TLH.42.. TELEFUNKEN Semiconductors High Efficiency LED, o 3 mm Tinted Undiffused Package Color High efficiency red Soft orange Yellow Green Pure green Type TLHR42.. TLHO42.. TLHY42.. TLHG42.. TLHP42.. Description Technology GaAsP on GaP GaAsP on GaP GaAsP on GaP GaP on GaP GaP on GaP Angle of Half Intensity o 22 94 8488 The TLH.42.. series was developed for standard applications like general indicating and lighting purposes. It is housed in a 3 mm tinted clear plastic package. The wide viewing angle of these devices provides a high onoff contrast. Several selection types with different luminous intensities are offered. All LEDs are categorized in luminous intensity groups. The green and yellow LEDs are categorized additionally in wavelength groups. That allows users to assemble LEDs with uniform appearance. Features D D D D D D D Choice of five bright colors Standard T-1 package Small mechanical tolerances Suitable for DC and high peak current Wide viewing angle Luminous intensity categorized Yellow and green color categorized Applications Status lights OFF / ON indicator Background illumination Readout lights Maintenance lights Legend light Rev. A1: 01.06.1995 1 (10) TLH.42.. TELEFUNKEN Semiconductors Absolute Maximum Ratings Tamb = 25C, unless otherwise specified TLHR42.. ,TLHO42.. ,TLHY42.. ,TLHG42.. ,TLHP42.. Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Test Conditions tp 10 ms Tamb 60C t 5 s, 2 mm from body Thermal resistance junction/ambient Type Symbol VR IF IFSM PV Tj Tamb Tstg Tsd Value 6 30 1 100 100 -20 to +100 -55 to +100 260 Unit V mA A mW C C C C RthJA 400 K/W Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified High efficiency red (TLHR42.. ) Parameter Luminous intensity y Test Conditions IF = 10 mA,, IVmin/IVmax 0.5 Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz Type Symbol TLHR4200 IV TLHR4201 IV TLHR4205 IV ld lp VF VR Cj Min 4 6.3 10 612 Type Symbol TLHO4200 IV ld lp VF IR Cj Min 4 598 6 Typ 8 10 15 Max 625 635 22 2 15 50 3 Unit mcd mcd mcd nm nm deg V V pF Soft orange (TLHO42.. ) Parameter Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse current Junction capacitance 2 (10) Test Conditions IF = 10 mA, IVmin/IVmax 0.5 IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA VR = 6 V VR = 0, f = 1 MHz Typ 10 Max 611 605 22 2.4 50 3 10 Unit mcd nm nm deg V mA pF Rev. A1: 01.06.1995 TLH.42.. TELEFUNKEN Semiconductors Yellow (TLHY42.. ) Parameter Luminous intensity y Test Conditions IF = 10 mA,, IVmin/IVmax 0.5 Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz Type Symbol TLHY4200 IV TLHY4201 IV TLHY4205 IV ld lp VF VR Cj Min 4 6.3 10 581 Type Symbol TLHG4200 IV TLHG4201 IV TLHG4205 IV ld lp VF VR Cj Min 6.3 10 16 562 Type TLHP4200 Min 2.5 555 6 Typ 10 15 20 Max 594 585 22 2.4 15 50 3 Unit mcd mcd mcd nm nm deg V V pF Green (TLHG42.. ) Parameter Luminous intensity y Test Conditions IF = 10 mA,, IVmin/IVmax 0.5 Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz 6 Typ 10 15 20 Max 575 565 22 2.4 15 50 3 Unit mcd mcd mcd nm nm deg V V pF Pure green (TLHP42.. ) Parameter Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance Rev. A1: 01.06.1995 Test Conditions IF = 10 mA, IVmin/IVmax 0.5 IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz Symbol IV ld lp VF VR Cj 6 Typ 7 Max 565 555 22 2.4 15 50 3 Unit mcd nm nm deg V V pF 3 (10) TLH.42.. TELEFUNKEN Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 0 Iv rel - Relative Luminous Intensity PV - Power Dissipation ( mW ) 125 100 75 50 25 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) 95 10904 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10041 Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Rel. Luminous Intensity vs. Angular Displacement 1000 60 High Efficiency Red IF - Forward Current ( mA ) IF - Forward Current ( mA ) 50 40 30 20 100 tp/T=0.001 tp=10ms 10 1 10 0.1 0 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) 95 10905 0 1000 tp/T=0.01 0.02 100 1 1 0.01 95 10047 0.5 0.2 0.1 1 10 1.2 0.8 0.4 100 tp - Pulse Length ( ms ) Figure 3. Forward Current vs. Pulse Length 4 (10) 10 High Efficiency Red IF=10mA 0 0.1 8 1.6 v65C 0.05 10 6 Figure 5. Forward Current vs. Forward Voltage Iv rel - Relative Luminous Intensity IF - Forward Current ( mA ) Tamb 4 VF - Forward Voltage ( V ) 95 10026 Figure 2. Forward Current vs. Ambient Temperature 10000 2 0 95 10027 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 6. Rel. Luminous Intensity vs. Ambient Temperature