7/12/00
DB92008m-AAS/a1
APPROVALS
lUL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
ll VDE 0884 in 2 available lead forms : -
- STD
- G form
DESCRIPTION
The H11G_ series are optically coupled isolators
consisting of an infrared light emitting diode and
a high voltage NPN silicon photo darlington
which has an integral base-emitter resistor to
optimise switching speed and elevated
temperature characteristics in a standard 6pin
dual in line plastic package.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lHigh Current Transfer Ratio ( 1000% min)
lHigh BVCEO (H11G1 - 100V min.)
lLow collector dark current :-
100nA max. at 80V VCE
lLow input current 1mA IF
APPLICATIONS
lModems
lCopiers, facsimiles
lNumerical control machines
lSignal transmission between systems of
different potentials and impedances
H11G1X, H11G2X, H11G3X
H11G1, H11G2, H11G3
HIGH VOLTAGE DARLINGTON
OUTPUT OPTICALLY COUPLED
ISOLATOR
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Peak Forward Current 3A
(1µs pulse, 300pps)
Reverse Voltage 3V
Power Dissipation 100mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
H11G3, H11G2, H11G1 55, 80, 100V
Collector-base Voltage BVCBO
H11G3, H11G2, H11G1 55, 80, 100V
Emitter-baseVoltage BVECO 6V
Power Dissipation 200mW
POWER DISSIPATION
Total Power Dissipation 260mW
0.26
0.5
Dimensions in
mm
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
7.62
6.62
0.5
1
3 4
6
2 5
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
10.46
9.86
0.6
0.1 1.25
0.75
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.5 VIF = 10mA
Reverse Voltage (VR)3VIR = 10µA
Reverse Current (IR)10µAVR = 6V
Output Collector-emitter Breakdown (BVCEO )
H11G1 100 VIC = 1mA
H11G2 80 VIC = 1mA
H11G3 55 VIC = 1mA
Collector-base Breakdown (BVCBO )
H11G1 100 VIC = 100µA
H11G2 80 VIC = 100µA
H11G3 55 VIC = 100µA
Emitter-base Breakdown (BVEBO )6VIE = 0.1mA
Collector-emitter Dark Current (ICEO )
H11G1 100 nA VCE = 80V
H11G2 100 nA VCE = 60V
H11G3 100 nA VCE = 30V
Coupled Collector Output Current ( IC )
H11G1, H11G2100mA 10mA IF , 1.2V VCE
H11G1, H11G2 5 mA 1mA IF , 5V VCE
H11G3 2 mA 1mA IF , 5V VCE
Collector-emitter Saturation Voltage VCE(SAT)
H11G1, H11G21.0V1mA IF , 1mA IC
H11G1, H11G21.2V16mA IF , 50mA IC
H11G31.2V20mA IF , 50mA IC
Input to Output Isolation Voltage VISO 5300VRMS See note 1
7500VPK See note 1
Input-output Isolation Resistance RISO 1011 ΩVIO = 500V (note 1)
Input-output Capacitance Cf0.5pF V = 0, f =1MHz
Turn-on Time ton5µsIF= 10mA, VCC = 5V,
Turn-off Time toff 100µsRL = 100Ω, f = 30Hz,
pulse width equal to
or less than 300µs
7/12/00
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Input
Output 10%
90%
10%
90%
toff
tr
ton
tf
Output
VCC
IF = 10mA
Input
FIGURE 1
100Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
DB92008m-AAS/a1
7/12/00
0 1 2 3 4 5 6
0.01
0.1
Collector-emitter voltage VCE ( V )
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Normalized Output Current vs.
Collector-emitter Voltage
Collector dark current I CEO (nA)
Collector Dark Current vs.
Ambient Temperature
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
100
0
Collector power dissipation P C (mW)
Collector Power Dissipation vs. Ambient Temperature
50
0.1 1.0 10 100
Input current IF (mA)
Normalized Output Current vs.
Input Current
0.01
0.1
1.0
10
1.0
10
100
Normalized output current
IF = 1mA
10mA
50mA
1
10
100
1k
10k
100k
150
200
250
1.0
Normalized output current
Normalized Output Current vs.
Ambient Temperature
10
-50 -25 0 25 50 75 100
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Forward Current vs. Ambient Temperature
Forward current I F (mA)
70
80
Normalized to
IF = 1mA
(300µs pulse),
VCE = 5V
10mA
IF = 1mA
50mA
Normalized to
IF = 1mA
(300µs pulse),
VCE = 5V
TA = 25 °C
0.01
Normalized output current
50V
VCE
VCE = 80V
VCE = 10V
0.1
100
100
Normalized to
IF = 1mA
(300µs pulse),
VCE = 5V
TA = 25 °C
DB92008m-AAS/a1
