VGE - 7 - V VCE(SAT) Collector-emitter saturation voltage VGE = 15V, IC = 75A - 1.9 2.3 V VGE = 15V, IC = 75A, Tc = 125C - 2.1 - V Conditions Min. Typ. ICES IGES Parameter Collector cut-off current Conditions AC ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise. Symbol Parameter Max. Units Cies Input capacitance VCE = 75V, VGE = 15V, f = 1MHz - 12000 - pF Coes Output capacitance VCE = 75V, VGE = 15V, f = 1MHz - 510 - pF Cres Reverse transfer capacitance VCE = 75V, VGE = 15V, f = 1MHz - 75 - pF Conditions Min. Typ. - - SHORT CIRCUIT RATING Tcase = 125C unless stated otherwise. Parameter Symbol tsc Short circuit withstand time VGE = 15V, VCE = 80% VCES Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Max. Units 10 s 3/11 DIM75HST12-B000 INDUCTIVE SWITCHING CHARACTERISTICS Tcase = 25C unless stated otherwise. Symbol td(ON) tr EON td(OFF) tf EOFF Parameter Conditions Min. Typ. - 160 - ns IC = 75A - 15 - ns VGE = 15V, - 4.6 - mJ - 270 - ns - 40 - ns - 7.5 - mJ Min. Typ. - 170 - ns IC = 75A - 17 - ns VGE = 15V, - 6 - mJ - 340 - ns - 60 - ns - 10.5 - mJ Min. Typ. Max. Units At IF = 75A peak - 1.9 - V At IF = 75A peak, Tcase = 125C - 1.92 - V Reverse recovery time IF = 75A, diRR /dt = 600A/s - 90 - ns Reverse recovery current VR = 50%VRRM - 36 - A Turn-on delay time Rise time Turn-on energy loss - per cycle Turn-off delay time VCE = 50%Vces Fall time Max. Units RG = 1.67 Turn-off energy loss - per cycle Tcase = 125C unless stated otherwise. Symbol td(ON) tr EON td(OFF) tf EOFF Parameter Conditions Turn-on delay time Rise time Turn-on energy loss - per cycle Turn-off delay time VCE = 50%Vces Fall time Max. Units RG = 1.67 Turn-off energy loss - per cycle DIODE CHARACTERISTICS Tc = 25C unless stated otherwise. Symbol VFM trr IRRM 4/11 Parameter Forward voltage Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM75HST12-B000 BASIC TEST CIRCUIT VCC 500F DUT Fig.3 Basic d.c. chopper circuit SWITCHING DEFINITIONS +15V 0V VGE -15V tr = t3 - t2 td(on) = t2 - t1 1s 90% t3 + 1s Eon = V . IC dt CE IC 10% VCE t1 t5 t6 t7 t8 Fig.4 Turn-on characteristics Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/11 DIM75HST12-B000 +15V 0V VGE -15V tf = t7 - t6 td(off) = t6 - t5 1s 90% t7 + 1s V Eoff = CE . IC dt IC 10% t5 VCE t5 t7 t6 t8 Fig.5 Turn-off characteristics Curves 240 180 Vge = 15 V 210 150 Collector current, IC - (A) Collector current, IC - (A) 180 120 150 Tcase = 25C 120 Tcase = 125C 90 Tcase = 25C 90 Tcase = 125C 60 60 30 30 0 0 0 0.5 1 1.5 2 2.5 3 3.5 Collector-emitter saturation voltage, Vce(sat) - (V) Fig.6 Typical output characteristics 6/11 4 4.5 6 8 10 12 Gate-emitter voltage, Vge - (V) 14 Fig.7 Typical transfer characteristics Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM75HST12-B000 450 30 Conditions: Tcase = 125C VCC = 600V VGE = 15V Rg = 1.67 td(off) 400 EON 350 21 18 15 EOFF 12 Switching time - (ns) Switching energy, Esw - (mJ) Conditions: = 125C, T 27 case VCC = 600V, VGE = 15V, 24 R = 1.67 G 300 250 200 td(on) 150 9 tf 100 6 50 2 tr 0 0 30 60 90 Collector