AUIRF4905
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide variety of other
applications.
1 2015-11-9
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
VDSS -55V
RDS(on) max. 0.02
ID -74A
G D S
Gate Drain Source
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRF4905 TO-220 Tube 50 AUIRF4905
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) -74
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) -52
IDM Pulsed Drain Current -260
PD @TC = 25°C Maximum Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 930
mJ
IAR Avalanche Current -38 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
TO-220
AUIRF4905
S
D
G
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.75
°C/W
RCS Case-to-Sink, Flat, Greased Surface 0.50 –––
RJA Junction-to-Ambient ––– 62
AUIRF4905
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Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Starting TJ = 25°C, L = 1.3mH, RG = 25, IAS = -38A. (See Figure 12)
ISD -38A, di/dt -270A/µs, VDD V(BR)DSS, TJ 175°C
Pulse width 300µs; duty cycle 2%.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.02 VGS = -10V, ID = -38A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
gfs Forward Trans conductance 21 ––– ––– S VDS = -25V, ID = -38A
IDSS Drain-to-Source Leakage Current ––– ––– -25 µA VDS = -55V, VGS = 0V
––– ––– -250 VDS = -44V,VGS = 0V,TJ =150°C
IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– ––– 180
nC
ID = -38A
Qgs Gate-to-Source Charge ––– ––– 32 VDS = -44V
Qgd Gate-to-Drain Charge ––– ––– 86 VGS = -10V,See Fig 6 and 13
td(on) Turn-On Delay Time ––– 18 –––
ns
VDD = -28V
tr Rise Time ––– 99 ––– ID = -38A
td(off) Turn-Off Delay Time ––– 61 ––– RG= 2.5
tf Fall Time ––– 96 ––– RD= 0.72See Fig. 10
LD Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 3400 –––
pF
VGS = 0V
Coss Output Capacitance ––– 1400 ––– VDS = -25V
Crss Reverse Transfer Capacitance ––– 640 ––– ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– -74
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– -260 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C,IS = -38A,VGS = 0V
trr Reverse Recovery Time ––– 89 130 ns TJ = 25°C ,IF = -38A
Qrr Reverse Recovery Charge ––– 230 350 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
AUIRF4905
3 2017-09-20
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
Fig. 4 Normalized On-Resistance
Vs. Temperature
1
10
100
1000
0.1 1 10 100
D
DS
20µs PULSE WIDTH
T = 25°C
c
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
1
10
100
1000
0.1 1 10 100
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
20µs PULSE WIDTH
T = 175°C
C
1
10
100
1000
45678910
T = 25°C
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -25V
20µs PULSE WIDTH
DS
T = 175°C
J
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = -10V
GS
I = -64A
D
AUIRF4905
4 2017-09-20
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
0
1000
2000
3000
4000
5000
6000
7000
110100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
04080120160200
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 13
I = -38A
V = -44V
V = -28V
D
DS
DS
1
10
100
1000
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
T = 25°C
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
T = 175°C
J
1
10
100
1000
110100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10ms
A
-I , Drain Current (A)
-V , Drain-to-Source Voltage (V)
DS
D
100µs
1ms
T = 25°C
T = 175°C
Single Pulse
C
J
AUIRF4905
5 2017-09-20
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150 175
0
20
40
60
80
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF4905
6 2017-09-20
Fig 12c. Maximum Avalanche Energy vs. Drain Current
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
0
500
1000
1500
2000
2500
25 50 75 100 125 150 175
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP -16A
-27A
BOTTOM -38A
D
AUIRF4905
7 2017-09-20
Fig 14. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs
AUIRF4905
8 2017-09-20
TO-220 Part Marking Information
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUIRF4905
Lot Code
Part Number
IR Logo
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
AUIRF4905
9 2017-09-20
† Highest passing voltage.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level 3L-TO-220 N/A
ESD
Machine Model Class M4 (+/- 425V)†
AEC-Q101-002
Human Body Model Class H2 (+/- 4000V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 1125V)†
AEC-Q101-005
RoHS Compliant Yes
Revision History
Date Comments
09/20/2017 Updated datasheet with corporate template
Corrected typo error on package outline and part marking on page 8.
