TELEFUNKEN Semiconductors TLH.42..
Rev. A1: 01.06.1995 1 (10)
High Efficiency LED, ø 3 mm Tinted Undiffused Package
Color Type Technology Angle of Half Intensity
±
ö
High efficiency red TLHR42.. GaAsP on GaP
°
Soft orange TLHO42.. GaAsP on GaP
°
Yellow TLHY42.. GaAsP on GaP 22
°
Green TLHG42.. GaP on GaP
Pure green TLHP42.. GaP on GaP
Description
The TLH.42.. series was developed for standard applica-
tions like general indicating and lighting purposes.
It is housed in a 3 mm tinted clear plastic package. The
wide viewing angle of these devices provides a high on-
off contrast.
Several selection types with different luminous intensi-
ties are offered. All LEDs are categorized in luminous
intensity groups. The green and yellow LEDs are catego-
rized additionally in wavelength groups.
That allows users to assemble LEDs with uniform appear-
ance.
Features
D
Choice of five bright colors
D
Standard T-1 package
D
Small mechanical tolerances
D
Suitable for DC and high peak current
D
Wide viewing angle
D
Luminous intensity categorized
D
Yellow and green color categorized
94 8488
Applications
Status lights
OFF / ON indicator
Background illumination
Readout lights
Maintenance lights
Legend light
TELEFUNKEN Semiconductors
TLH.42..
Rev. A1: 01.06.19952 (10)
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
TLHR42.. ,TLHO42.. ,TLHY42.. ,TLHG42.. ,TLHP42..
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage VR6 V
DC forward current IF30 mA
Surge forward current tp ≤ 10
m
s IFSM 1 A
Power dissipation Tamb ≤ 60
°
C PV100 mW
Junction temperature Tj100
°
C
Operating temperature range Tamb –20 to +100
°
C
Storage temperature range Tstg –55 to +100
°
C
Soldering temperature t ≤ 5 s, 2 mm
from body Tsd 260
°
C
Thermal resistance junction/ambient RthJA 400 K/W
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
High efficiency red (TLHR42.. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity IF = 10 mA, IVmin/IVmax ≥ 0.5 TLHR4200 IV4 8 mcd
y
F,Vmin Vmax
TLHR4201 IV6.3 10 mcd
TLHR4205 IV10 15 mcd
Dominant wavelength IF = 10 mA
l
d612 625 nm
Peak wavelength IF = 10 mA
l
p635 nm
Angle of half intensity IF = 10 mA ϕ±22 deg
Forward voltage IF = 20 mA VF2 3 V
Reverse voltage IR = 10
m
A VR6 15 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Soft orange (TLHO42.. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity IF = 10 mA, IVmin/IVmax ≥ 0.5 TLHO4200 IV4 10 mcd
Dominant wavelength IF = 10 mA
l
d598 611 nm
Peak wavelength IF = 10 mA
l
p605 nm
Angle of half intensity IF = 10 mA ϕ±22 deg
Forward voltage IF = 20 mA VF2.4 3 V
Reverse current VR = 6 V IR10
m
A
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
TELEFUNKEN Semiconductors TLH.42..