current, IC - (A) 120 0 150 0 Fig.8 Typical switching losses vs collector current 60 90 Collector current, IC - (A) 120 150 Fig.9 Typical switching times vs collector current 30 700 Conditions: Tcase = 125C VCC = 600V, VGE = 15V, IC = 75A 27 24 Conditions: Tcase = 125C 600 VCC = 600V, VGE = 15V, IC = 75A 500 21 Switching time - (ns) Switching energy - Esw - (mJ) 30 18 15 12 EOFF 9 400 td(off) 300 200 EON td(on) 6 100 3 tf 0 0 4 8 12 Gate Resistance, Rg - () 16 Fig.10 Typical switching losses vs gate resistance tr 0 0 4 8 16 Fig.11 Typical switching times vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 12 Gate resistance, Rg - () 7/11 DIM75HST12-B000 400 12.0 Conditions: VCC = 600V, VGE = 15V, IC = 75A, RG = 1.67 9.0 350 300 EOFF Switching time - (ns) Switching energy, Esw - (mJ) 10.5 7.5 6.0 EON 4.5 200 td(on) 150 100 1.5 50 0 0 20 40 60 80 100 Case temperature, Tcase - (C) 120 td(off) 250 3.0 0 Conditions: VCC = 600V, VGE = 15V, IC = 75A, RG = 1.67 tf tr 0 140 20 40 60 80 100 120 140 Case temperature, Tcase - (C) Fig.12 Typical switching losses vs case temperature 6000 Fig.13 Typical switching times vs case temperature 18 Conditions: Vge = 0V f = 1Mhz Conditions: IC = 75A Vce = 600V Ig = 40mA 16 5000 Gate-emitter voltage, Vge - (V) Capacitance, C - (pF) 14 4000 12 10 3000 Cres Coes Cies 2000 8 6 4 1000 2 0 0 0 5 10 15 20 25 30 35 40 45 50 Collector-emitter voltage, Vce - (V) Fig.14 Typical capacitance 8/11 55 60 0 60 120 180 240 300 360 420 480 540 600 660 720 Gate charge, Qg - (nC) Fig.15 Typical gate charge Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM75HST12-B000 180 80 70 Diode forward current, IF - (A) 150 Collector current, IC - (A) 60 120 50 40 30 20 200 60 Tj = 25C 0 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 Diode forward voltage, VF - (A) 0 0 Tj = 125C 30 Conditions: Tcase = 125C Vge = 15V Rg = 8 10 90 400 600 800 1000 1200 Collector-emitter voltage, Vce - (V) 1400 Fig.16 Reverse bias safe operating area 160 PWM Sine Wave. Power Factor = 0.9, Modulation Index = 1 120 100 120 DC collector current, IC - (A) Inverter phase current, IC(PK) - (A) 140 Fig.17 Diode typical forward characteristics 100 80 60 40 20 Conditions: Tj = 125C, Tc = 75C, Rg = 1.67, VCC = 600V 0 1 fmax - (kHz) 80 60 40 20 10 Fig.18 3-Phase PWM inverter operating frequency 30 0 0 20 40 60 80 100 120 Case temperature, Tcase - (C) 160 Fig.19 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 140 9/11 DIM75HST12-B000 PACKAGE DETAILS For additional package information, please contact your nearest representative or Dynex Semiconductor Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 8.60.3 8.60.3 7.30.3 1 2 3 4 30.30.2 7 8 27.40.1 5 6 21.60.3 O4.3 I JKL M N 17.80.3 H O1 A B CDE F G 3.70.3 2.90.3 8 1 20.30.5 8.60.3 8.60.3 39 470.2 Package outline type: H (ECO-PAC) 10/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM75HST12-B000 http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS5350-3 Issue No. 3.0 July 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 11/11