AUIRF4905 AUTOMOTIVE GRADE HEXFET(R) Power MOSFET Features Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS -55V RDS(on) max. 0.02 ID -74A S D G Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number Package Type AUIRF4905 TO-220 TO-220 AUIRF4905 G D S Gate Drain Source Standard Pack Form Quantity Tube 50 Orderable Part Number AUIRF4905 Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) -74 ID @ TC = 100C IDM PD @TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current Maximum Power Dissipation -52 -260 200 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Symbol RJC RCS RJA Units A W 1.3 20 930 -38 20 -5.0 -55 to + 175 W/C V mJ A mJ V/ns C 300 10 lbf*in (1.1N*m) Parameter Typ. Max. Units Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient --- 0.50 --- 0.75 --- 62 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-9 AUIRF4905 Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions -55 --- --- V VGS = 0V, ID = -250A --- -0.05 --- V/C Reference to 25C, ID = -1mA --- --- 0.02 VGS = -10V, ID = -38A -2.0 --- -4.0 V VDS = VGS, ID = -250A 21 --- --- S VDS = -25V, ID = -38A --- --- -25 VDS = -55V, VGS = 0V A --- --- -250 VDS = -44V,VGS = 0V,TJ =150C --- --- -100 VGS = -20V nA --- --- 100 VGS = 20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- --- --- --- 18 99 61 96 180 32 86 --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 3400 1400 640 --- --- --- Min. Typ. Max. Units --- --- -74 --- --- -260 --- --- --- --- 89 230 -1.6 130 350 Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = -38A nC VDS = -44V VGS = -10V,See Fig 6 and 13 VDD = -28V ID = -38A ns RG= 2.5 RD= 0.72See Fig. 10 Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = -38A,VGS = 0V ns TJ = 25C ,IF = -38A nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) Starting TJ = 25C, L = 1.3mH, RG = 25, IAS = -38A. (See Figure 12) ISD -38A, di/dt -270A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. 2 2017-09-20 AUIRF4905 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 100 10 -4.5V 100 1 1 10 0.1 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) TJ = 25C 100 TJ = 175C 10 VDS = -25V 20s PULSE WIDTH 6 7 8 9 -VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 10 A 100 Fig. 2 Typical Output Characteristics 1000 5 1 -VDS , Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 4 20s PULSE WIDTH TC = 175C 1 100 -VDS , Drain-to-Source Voltage (V) 1 -4.5V 10 20s PULSE WIDTH Tc = 25C A 0.1 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) TOP 10 A I D = -64A 1.5 1.0 0.5 VGS = -10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig. 4 Normalized On-Resistance Vs. Temperature 2017-09-20 AUIRF4905 7000 5000 -VGS , Gate-to-Source Voltage (V) 6000 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss 4000 Coss 3000 2000 Crss 1000 0 1 10 100 I D = -38A VDS = -44V VDS = -28V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 80 120 160 A 200 Q G , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -I D , Drain Current (A) -ISD , Reverse Drain Current (A) 40 100 TJ = 175C TJ = 25C 10 VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 A 1.8 100 100s 1ms 10 10ms TC = 25C TJ = 175C Single Pulse 1 1 A 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2017-09-20 AUIRF4905 80 ID , Drain Current (A) 60 40 20 Fig 10a. Switching Time Test Circuit 0 25 50 75 100 125 TC , Case Temperature 150 175 ( C) Fig 9. Maximum Drain Current vs. Fig 10b. Switching Time Waveforms Thermal Response (Z thJC) 1 D = 0.50 0.20 0.1 0.01 0.00001 0.10 PDM 0.05 t1 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x ZthJC + TC 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2017-09-20 AUIRF4905 Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 2500 ID -16A -27A -38A TOP BOTTOM 2000 1500 1000 500 0 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 13a. Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit 2017-09-20 AUIRF4905 Fig 14. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET(R) Power MOSFETs 7 2017-09-20 AUIRF4905 TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220 Part Marking Information Part Number AUIRF4905 YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2017-09-20 AUIRF4905 Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant 3L-TO-220 N/A Class M4 (+/- 425V) AEC-Q101-002 Class H2 (+/- 4000V) AEC-Q101-001 Class C5 (+/- 1125V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 09/20/2017 Comments Updated datasheet with corporate template Corrected typo error on package outline and part marking on page 8. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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