Rev. A1: 01.06.1995 3 (10)
Yellow (TLHY42.. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity IF = 10 mA, IVmin/IVmax ≥ 0.5 TLHY4200 IV4 10 mcd
y
F,Vmin Vmax
TLHY4201 IV6.3 15 mcd
TLHY4205 IV10 20 mcd
Dominant wavelength IF = 10 mA
l
d581 594 nm
Peak wavelength IF = 10 mA
l
p585 nm
Angle of half intensity IF = 10 mA ϕ±22 deg
Forward voltage IF = 20 mA VF2.4 3 V
Reverse voltage IR = 10
m
A VR6 15 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Green (TLHG42.. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity IF = 10 mA, IVmin/IVmax ≥ 0.5 TLHG4200 IV6.3 10 mcd
y
F,Vmin Vmax
TLHG4201 IV10 15 mcd
TLHG4205 IV16 20 mcd
Dominant wavelength IF = 10 mA
l
d562 575 nm
Peak wavelength IF = 10 mA
l
p565 nm
Angle of half intensity IF = 10 mA ϕ±22 deg
Forward voltage IF = 20 mA VF2.4 3 V
Reverse voltage IR = 10
m
A VR6 15 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
Pure green (TLHP42.. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity IF = 10 mA, IVmin/IVmax ≥ 0.5 TLHP4200 IV2.5 7 mcd
Dominant wavelength IF = 10 mA
l
d555 565 nm
Peak wavelength IF = 10 mA
l
p555 nm
Angle of half intensity IF = 10 mA ϕ±22 deg
Forward voltage IF = 20 mA VF2.4 3 V
Reverse voltage IR = 10
m
A VR6 15 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
TELEFUNKEN Semiconductors
TLH.42..
Rev. A1: 01.06.19954 (10)
Typical Characteristics (Tamb = 25
_
C, unless otherwise specified)
020406080
0
25
50
75
100
125
P – Power Dissipation ( mW )
V
Tamb – Ambient Temperature ( °C )
100
95 10904
Figure 1. Power Dissipation vs. Ambient Temperature
0
10
20
30
40
60
020406080
I – Forward Current ( mA )
F
Tamb – Ambient Temperature ( °C )
100
95 10905
50
Figure 2. Forward Current vs. Ambient Temperature
0.01 0.1 1 10
1
10
100
1000
10000
tp – Pulse Length ( ms )
100
95 10047
I – Forward Current ( mA )
F
tp/T=0.01 0.02 0.05
0.1
0.2
1
0.5
Tamb
v
65°C
Figure 3. Forward Current vs. Pulse Length
0.4 0.2 0 0.2 0.4 0.6
95 10041
0.6
0.9
0.8
0°30°
10
°20
°
40°
50°
60°
70°
80°
0.7
1.0
I – Relative Luminous Intensity
v rel
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
02468
0.1
1
10
100
1000
10
95 10026 VF – Forward Voltage ( V )
I – Forward Current ( mA )
F
High Efficiency Red
tp/T=0.001
tp=10
m
s
Figure 5. Forward Current vs. Forward Voltage
0
0
0.4
0.8
1.2
1.6
95 10027
20 40 60 80 100
I – Relative Luminous Intensity
v rel
Tamb – Ambient Temperature ( °C )
High Efficiency Red
IF=10mA
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
TELEFUNKEN Semiconductors TLH.42..
Rev. A1: 01.06.1995 5 (10)
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10321
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I – Relative Luminous Intensity
v rel
2.0 High Efficiency Red
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
110
0.01
0.1
1
10
IF – Forward Current ( mA )
100
95 10029
I – Relative Luminous Intensity
v rel
High Efficiency Red
Figure 8. Relative Luminous Intensity vs. Forward Current
590 610 630 650 670
0
0.2
0.4
0.6
0.8
1.2
690
95 10040
I – Relative Luminous Intensity
v rel
l
– Wavelength ( nm )
1.0 High Efficiency Red
Figure 9. Relative Luminous Intensity vs. Wavelength
01234
0.1
1
10
100
VF – Forward Voltage ( V )
5
95 9990
I – Forward Current ( mA )
F
Soft Orange
Figure 10. Forward Current vs. Forward Voltage
020406080
0
0.4
0.8
1.2
1.6
2.0
100
95 9994
I – Relative Luminous Intensity
v rel
Tamb – Ambient Temperature ( °C )
Soft Orange
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10259
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I – Relative Luminous Intensity
v rel
2.0 Soft Orange
Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
TELEFUNKEN Semiconductors
TLH.42..
