TWR-K80F150M User's Guide, Rev. 0, 11/2015
6 Freescale Semiconductor, Inc.
Table 1. K80FN256VDC15 key features
Up to 150 MHz ARM Cortex-M4 based core with DSP instructions and
Single Precision Floating Point unit
Memory and memory expansion
256 KB program flash memory and 256 KB RAM
Dual QuadSPI with XIP
FlexBus external bus interface and SDRAM controller
One 16-bit SAR ADCs, two 6-bit DAC and one 12-bit DAC
Two analog comparators (CMP) containing a 6-bit DAC and
programmable reference input
Voltage reference 1.2 V
USB full-/low-speed On-the-Go controller
Secure Digital Host Controller (SDHC)
FlexIO
One I2S module, three SPI, four I2C modules and five LPUART
modules
EMVSIM module with ISO7816 smart card support
Hardware random-number generator
Supports DES, AES, SHA accelerator (CAU)
Multiple levels of embedded flash security
One 4-channel Periodic interrupt timer
Two 16-bit low-power timer PWM modules
Two 8-channel motor control/general purpose/PWM timers
Two 2-channel quadrature decoder/general purpose timers
Real-time clock with independent 3.3 V power domain
Programmable delay block
Low-power hardware touch sensor interface (TSI)
General-purpose input/output
Operating Characteristics
Main VDD Voltage and Flash write voltage range:1.71 V – 3.6 V
Temperature range (ambient): -40 to 105°C
Independent VDDIO for PORTE (QuadSPI): 1.71 V – 3.6 V
3.2. Clocking
The Kinetis microcontrollers start up from an internal digitally controlled oscillator (DCO). The
software can enable an external oscillator if required. The external oscillator for the Multipurpose Clock
Generator (MCG) module can range from 32.768 kHz up to a 32 MHz crystal or ceramic resonator. The
external oscillator for the Real-Time Clock (RTC) module accepts a 32.768 kHz crystal.
Two crystals are provided on-board for clocking the K80F150M device: a 12 MHz crystal as the main
oscillator to clock the MCG module and a 32.768 kHz crystal for clocking the RTC module.
3.3. System power
In standalone operation, the main power source for the TWR-K80F150M is derived from the 5.0 V input
from either the USB micro-B connector, J24, or the debugger header, J11, when a shunt is placed on
jumper J4.
There are multiple power configurations available to power both the MCU VDD domain and the
VDDIO_E domain, while keeping the requirement that VDD>VDDIO_E during power up and power
down. See sheet 3 of the TWR-K80F150M Schematics (document TWR-K80F150M-SCH) for further
details.