BC337 BC337A BC338 - PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL TRANSISTORS oe SbE D MM 7310826 004139846 OT) MMPHIN- eG 29-23 N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively. QUICK REFERENCE DATA Collector-emitter voltage (VpE = 0) Collector-emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 C Junction temperature Transition frequency at f = 35 MHz I= 10 mA; Veg =5V D.C. current gain Ic = 100 mA; VcE=1V hFE BC337 |BC337A | BC338 max. Vv max. Vv max. 1000 mA max. 800 mW max. 150 oC typ. 100 MHz 100 to 600 MECHANICAL DATA Dimensions in mm Fig. 1 TO-92. uO Pinning 1 = emitter 2 = base b 3 = collector wesc cr = 0.40 + 6.2 max p- 12,7 min _> fogs ae 2.54 ~~ > f C7 ] nol Le glam win 25.= ne S Capability approved to CECC NECC-C-002 June 1992 M11BC337 BC337A BC338. . . HL. -- PHILIPS INTERNATIONAL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VE = 0) Collector-emitter voltage (open base) ic = 10mA Emitter-base voltage (open collector) Collector current {d.c.) Collector current (peak value) Emitter current (peak value} Base current (d.c.) Base current (peak value) Total power dissipation at Tab = 26 OC up to Tamb = 25 OC Storage temperature Junctlon temperature THERMAL RESISTANCE From junction to ambient in free air From Junction to ambient max. max. max. max, max, max, max. max. max. max, max, 200 625 800 65 to + 150 150 0,2 0,156 1-29-2 3 K/mW K/mWw* * Transistor mounted on printed circuit board, max. lead Jength 4 mm, mounting pad for collector lead min. 10 mm x 10 mm. t "| 112 June 1992BC337 Silicon planar epitaxial transistors BC337A PHILIPS INTERNATIONAL 56E D MM 732082b 00413990 75T MBPHIN CHARACTERISTICS ~ . ACT T=29-23 Tj = 25 9C unless otherwise specified To Collector cut-off current Ie = 0; Vop = 20 V; Tj = 25 OC IcBo < 100 nA Ig = 0; Vcg = 20 V; Tj = 150 C IcBo < BBA Emitter cut-off current Ic =O; Vep=5V lEBO < 10 pA Base-omitter voltage Ic = 500 mA; Veg HRT V VBE < 12 V Saturation voltage I = 500 mA; Ig = 50mA VcEsat < 700 mV D.C. current gain Ig = 500 mA; Voce =1V hre > 40 Iq = 100 mA; Vee = 1 V; BC337; BC338 hre 1G0 to 600 BC337A hFe 100 to 400 BC337-16 BC338-16 hre 100 to 250 BC337-25 BC338-25 hee 160 to 400 BC337-40 BC338-40 NFE 250 to 600 Transition frequency at f = 35 MHz Ic = 10 mA; Vee =5V fT typ. 100 MHz Collector capacitance at f = 1 MHz ss le = lg =0; VeRp = 10V Ce typ. 5 pF Vee decreases by about 2 mV/K with increasing temperature. June 1992 113BC337 BC337A BC338 Oe ee PHILIPS INTERNATIONAL SLE D MM 7220826 OO41991 &4b BEPHIN - 726796200 ee 100 tot max (%) 75 50 25 0 0 50 100 150 Fig. 2 Tamb (C) 104 2th j-a (C/W) 103 102 10 1 1073 1072 io7! 1 10 102 ty (s) 103 114 June 1992 ) |