SFH615A-3X018T
www.vishay.com Vishay Semiconductors
Rev. 1.0, 08-Feb-13 1Document Number: 84185
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS
DESCRIPTION
The SFH615A-3X018T features a variety of transfer ratios,
low coupling capacitance and high isolation voltage. This
coupler has a GaAs infrared diode emitter, which is optically
coupled to a silicon planar phototransistor detector, and is
incorporated in a plastic SMD package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
FEATURES
• Excellent CTR linearity depending on forward
current
• Isolation test voltage, 5300 VRMS
• Fast switching times
• Low CTR degradation
• Low coupling capacitance
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Switchmode power supply
•Telecom
• Battery powered equipment
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-5 (VDE 0884-5) available with option 1
• cUL tested to CSA 22.2 bulletin 5A
• BSI IEC 60950, IEC 60065
• FIMKO EN6005, EN60950-1
E
CA
C
1
2
4
3
17448-5
1
ORDERING INFORMATION
SFH615A- 3X018T
PART NUMBER CTR
BIN
PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED/PACKAGE CTR (%)
10 mA
VDE, UL, cUL, BSI, FIMKO 100 to 200
SMD-4, option 8 SFH615A-3X018T
9.27 mm
SMD-4
SFH615A-3X018T
www.vishay.com Vishay Semiconductors
Rev. 1.0, 08-Feb-13 2Document Number: 84185
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD).
Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
DC forward current IF60 mA
Surge forward current tp 10 μs IFSM 2.5 A
OUTPUT
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
tp 1 ms IC100 mA
COUPLER
Isolation test voltage
between emitter and detector t = 1 s VISO 5300 VRMS
Creepage distance 7mm
Clearance distance 7mm
Insulation thickness between emitter and detector 0.4 mm
Comparative tracking index per
DIN IEC112/VDE0303 part 1 CTI 175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012
VIO = 500 V, Tamb = 100 °C RIO 1011
Storage temperature range Tstg - 55 to + 150 °C
Ambient temperature range Tamb - 55 to +100 °C
Soldering temperature (1) max. 10 s Tsld 260 °C
0
50
100
150
200
0 255075100125150
18483
Ptot - Power Dissipation (mW)
Phototransistor
Diode
Tamb - Ambient Temperature (°C)
SFH615A-3X018T
www.vishay.com Vishay Semiconductors
Rev. 1.0, 08-Feb-13 3Document Number: 84185
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s thermal
characteristics of optocouplers application note.
(1) For 2 layer FR4 board (4" x 3" x 0.062")
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
LED power dissipation Pdiss 100 mW
Output power dissipation Pdiss 150 mW
Maximum LED junction temperature Tjmax. 125 °C
Maximum output die junction temperature Tjmax. 125 °C
Thermal resistance, junction emitter to board EB 173 °C/W
Thermal resistance, junction emitter to case EC 149 °C/W
Thermal resistance, junction detector to board DB 111 °C/W
Thermal resistance, junction detector to case DC 127 °C/W
Thermal resistance, junction emitter to
junction detector ED 95 °C/W
Thermal resistance, board to ambient (1) BA 195 °C/W
Thermal resistance, case to ambient (1) CA 3573 °C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 60 mA VF1.25 1.65 V
Reverse current VR = 6 V IR0.01 10 μA
Capacitance VR = 0 V, f = 1 MHz CO13 pF
OUTPUT
Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 5.2 pF
