H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form Dimensions in mm 2.54 7.0 6.0 1.2 7.62 1 6 2 5 3 4 7.62 6.62 4.0 DESCRIPTION 3.0 The H11G_ series are optically coupled isolators consisting of an infrared light emitting diode and 0.5 a high voltage NPN silicon photo darlington 3.0 which has an integral base-emitter resistor to 0.26 3.35 0.5 optimise switching speed and elevated temperature characteristics in a standard 6pin ABSOLUTE MAXIMUM RATINGS dual in line plastic package. (25C unless otherwise specified) FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Current Transfer Ratio ( 1000% min) l High BVCEO (H11G1 - 100V min.) l Low collector dark current :100nA max. at 80V VCE l Low input current 1mA IF l APPLICATIONS l Modems l Copiers, facsimiles l Numerical control machines l Signal transmission between systems of different potentials and impedances OPTION SM OPTION G 7.62 SURFACE MOUNT 0.6 0.1 10.46 9.86 13 Max Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Peak Forward Current (1s pulse, 300pps) Reverse Voltage Power Dissipation 60mA 3A 3V 100mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO H11G3, H11G2, H11G1 Collector-base Voltage BVCBO H11G3, H11G2, H11G1 Emitter-baseVoltage BVECO Power Dissipation 55, 80, 100V 55, 80, 100V 6V 200mW POWER DISSIPATION 1.25 0.75 0.26 Total Power Dissipation 260mW 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 7/12/00 DB92008m-AAS/a1 ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 3 1.2 V V A IF = 10mA IR = 10A VR = 6V 100 80 55 V V V IC = 1mA IC = 1mA IC = 1mA 100 80 55 6 V V V V IC = IC = IC = IE = nA nA nA VCE = 80V VCE = 60V VCE = 30V mA mA mA 10mA IF , 1.2V VCE 1mA IF , 5V VCE 1mA IF , 5V VCE V V V VRMS VPK pF s s 1mA IF , 1mA IC 16mA IF , 50mA IC 20mA IF , 50mA IC See note 1 See note 1 VIO = 500V (note 1) V = 0, f =1MHz IF= 10mA, VCC = 5V, RL = 100, f = 30Hz, pulse width equal to or less than 300s 10 Collector-emitter Breakdown (BVCEO ) H11G1 H11G2 H11G3 Collector-base Breakdown (BVCBO ) H11G1 H11G2 H11G3 Emitter-base Breakdown (BVEBO ) Collector-emitter Dark Current (ICEO ) H11G1 H11G2 H11G3 100 100 100 Collector Output Current ( IC ) H11G1, H11G2 H11G1, H11G2 H11G3 Collector-emitter Saturation Voltage VCE(SAT) H11G1, H11G2 H11G1, H11G2 H11G3 Input to Output Isolation Voltage VISO Input-output Isolation Resistance Input-output Capacitance Turn-on Time Turn-off Time Note 1 Note 2 1.5 RISO Cf ton toff TEST CONDITION 100 5 2 1.0 1.2 1.2 5300 7500 1011 0.5 5 100 100A 100A 100A 0.1mA Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC Input IF = 10mA ton 100 toff tr Input 7/12/00 Output tf Output 10% 10% 90% 90% DB92008m-AAS/a1 Collector Power Dissipation vs. Ambient Temperature Normalized Output Current vs. Collector-emitter Voltage 100 50mA 200 Normalized output current Collector power dissipation P C (mW) 250 150 100 50 0 10 10mA 1.0 IF = 1mA Normalized to IF = 1mA (300s pulse), VCE = 5V 0.1 0.01 -30 0 25 50 75 100 0 125 1 2 Forward Current vs. Ambient Temperature 6 100 70 Normalized output current 50mA 60 50 40 30 20 10 10mA 1.0 IF = 1mA Normalized to IF = 1mA (300s pulse), VCE = 5V TA = 25 C 0.1 10 0 0.01 -30 0 25 50 75 100 125 -50 Ambient temperature TA ( C ) -25 0 25 50 75 Ambient temperature TA ( C ) Normalized Output Current vs. Input Current Collector Dark Current vs. Ambient Temperature 100 100k VCE = 80V 10k 10 1.0 Normalized to IF = 1mA (300s pulse), VCE = 5V TA = 25 C 0.1 0.01 0.1 1.0 10 Input current IF (mA) 100 Collector dark current I CEO (nA) 100 Normalized output current 5 Normalized Output Current vs. Ambient Temperature 80 7/12/00 4 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( C ) Forward current I F (mA) 3 1k 50V VCE 100 10 VCE = 10V 1 -30 0 25 50 75 100 Ambient temperature TA ( C ) DB92008m-AAS/a1