Rev. A1: 01.06.19956 (10)
110
0.01
0.1
1
10
IF – Forward Current ( mA )
100
95 9997
I – Relative Luminous Intensity
v rel
Soft Orange
Figure 13. Relative Luminous Intensity vs. Forward Current
570 590 610 630 650
0
0.2
0.4
0.6
0.8
1.2
670
95 10324
1.0
I – Relative Luminous Intensity
v rel
l
– Wavelength ( nm )
Soft Orange
Figure 14. Relative Luminous Intensity vs. Wavelength
02468
0.1
1
10
100
1000
10
95 10030 VF – Forward Voltage ( V )
I – Forward Current ( mA )
F
Yellow
tp/T=0.001
tp=10
m
s
Figure 15. Forward Current vs. Forward Voltage
0
0
0.4
0.8
1.2
1.6
95 10031
20 40 60 80 100
I – Relative Luminous Intensity
v rel
Tamb – Ambient Temperature ( °C )
Yellow
IF=10mA
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10260
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I – Relative Luminous Intensity
v rel
2.0 Yellow
Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
110
0.01
0.1
1
10
IF – Forward Current ( mA )
100
95 10033
I – Relative Luminous Intensity
v rel
Yellow
Figure 18. Relative Luminous Intensity vs. Forward Current
TELEFUNKEN Semiconductors TLH.42..
Rev. A1: 01.06.1995 7 (10)
550 570 590 610 630
0
0.2
0.4
0.6
0.8
1.2
650
95 10039
I – Relative Luminous Intensity
v rel
l
– Wavelength ( nm )
1.0 Yellow
Figure 19. Relative Luminous Intensity vs. Wavelength
02468
0.1
1
10
100
1000
10
95 10034 VF – Forward Voltage ( V )
I – Forward Current ( mA )
F
Green
tp/T=0.001
tp=10
m
s
Figure 20. Forward Current vs. Forward Voltage
0
0
0.4
0.8
1.2
1.6
95 10035
20 40 60 80 100
I – Relative Luminous Intensity
v rel
Tamb – Ambient Temperature ( °C )
IF=10mA
Green
Figure 21. Rel. Luminous Intensity vs. Ambient Temperature
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10263
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I – Relative Luminous Intensity
v rel
2.0 Green
Figure 22. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
110
0.01
0.1
1
10
IF – Forward Current ( mA )
100
95 10037
I – Relative Luminous Intensity
v rel
Green
Figure 23. Relative Luminous Intensity vs. Forward Current
520 540 560 580 600
0
0.2
0.4
0.6
0.8
1.2
620
95 10038
I – Relative Luminous Intensity
v rel
l
– Wavelength ( nm )
1.0 Green
Figure 24. Relative Luminous Intensity vs. Wavelength
TELEFUNKEN Semiconductors
TLH.42..
Rev. A1: 01.06.19958 (10)
01234
0.1
1
10
100
VF – Forward Voltage ( V )
5
95 9988
I – Forward Current ( mA )
F
Pure Green
Figure 25. Forward Current vs. Forward Voltage
020406080
0
0.4
0.8
1.2
1.6
2.0
100
95 9991
I – Relative Luminous Intensity
v rel
Tamb – Ambient Temperature ( °C )
Pure Green
Figure 26. Rel. Luminous Intensity vs. Ambient Temperature
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10261
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I – Relative Luminous Intensity
v rel
2.0 Pure Green
Figure 27. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
110
0.01
0.1
1
10
IF – Forward Current ( mA )
100
95 9998
I – Relative Luminous Intensity
v rel
Pure Green
Figure 28. Relative Luminous Intensity vs. Forward Current
500 520 540 560 580
0
0.2
0.4
0.6
0.8
1.2
600
95 10325
1.0
I – Relative Luminous Intensity
v rel
l
– Wavelength ( nm )
Pure Green
Figure 29. Relative Luminous Intensity vs. Wavelength
TELEFUNKEN Semiconductors TLH.42..
Rev. A1: 01.06.1995 9 (10)
Dimensions in mm
95 10913
TELEFUNKEN Semiconductors
TLH.42..
Rev. A1: 01.06.199510 (10)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
