DIM75HST12-B000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11
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FEATURES
■Trench Gate
■Enhancement Mode n-Channel Device
■Non Punch Through Structure
■High Switching Speed
■Low On-state Saturation Voltage
■High Input Impedance Simplifies Gate Drive
■Latch-Free Operation
■Fully Short Circuit Rated To 10µs
■Wide RBSOA
APPLICATIONS
■High Frequency Inverters
■Motor Control
■Switched Mode Power Supplies
■High Frequency Welding
■UPS Systems
■PWM Drives
The DIM75HST12-B000 is a robust non punch through
trench gate n-channel, enhancement mode insulated gate
bipolar transistor (IGBT) module designed for low power
dissipation in a wide range of low to medium voltage
applications such as power supplies and motor drives.
Trench Gate technology offers significant improvements
when compared with conventional planar IGBTs. The high
impedance gate simplifies gate drive considerations,
allowing operation directly from low power control circuitry.
Low saturation voltages minimise power dissipation,
thereby reducing the running cost of the overall system in
which they are used.
The DIM75HST12-B000 is fully short circuit rated
making it especially suited for motor control and other
arduous applications.
Typical applications include high frequency inverters
for motor control, PWM, welding and heating apparatus.
The Powerline range of IGBTs is also applicable to
switched mode and uninterruptible power supplies.
Fig.2 DIM75HST12-B000 circuit
Outline type code: H (ECO-PAC)
(See Package Details for further information)
Fig.1 Pin connections - top view (not to scale)
N
H
J
M
IL
ABE
G
NTC
KEY PARAMETERS
VCES (max) 1200V
VCE(sat) (typ) 1.9V
IC25 (max) 109A
IC75 (max) 75A
ICM (max) 225A
tsc (max) 10µs
ORDERING INFORMATION
Order as:
DIM75HST12-B000
Note: When ordering use complete part number.
DIM75HST12-B000
Trench Gate IGBT Module
Preliminary Information
Replaces June 2001, version DS5350-2.0 DS5350-3.0 July 2001
ABCEDGF
HIJLKNM
5768
1324
DIM75HST12-B000
2/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Continuous collector current
Pulsed collector current
Power dissipation
Isolating voltage
Symbol
Rth(j-c)
Rth(j-c)
Tj
Tstg
-
Symbol
VCES
VGES
IC25
IC75
ICM
Ptot
Visol
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
Tcase = 25˚C unless stated otherwise.
THERMAL AND MECHANICAL RATINGS
Conditions
DC junction to case
DC junction to case
-
-
M4 Screw
Min.
-
-
–40
–40
1.5
Parameter
Thermal resistance - IGBT
Thermal resistance - Diode
Operating junction temperature range
Storage temperature range
Mounting torque
Test Conditions
VGE = 0V
-
Tcase = 25˚C
Tcase = 75˚C
1ms, Tcase = 75˚C
Tcase = 75˚C
Iisol ≤ 1mA, 50/60Hz, t = 1 min
Units
V
V
A
A
A
W
Vac
Max.
1200
±20
109
75
225
136
3000
Max.
0.55
1.33
150
150
2.0
Units
˚C/W
˚C/W
˚C
˚C
Nm
DIM75HST12-B000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/11
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DC ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
ICES
IGES
VGE(TH)
VCE(SAT)
Conditions
VGE = 0V, VCE = 1200V
V
GE
= 0V, V
CE
=
1200
V, T
c
= 125˚C
VGE = 20V, VCE = 0V
IC = 1mA, VCE = VGE
VGE = 15V, IC = 75A
VGE = 15V, IC = 75A, Tc = 125˚C
Max.
0.6
3
1.5
-
2.3
-
Typ.
-
-
-
7
1.9
2.1
Min.
-
-
-
-
-
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Units
mA
mA
µA
V
V
V
AC ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Symbol
Cies
Coes
Cres
Conditions
VCE = 75V, VGE = 15V, f = 1MHz
VCE = 75V, VGE = 15V, f = 1MHz
VCE = 75V, VGE = 15V, f = 1MHz
Max.
