BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz PNP PNP Version 2010-06-23 Power dissipation Verlustleistung 0.1 CBE min 12.5 4.6 0.1 4.6 2 x 1.27 625 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Special packaging bulk Sonder-Lieferform Schuttgut Dimensions - Mae [mm] Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) BC327 BC328 Collector-Emitter-volt. - Kollektor-Emitter-Spannung E-B short - VCES 50 V 30 V Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCEO 45 V 25 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5V Power dissipation - Verlustleistung Ptot 625 mW 1) Collector current - Kollektorstrom (dc) - IC 800 mA Peak Collector current - Kollektor-Spitzenstrom - ICM 1A Base current - Basisstrom - IB 100 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. DC current gain - Kollektor-Basis-Stromverhaltnis 2) - VCE = 1 V, - IC = 100 mA Group -16 Group -25 Group -40 hFE hFE hFE 100 160 250 160 250 400 250 400 630 - VCE = 1 V, - IC = 300 mA Group -16 Group -25 Group -40 hFE hFE hFE 60 100 170 130 200 320 - - - - - 0.7 V Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) - IC = 500 mA, - IB = 50 mA 1 2 - VCEsat Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BC327-xBK / BC328-xBK Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. - VBE - - 1.2 V Base-Emitter-voltage - Basis-Emitter-Spannung 2) - VCE = 1 V, - IC = 300 mA, Collector-Emitter cutoff current - Kollektor-Emitter-Reststrom - VCE = 45 V, (B-E short) - VCE = 25 V, (B-E short) BC327 BC328 - ICES - ICES - - 2 nA 2 nA 100 nA 100 nA - VCE = 45 V, Tj = 125C, (B-E short) - VCE = 25 V, Tj = 125C, (B-E short) BC327 BC328 - ICES - ICES - - - - 10 A 10 A fT - 100 MHz - CCBO - 12 pF - Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft < 200 K/W 1) RthA Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren BC337 / BC338 Available current gain groups per type Lieferbare Stromverstarkungsgruppen pro Typ BC327-16 BC327-25 BC327-40 BC328-16 BC328-25 BC328-40 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature ) 1 Verlustleistung in Abh. von d. Umgebungstemp. ) 1 2 1 2 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG