T4-LDS-0061, Rev. 3 (121515) ©2012 Microsemi Corporation Page 1 of 7
2N7236
Compliant P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/595
Qualified Levels:
JAN, JANT X, and
JANTXV
DESCRIPTION
This 2N7236 switching transistor is military qualified up to the JANTXV level for high-reliability
applications. This device is also availab le in a low profile U surface mount package.
Microsemi also offers numerous other transistor products to meet higher and lower power
ratings with various switching speed requirements in both through-hole and surface-mount
packages.
TO-254AA Package
Also available in:
“U” (SMD-1 or
TO-267AB) package
(surface mount)
2N7236U
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N7236 number.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/595.
(See part nomenclature for all available options.)
• RoHS compliant by design.
APPLICATIONS / BENEFITS
• Low-profile design.
• Military and other high-rel iability a pplica tions.
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions
Symbol
Value
Unit
Operating & Stor age Junction Temperatur e Rang e
T
J
& T
stg
-55 to +150
°C
Thermal Resi stan ce Jun cti on-to-Case
RӨJC
1.0
oC/W
Total Power Dissipation
A
(1)
PT
4
125
W
Gate-Source Voltage, dc
VGS
± 20
V
Drain Current, dc @ TC = +25 ºC (2)
ID1
-18
A
Drain Current, dc @ TC = +100 ºC (2)
ID2
-11
A
Off-State Current (Peak Total Value) (3)
IDM
-72
A (pk)
Source Current
IS
-18
A
NOTES: 1. Derate linearly by 1.0 W/ºC fo r TC > +25 ºC.
2. The foll owing form ul a derives the maximum theoret ical ID limit . ID is limited by package and internal
wires and may als o be limited by pin diameter:
3. IDM = 4 x I D1 as calculated in note 2.
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2N7236
MECHANICAL and PACKAGING
• CASE: Ceramic and gold over nickel plated steel.
• TERMINALS: Gold over nickel plated tungsten/copper.
• MARKING: Manufactur er’s ID , part number , date cod e, BeO.
• WEIGHT: 6.5 gra ms.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N7236
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
SYMBOLS & DEFINITIONS
Symbol
Definition
di/dt
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
IF
Forward current
RG
Gate drive impedance
VDD
Drain supply voltage
VDS
Drain source voltage, dc
VGS
Gate source voltage, dc
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2N7236
ELECTRICA L CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Drain-S our ce Br eakdown Volta ge
VGS = 0 V, ID = 1.0 mA
V(BR)DSS -100 V
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = -0.25 mA
VDS ≥ VGS, ID = -0.25 mA, TJ = +12 5 °C
V
DS
≥ V
GS
, I
D
= -0.25 mA, T
J
= -55 °C
VGS(th)1
VGS(th)2
VGS(th)3
-2.0
-1.0
-4.0
-5.0
V
Gate Current
VGS = ± 20 V, VDS = 0 V
VGS = ± 20 V, VDS = 0 V, TJ = +12 5 °C
IGSS1
IGSS2
±100
±200 nA
Drain Current
VGS = 0 V, VDS = -80 V IDSS1 -25 µA
Drain Current
VGS = 0 V, VDS = -100 V, TJ = +125 °C IDSS2
-1.0 mA
Drain Current
VGS = 0 V, VDS = -80 V, TJ = +125 °C IDSS3
-0.25 mA
Static Drain-Source On-State Resistance
VGS = 10 V, ID = -11.0 A pulsed
rDS(on)1
0.20
Ω
Static Drain-Source On-State Resistance
V
GS
= -10 V, I
D
= -18.0 A pulsed rDS(on)2 0.22 Ω
Static Drain-Source On-State Resistance
TJ = +125 °C
VGS = -10 V, ID = -11.0 A pulsed rDS(on)3 0.34 Ω
Diode Forward Voltage
VGS = 0 V, ID = -18.0 A pulsed VSD -5.0 V
DYN AMIC CH AR ACTE RISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
VGS = -10 V, ID = -18.0 A, VDS = -50 V
Qg(on)
60 nC
Gate to Source Charge
VGS = -10 V, ID = -18.0 A, VDS = -50 V Qgs 13 nC
Gate to Drain Charge
VGS = -10 V, ID = -18.0 A, VDS = -50 V Qgd
35.2 nC
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2N7236
ELECTRICA L CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-on delay time
ID = -11.0 A, VGS = -10 V, RG = 9.1
Ω
, VDD = -50 V
td(on) 35 ns
Rinse time
ID = -11.0 A, VGS = -10 V, RG = 9.1
Ω
, VDD = -50 V
tr 85 ns
Turn-off delay time
I
D
= -11.0 A, V
GS
= -10 V, R
G
= 9.1 Ω, V
DD
= -50 V td(off) 85 ns
Fall time
ID = -11.0 A, VGS = -10 V, RG = 9.1
Ω
, VDD = -50 V
tf 65 ns
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, V
DD
≤ 30 V, I
F
= -18.0 A trr 280 ns
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2N7236
GRAPHS
t1, Rectangle Pulse Duration (seconds)
FIGURE 1
Thermal Impedance Curves
TC CASE TEMPERATURE (ºC)
FIGURE 2
Maximum Drain Current vs Case Temperature Graphs
Thermal Response (ZθJC)
I
D
DRAIN CURRENT (AMPERES)
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2N7236
GRAPHS (continued)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3
Maximum Safe Operating Area
I
D
DRAIN CURRENT (AMPERES)
T4-LDS-0061, Rev. 3 (121515) ©2012 Microsemi Corporation Page 7 of 7
2N7236
PACKAGE DIMENSIONS
NOTES:
Dimensions
Notes
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Protrusion thickness of ceramic eyelets included in
dimension LL.
4. All terminals are isolated from case.
5. In accordance with ASME Y14.5M, diameters are
equiva lent t o Φx symbology.
Ltr
Inch
Millimeters
Min
Max
Min
Max
BL
.535
.545
13.59
13.84
CH
.249
.260
6.32
6.60
LD
.035
.045
0.89
1.14
LL
.510
.570
12.95
14.48
3
LO
.150 BSC
3.81 BSC
LS
.150 BSC
3.81 BSC
MHD
.139
.149
3.53
3.78
MHO
.665
.685
16.89
17.40
TL
.790
.800
20.07
20.32
4
TT
.040
.050
1.02
1.27
4
TW
.535
.545
13.59
13.84
Term 1
Drain
Term 2
Source
Term 3
Gate