-
-
-
Typ.
12000
510
75
Min.
-
-
-
Units
pF
pF
pF
SHORT CIRCUIT RATING
Tcase = 125˚C unless stated otherwise.
VGE = 15V, VCE = 80% VCES 10Short circuit withstand timetsc µs
--
Parameter
Symbol Conditions Max.Typ.Min. Units
DIM75HST12-B000
4/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIODE CHARACTERISTICS
Tc = 25˚C unless stated otherwise.
Symbol
Forward voltage
Conditions
V
Max.
1.9
Typ.
-
Min.Parameter Units
VFM
trr --Reverse recovery time IF = 75A, diRR /dt = 600A/µsns
IRRM --Reverse recovery current VR = 50%VRRM A
At IF = 75A peak
90
36
-
V1.92-At IF = 75A peak, Tcase = 125˚C -
INDUCTIVE SWITCHING CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
td(ON)
tr
EON
td(OFF)
tf
EOFF
Conditions
IC = 75A
VGE = ±15V,
VCE = 50%Vces
RG = 1.67Ω
Parameter
Turn-on delay time
Rise time
Turn-on energy loss - per cycle
Turn-off delay time
Fall time
Turn-off energy loss - per cycle
Min.
-
-
-
-
-
-
Typ.
160
15
4.6
270
40
7.5
Tcase = 125˚C unless stated otherwise.
Max.
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
Symbol
td(ON)
tr
EON
td(OFF)
tf
EOFF
Conditions
IC = 75A
VGE = ±15V,
VCE = 50%Vces
RG = 1.67Ω
Parameter
Turn-on delay time
Rise time
Turn-on energy loss - per cycle
Turn-off delay time
Fall time
Turn-off energy loss - per cycle
Min.
-
-
-
-
-
-
Typ.
170
17
6
340
60
10.5
Max.
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
DIM75HST12-B000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/11
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V
CC
500µF
DUT
SWITCHING DEFINITIONS
Fig.3 Basic d.c. chopper circuit
90%
10%
0V
-15V
+15V
V
GE
I
C
V
CE
t
5
t
6
t
7
t
8
1µs
Fig.4 Turn-on characteristics
BASIC TEST CIRCUIT
tr = t3 - t2
td(on) = t2 - t1
Eon = ∫ VCE. IC dt
t3 + 1µs
t1
DIM75HST12-B000
6/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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90%
10%
0V
-15V
+15V
V
GE
I
C
V
CE
t
5
t
6
t
7
t
8
1s
Fig.5 Turn-off characteristics
tf = t7 - t6
td(off) = t6 - t5
Eoff = ∫ VCE. IC dt
t7 + 1µs
t5
Curves
Fig.6 Typical output characteristics Fig.7 Typical transfer characteristics
0
30
60
90
120
150
180
210
240
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Collector-emitter saturation voltage, V
ce(sat)
- (V)
Collector current, I
C
- (A)
V
ge
= 15 V
T
case
= 25°C
T
case
= 125°C
0
30
60
90
120
150
180
6 8 10 12 14
Gate-emitter voltage, Vge - (V)
Collector current, IC - (A)
Tcase = 25°C
Tcase = 125°C
DIM75HST12-B000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/11
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Fig.10 Typical switching losses vs gate resistance Fig.11 Typical switching times vs gate resistance
0
3
6
9
12
15
18
21
24
27
30
0481216
Gate Resistance, R
g
- (Ω)
Switching energy - E
sw
- (mJ)
E
ON
E
OFF
Conditions:
T
case
= 125˚C
V
CC
= 600V,
V
GE
= 15V,
I
C
= 75A
0
100
200
300
400
500
600
700
0481216
Gate resistance, R
g
- (Ω)
Switching time - (ns)
t
d(on)
t
d(off)
t
f
t
r
Conditions:
T
case
= 125˚C
V
CC
= 600V,
V
GE
= 15V,
I
C
= 75A
Fig.8 Typical switching losses vs collector current Fig.9 Typical switching times vs collector current
0
2