Collector emitter leakage current VCE = 10 V ICEO 5 100 nA
COUPLER
Collector emitter saturation voltage IF = 10 mA, IC = 2.5 mA VCEsat 0.25 0.4 V
Coupling capacitance CC0.4 pF
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
IC/IF
IF = 10 mA, VCE = 5 V CTR 100 200 %
IF = 1 mA, VCE = 5 V CTR 34 70 %
T
A
θ
CA
T
C
T
JD
T
JE
T
B
θ
EC
θ
EB
θ
DC
θ
DB
θ
BA
θ
DE
T
A
19996
Package
SFH615A-3X018T
www.vishay.com Vishay Semiconductors
Rev. 1.0, 08-Feb-13 4Document Number: 84185
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
NON-SATURATED
Rise time IF = 10 mA, VCC = 5 V, TA = 25 °C, RL = 75 tr2μs
Fall time IF = 10 mA, VCC = 5 V, TA = 25 °C, RL = 75 tf2μs
Turn-on time IF = 10 mA, VCC = 5 V, TA = 25 °C, RL = 75 ton 3μs
Turn-off time IF = 10 mA, VCC = 5 V, TA = 25 °C, RL = 75 toff 2.3 μs
Cut-off frequency IF = 10 mA, VCC = 5 V, TA = 25 °C, RL = 75 fctr 250 kHz
SATURATED
Rise time VCC = 5 V, TA = 25 °C, RL = 1 k, IF = 10 mA tr3μs
Fall time VCC = 5 V, TA = 25 °C, RL = 1 k, IF = 10 mA tf14 μs
Turn-on time VCC = 5 V, TA = 25 °C, RL = 1 k, IF = 10 mA ton 4.2 μs
Turn-off time VCC = 5 V, TA = 25 °C, RL = 1 k, IF = 10 mA toff 23 μs
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification (according to IEC 68 part 1) 55/100/21
Comparative tracking index CTI 175 399
VIOTM VIOTM 10 000 Vpeak
VIORM VIORM 890 Vpeak
PSO PSO 400 mW
ISI ISI 275 mA
TSI TSI 175 °C
Creepage distance 7mm
Clearance distance 7mm
Insulation thickness, reinforced rated per IEC 60950 2.10.5.1 0.4 mm
SFH615A-3X018T
www.vishay.com Vishay Semiconductors
Rev. 1.0, 08-Feb-13 5Document Number: 84185
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 2 - Linear Operation (without Saturation)
Fig. 3 - Switching Operation (with Saturation)
Fig. 4 - Current Transfer Ratio (Typ.) vs. Temperature
Fig. 5 - Output Characteristics (Typ.) Collector Current vs.
Collector Emitter Voltage
Fig. 6 - Diode Forward Voltage (Typ.) vs. Forward Current
Fig. 7 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage
isfh615a_01
RL=75 Ω
VCC =5V
IC
IF
47 Ω
isfh615a_02
1 Ω
V
CC
=5V
47 Ω
I
F
isfh615a_03
- 25 0 25 50 75
103
102
101
5
5
(%)
IC
I
TA (°C)
4
3
2
1
IF = 10 mA, VCE = 5 V
isfh615a_04
30
20
10
00 5 10 15
IF =14 mA
2 mA
4 mA
6 mA
8 mA
10 mA
12 mA
1 mA
I
C
(mA)
V
CE
(V)
isfh615a_05
VF (V)
IF (mA)
25°
50°
75°
1.2
1.1
1.0
0.9
10- 1 100101102
isfh615a_06
20
15
10
5
0
C (pF)
Ve (V)
10-2 10-1 100101102
CCE
f = 1 MHz
SFH615A-3X018T
www.vishay.com Vishay Semiconductors
Rev. 1.0, 08-Feb-13 6Document Number: 84185
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 8 - Permissible Pulse Handling Capability Forward Current
vs. Pulse Width
PACKAGE DIMENSIONS millimeters
PACKAGE MARKING (example of SFH615A-3X018T)
Notes
• VDE logo is only marked on option 1 parts.
• Tape and reel suffix (T) is not part of the package marking.
isfh615a_07
IF (mA)
tp (s)
10- 5 10- 4 10- 3 10- 2 10- 1 100101
104
103
102
101
D=
tp
tp
TI
F
T
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
DC Pulse cycle D = parameter
22691
ISO methodA
6.48
6.81
34
4.55
4.83
pin one ID
0.76
1.14
4° typ.
2.54 typ.
3.30
3.81
0.249
0.102
0.79 typ.
1.27 typ.
7.62 typ.
12.1 max.
9.27 min.
0.25 ± 0.1
3.5 ± 0.3
9.95 min.
2.54
1.78 0.76
1.52
R0.25
13
YWW Y 68
SFH615A-3
V
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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