ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
8000 V Phase Control Thyristor
5STP 20N8500
I
2000 A
I
3150 A
I
52×10
A
V
1.25 V
r
0.48
Doc. No. 5S YA1072-03 Jan. 13
· Patented free-floating silicon technology
· Low on-state and switching losses
· Designed for traction, energy and industrial applications
· Optimum power handling capability
· Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Max. surge peak forward and
reverse blocking voltage VDSM,
VRSM
tp = 10 ms, f = 5 Hz
Tvj = 5…115°C, Note 1 8500 V
Max repetitive peak forward
and reverse blocking voltage VDRM,
VRRM f = 50 Hz, tp = 10 ms , tp1 = 250 ms,
Tvj = 5…115°C, Note 1, Note 2 8000 V
Max crest working forward
and reverse voltages VDWM,
VRWM
5340 V
Crit ical rate of rise of
commutating voltage dv/dtcrit Exp. to 5340 V, Tvj = 115°C 2000 V/µs
Characteristic values
Forward leakage curr ent IDRM VDRM, Tvj = 115°C 1000 mA
Rev erse leakage current IRRM VRRM, Tvj = 115°C 1000 mA
Note 1: Volt age de-r ating factor of 0.11% per °C is applicable for Tvj b elow +5 °C
Note 2: Rec omm ended mi nimum ratio of V DRM / VDWM or VRRM / VRWM = 2. See App. Note 5SYA 20 51.
Mechanical data
Maximum rated values 1)
Mounting force FM81 90 108 kN
Acceleration a Devi ce unclamped 50 m/s2
Acceleration a Devi ce clamped 100 m/s2
Characteristic values
Weight m 2.9 kg
Housing t hickness H FM = 90 kN, Ta = 25 °C 35.3 36 mm
Surface creepage distance DS56 mm
Air stri ke distance Da22 mm
1) Maximum rated valu es indicate li mits beyond which damag e to the device may occur