6
9
12
15
18
21
24
27
30
0 30 60 90 120 150
Collector current, IC - (A)
Switching energy, Esw - (mJ)
Conditions:
Tcase = 125˚C,
VCC = 600V,
VGE = 15V,
RG = 1.67Ω
EOFF
EON
0
50
100
150
200
250
300
350
400
450
0 30 60 90 120 150
Collector current, I
C
- (A)
Switching time - (ns)
Conditions:
T
case
= 125°C
V
CC
= 600V
V
GE
= 15V
R
g
= 1.67Ω
t
d(on)
t
r
t
d(off)
t
f
DIM75HST12-B000
8/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig.12 Typical switching losses vs case temperature Fig.13 Typical switching times vs case temperature
0
1.5
3.0
4.5
6.0
7.5
9.0
10.5
12.0
0 20 40 60 80 100 120 140
Case temperature, T
case
- (°C)
Switching energy, E
sw
- (mJ)
E
ON
E
OFF
Conditions:
V
CC
= 600V,
V
GE
= 15V,
I
C
= 75A,
R
G
= 1.67Ω
0
50
100
150
200
250
300
350
400
0 20 40 60 80 100 120 140
Case temperature, T
case
- (°C)
Switching time - (ns)
t
d(on)
t
d(off)
t
f
t
r
Conditions:
V
CC
= 600V,
V
GE
= 15V,
I
C
= 75A,
R
G
= 1.67Ω
Fig.14 Typical capacitance Fig.15 Typical gate charge
0
2
4
6
8
10
12
14
16
18
0 60 120 180 240 300 360 420 480 540 600 660 720
Gate charge, Q
g
- (nC)
Gate-emitter voltage, V
ge
- (V)
Conditions:
I
C
= 75A
V
ce
= 600V
I
g
= 40mA
0
1000
2000
3000
4000
5000
6000
0 5 10 15 20 25 30 35 40 45 50 55 60
Collector-emitter voltage, V
ce
- (V)
Capacitance, C - (pF)
C
res
C
oes
C
ies
Conditions:
V
ge
= 0V
f = 1Mhz
DIM75HST12-B000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/11
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Fig.17 Diode typical forward characteristics
Fig.18 3-Phase PWM inverter operating frequency
0
30
60
90
120
150
180
1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4
Diode forward current, I
F
- (A)
Diode forward voltage, V
F
- (A)
T
j
= 125˚C
T
j
= 25˚C
0
20
40
60
80
100
120
0 20 40 60 80 100 120 140 160
Case temperature, T
case
- (˚C)
DC collector current, I
C
- (A)
Fig.19 DC current rating vs case temperature
0
20
40
60
80
100
120
140
160
11030
f
max
- (kHz)
Inverter phase current, I
C(PK)
- (A)
PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1
Conditions:
T
j
= 125°C, T
c
= 75°C,
R
g
= 1.67Ω, V
CC
= 600V
Fig.16 Reverse bias safe operating area
0
10
20
30
40
50
60
70
80
0 200 400 600 800 1000 1200 1400
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
Conditions:
T
case
= 125°C
V
ge
= 15V
R
g
= 8Ω
DIM75HST12-B000
10/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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PACKAGE DETAILS
For additional package information, please contact your nearest representative or Dynex Semiconductor Customer
Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
ABCEDGF
HIJLKNM
5768
1324
8.6±0.3 8.6±0.37.3±0.3
17.8±0.3
21.6±0.3
27.4±0.1
30.3±0.2
20.3±0.5
Ø4.3
Ø1
8.6±0.3
2.9±0.3
8
1
3.7±0.3
8.6±0.3
39
47±0.2
Package outline type: H (ECO-PAC)
DIM75HST12-B000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 11/11
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5350-3 Issue No. 3.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
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Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