Rev. A1: 01.06.1995 TLH.42.. TELEFUNKEN Semiconductors 100 High Efficiency Red Soft Orange 2.0 IF - Forward Current ( mA ) Iv rel - Relative Luminous Intensity 2.4 1.6 1.2 0.8 10 1 0.4 0 95 10321 0.1 10 20 50 1 0.5 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T 0 Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 3 4 5 2.0 Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity 2 VF - Forward Voltage ( V ) Figure 10. Forward Current vs. Forward Voltage 10 High Efficiency Red 1 0.1 Soft Orange 1.6 1.2 0.8 0.4 0.01 0 1 100 10 IF - Forward Current ( mA ) 95 10029 0 40 60 80 100 Figure 11. Rel. Luminous Intensity vs. Ambient Temperature 2.4 Iv rel - Relative Luminous Intensity 1.2 High Efficiency Red 1.0 0.8 0.6 0.4 0.2 0 590 20 Tamb - Ambient Temperature ( C ) 95 9994 Figure 8. Relative Luminous Intensity vs. Forward Current Iv rel - Relative Luminous Intensity 1 95 9990 Soft Orange 2.0 1.6 1.2 0.8 0.4 0 610 95 10040 630 650 670 690 l - Wavelength ( nm ) Figure 9. Relative Luminous Intensity vs. Wavelength Rev. A1: 01.06.1995 95 10259 10 20 50 1 0.5 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 5 (10) TLH.42.. TELEFUNKEN Semiconductors 1.6 Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity 10 Soft Orange 1 0.1 Yellow 1.2 0.8 0.4 0.01 1 100 10 IF - Forward Current ( mA ) 95 9997 0 Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity 60 80 100 2.4 Soft Orange 1.0 0.8 0.6 0.4 0.2 0 570 Yellow 2.0 1.6 1.2 0.8 0.4 0 590 610 630 650 670 l - Wavelength ( nm ) 95 10324 95 10260 Figure 14. Relative Luminous Intensity vs. Wavelength 10 20 50 1 0.5 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 10 Iv rel - Relative Luminous Intensity 1000 IF - Forward Current ( mA ) 40 Figure 16. Rel. Luminous Intensity vs. Ambient Temperature 1.2 Yellow 100 tp/T=0.001 tp=10ms 10 1 0.1 Yellow 1 0.1 0.01 0 2 4 6 8 10 VF - Forward Voltage ( V ) Figure 15. Forward Current vs. Forward Voltage 6 (10) 20 Tamb - Ambient Temperature ( C ) 95 10031 Figure 13. Relative Luminous Intensity vs. Forward Current 95 10030 IF=10mA 0 1 95 10033 100 10 IF - Forward Current ( mA ) Figure 18. Relative Luminous Intensity vs. Forward Current Rev. A1: 01.06.1995 TLH.42.. TELEFUNKEN Semiconductors 2.4 Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity 1.2 Yellow 1.0 0.8 0.6 0.4 0.2 0 550 Green 2.0 1.6 1.2 0.8 0.4 0 570 590 610 630 650 l - Wavelength ( nm ) 95 10039 95 10263 Figure 19. Relative Luminous Intensity vs. Wavelength Iv rel - Relative Luminous Intensity IF - Forward Current ( mA ) 50 0.5 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T 10 Green 100 10 tp/T=0.001 tp=10ms 1 0.1 Green 1 0.1 0.01 0 2 4 6 8 10 VF - Forward Voltage ( V ) 95 10034 1 100 10 IF - Forward Current ( mA ) 95 10037 Figure 20. Forward Current vs. Forward Voltage Figure 23. Relative Luminous Intensity vs. Forward Current 1.6 1.2 Green Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity 20 1 Figure 22. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 1000 1.2 0.8 0.4 Green 1.0 0.8 0.6 0.4 0.2 IF=10mA 0 0 95 10035 10 20 40 60 80 Tamb - Ambient Temperature ( C ) Figure 21. Rel. Luminous Intensity vs. Ambient Temperature Rev. A1: 01.06.1995 0 520 100 95 10038 540 560 580 600 620 l - Wavelength ( nm ) Figure 24. Relative Luminous Intensity vs. Wavelength 7 (10) TLH.42.. TELEFUNKEN Semiconductors 10 Iv rel - Relative Luminous Intensity 100 IF - Forward Current ( mA ) Pure Green 10 1 0.1 1 0.1 0.01 0 1 2 3 4 5 VF - Forward Voltage ( V ) 95 9988 1 100 10 IF - Forward Current ( mA ) 95 9998 Figure 25. Forward Current vs. Forward Voltage Figure 28. Relative Luminous Intensity vs. Forward Current 1.2 Iv rel - Relative Luminous Intensity 2.0 Iv rel - Relative Luminous Intensity Pure Green Pure Green 1.6 1.2 0.8 0.4 Pure Green 1.0 0.8 0.6 0.4 0.2 0 500 0 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) 95 9991 95 10325 Figure 26. Rel. Luminous Intensity vs. Ambient Temperature 520 540 560 580 600 l - Wavelength ( nm ) Figure 29. Relative Luminous Intensity vs. Wavelength Iv rel - Relative Luminous Intensity 2.4 Pure Green 2.0 1.6 1.2 0.8 0.4 0 95 10261 10 20 50 1 0.5 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T Figure 27. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 8 (10) Rev. A1: 01.06.1995 TELEFUNKEN Semiconductors TLH.42.. Dimensions in mm 95 10913 Rev. A1: 01.06.1995 9 (10) TLH.42.. TELEFUNKEN Semiconductors Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 10 (10) Rev. A1: 01.06.1995