1 - 4
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
IXFK IXFN
VDSS TJ= 25°C to 150°C 100 100 V
VDGR TJ= 25°C to 150°C; RGS = 1 MW100 100 V
VGS Continuous ±20 ±20 V
VGSM Transient ±30 ±30 V
ID25 TC= 25°C 100 150 A
ID120 TC= 120°C, limited by external leads 76 - A
IDM TC= 25°C, pulse width limited by TJM 560 560 A
IAR TC= 25°C7575A
EAR TC= 25°C3030mJ
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 5 V/ns
TJ £ 150°C, RG = 2 W
PDTC= 25°C 500 520 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in) from case for 10 s 3 00 - °C
VISOL 50/60 Hz, RMS t = 1 min - 2500 V~
IISOL £ 1 mA t = 1 s - 3000 V~
MdMounting torque 0.9/6 1.5/13 Nm/lb.in.
Terminal connection torque - 1.5/13 Nm/lb.in.
Weight 10 30 g
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Features
●International standard packages
●JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
●miniBLOC with Aluminium nitride
isolation
●Low RDS (on) HDMOSTM process
●Rugged polysilicon gate cell structure
●Unclamped Inductive Switching (UIS)
rated
●Low package inductance
●Fast intrinsic Rectifier
Applications
●DC-DC converters
●Synchronous rectification
●Battery chargers
●Switched-mode and resonant-mode
power supplies
●DC choppers
●Temperature and lighting controls
●Low voltage relays
Advantages
●Easy to mount
●Space savings
●High power density
TO-264 AA (IXFK)
S
GD
D
S
G
S
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
S
G
S
D
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 1 0 0 V
VGH(th) VDS = VGS, ID = 8 mA 2 4 V
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
IDSS VDS = 0.8 • VDSS TJ = 25°C 400 mA
VGS = 0 V TJ = 125°C2mA
RDS(on) VGS = 10 V, ID = 75 A 1 2 mW
Pulse test, t £ 300 ms, duty cycle d £ 2 %
92803G(8/96)
miniBLOC, SOT-227 B (IXFN)
E153432
(TAB)
VDSS ID25 RDS(on)
IXFK100N10 100 V 100 A 12 mW
IXFN150N10 100 V 150 A 12 mW
trr £ 200 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 50 A, pulse test 8 0 S
Ciss 9000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 3200 pF
Crss 1800 pF
td(on) 30 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 75 A 6 0 ns
td(off) RG = 1 W (External), 1 00 ns
tf60 ns
Qg(on) 360 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 75 A 7 5 nC
Qgd 180 nC
RthJC TO-264 AA 0.25 K/W
RthCK TO-264 AA 0.15 K/W
RthJC miniBLOC, SOT-227 B 0.24 K/W
RthCK miniBLOC, SOT-227 B 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V IXFK 100 1 00 A
IXFN 150 150 A
ISM Repetitive; IXFK 100 400 A
pulse width limited by TJM IXFN 150 600 A
VSD IF = 100 A, VGS = 0 V, 1.75 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr 150 200 ns
QRM 0.6 mC
IRM 8A
IF = 25 A
-di/dt = 100 A/ms,
VR = 50 V
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
TO-264 AA Outline
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
miniBLOC, SOT-227 B
IXFK 100N10
IXFN 150N10
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4
© 2000 IXYS All rights reserved
IXFK 100N10
IXFN 150N10
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- Normalized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
TC - Degrees C
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0
25
50
75
100
125
150
175
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Norm aliz ed
0.50
0.75
1.00
1.25
1.50
1.75
2.00
ID - A m pe re s
0 40 80 120 160 200 240 280 320
R
DS(on)
- Norm aliz ed
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VGS - Vol t s
012345678910
I
D
- Amperes
0
50
100
150
200
250
300
TJ = 125
°
C
VDS - Volts
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I
D
- Amp eres
0
50
100
150
200
250
300
350
400
5V
VGS = 10V
VGS = 15V
ID = 75A
BVDSS
VGS(th)
6V
8V
9V
VGS = 10V
7V
TJ = 25°C
TJ = 125
°
C
TJ = 25°C
150N10
100N10
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© 2000 IXYS All rights reserved
IXFK 100N10
IXFN 150N10
Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves
Fig.9 Source Current vs. Source
to Drain Voltage
Fig.10 Transient Thermal Impedance
Time - Seconds
0.001 0.01 0.1 1
Thermal Response - K/W
0.01
0.1
VDS - Volts
0 5 10 15 20 25
Capacitance - pF
0
2000
4000
6000
8000
10000
12000
Coss
Ciss
Gate Charge - nCoulombs
0 50 100 150 200 250 300 350 400
V
GS
- Volts
0
2
4
6
8
10
12 VDS = 50V
ID = 75A
IG = 1mA
Crss
f = 1MHz
VDS = 25V
VSD - Volt
0.00 0.25 0.50 0.75 1.00 1.25 1.50
I
S
- Amperes
0
25
50
75
100
125
150
TJ = 25°C
TJ = 125°C
0.5
