TEXAS INSTR {OPTO} be DE ff a961726 O0abailb 4 | ond ee 89671725 TEXAS INSTR_ COPTO? 62C 36816 D ! roe TIP42, TIP42A, TIP42B, TIP42C, TIP42D, TIP42E, TIP42F P-N-P SILICON POWER TRANSISTORS REVISED OCTOBER 1984 . @ Designed for Complimentary Use With TIP41 Series 7-33-2/ i @ 65 Wat 25C Case Temperature : 6A Continuous Collector Current @ 140A Peak Collector Current . @ Minimum ft of 3 MHzat 10 V,0.5A @ Customer-Specified Selections Available device schematic TO-220AB PACKAGE EMITTER COLLECTOR BASE THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unless otherwise noted) TIP42 TIP42A | TIP42B current current current area at case temperature at case temperature {see Note 2} at temperature {see Note 3} i energy storage temperature range mm case o oO 2 > o a a - NOTES: 1. This value applies for ty < 0.3 ms, duty cycle < 10%. 2. Derate linearly to 150C case temperature at the rate of 0.52 W/C. 3. Derate linearly to 150C free-air temperature at the rate of 16 mW/C. 4. This tating is based on the capability of the transistor to operate safely in the circult In Figure 2. "sas oe Texas W INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 5-752b OD3b81L7? b TEXAS INSTR {OPTO} be Depp asi? i I 8961726 TEXAS INSTR COPTO) 62C 36817 OD l TIP42, TIP42A, TIP42B, TIP42C, , T- 33-2) TIP42D, TIP42E, TIP42F P-N-P SILICON POWER TRANSISTORS absolute maximum ratings at 25C case temperature (unless otherwise noted) TIP42D TIP42E TIP42F current current current area at case temperature at case temperature * at temperature energy storage temperature range mm case NOTES: 1. This value applies forty < 0.3 ms, duty cycle 10%. 2. Derate linearly to 150C case temperature at the rate of 0.62 W/C, - 3. Derate linearly to 150C free-air temperature at the rate of 16mW/C. 4. This rating is based on the capability of the transistor to operate safely in the circuit in Figure 2. electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS Tipa2 TIPa2A TIP42B T4260 UNIT MIN TYP MAX |MIN TYP MAX |MIN TYP MAX ]MIN TYP MAX v Ic= ~30mA, IB = 0. 40 > |-60 80 - 100 v - (BRICEO See Note 5 i VcE= -30V, igp=O ~0.7 -0.7 . I CEO VcE= 60V, Ip=O ~O7 a7, | Vce= -80V. Vpep=0 0.4 Vce = 100V, VpeE=0 -0.4 | . CES Voce = 120V, Vpp= 0 =O4 mA Vce= 140V, Veep = 0 ~0.4 lEBO Vep = 5V, Ic =0 -1 -i -1 -1 mA Veg = - = -0. ce= 4V, Ie= -08A, | 3g 30 30 30 ; hee See Notes 5 and 6 Fi ' VceE= -4V, Ig = -3A, . 15 75} 15 75 | 15 75 16 75 See Notes 5 and 6 =| Vce=4V, (c= -6A, t v - -2 - ~ : 0 BE See Notes 5 and6 2 2 2 v Ip = -0.64, Ic = -6A, ' Vv, -1. -1. -1. -1, | 9S CE(sat) See Notes 5and6 . 18 1.6 16 18 v VcE=-10V, ic = -0.5A, s. hfe * cE c ? 20 20 20 20 . o f = 1kHz i @ Vce=-10V, In = 0.6A, j a Ihrel f at MHz : 3 3 3 3 f : NOTES: 5. These parameters must be measured using pulse techniques, ty = 300 ys, duty cycle < 2%. I : 6. These parameters are measured with voltage-sensing separate from the current-carrying contacts. | i i } : wy 5-76 : TEXAS - 4283 INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 :TEXAS INSTR {OPTO} be dEppsseizeb oosnaia 8 je wee x 8861726 TEXAS INSTR COPTO) 62C 36818 D | MAT TIP42, TIP42A, TIP42B, TIP42C, TIP42D, TIP42E, TIP42F P-N-P SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature (unless otherwise noted) Te 3 32-2 | { PARAMETER TEST CONDITIONS TIP420 TIPAZE TIPA2F UNIT : - MIN TYP MAX MIN TYP MAX MIN TYP MAX I = ~30mA, ip = 0, ViBRICEO ke Note -120 140 - 160 Vv . Iceo Voce = -90V. Ig = 0 -0.7 -0.7 -0.7 mA ' VcE= ~160V, Vae=0 -0.4 : Ices Voce = 180V, Vpe=0 0.4 mA Vce=-200V, Vpe=0 0.4 leno Vep = ~ SV, Ic = 0 -1 -1 -1 mA Vee = -4V. Ic = 0.3A, 30 30 30 h See Notes 5 and 6 Fe Vope -4V, Ig = 3A, 1s 5 i. See Notes 5 and ; VcE= 4V, ic = 6A, | VBE See Notes 5 and 6 2 - 2 2 v ig = -1.5A, Ic = -6A, -1.5 -1. -1. . Vceisatl See Notes 5 and6 16 1.6 v ' Vop=10V, Ic=O.5A, hy fe t= ike _ 20 20 . 20 Vee = T0V,.- fc = -0.5A, Intel fet Miz 3 3 3 NOTES: 5. These parameters must be measured using pulse techniques, ty, = 300 us, duty cycle < 2%. 6. These parameters are measured with voltage-sensing separate from the current-carrying contacts, thermal characteristics . . PARAMETER MIN TYP MAX| UNIT Rec 7.92 C Raa 62.5 mw resistive-load switching characteristics at 25 case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS * MIN TYP MAX [| UNIT ton Ic = - 6A, Inj = 0.6A, ig2 = 0.6A, 0.4 s Toft Vectoif) = 4. RL = 52. See Figure 1 0.7 # t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. o = > a o - i 18s TEXAS % 5-77 INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265. doTEXAS INSTR LOPTO} {. @964726 TEXAS INSTR COPTO) oe 62C 36819 | TIP42, TIP42A, TIP42B, TIP42C, 7-33-2/ I | TIP42D, TIP42E, TIP42F P-N-P SILICON POWER TRANSISTORS D sat tt PARAMETER MEASUREMENT INFORMATION } INPUT : F MONITOR OUTPUT : , . . MONITOR Pt 1N914 Agei = 102 TUT WA >} _ >| _ > 2N4301 562 1N914 1N914 1NO14 | | | | | pF F1 Veen * P fos Vepi16V - ADJUST FOR Von = -14V AT ' : INPUT MONITOR Rpg2 = 10 2. TEST CIRCUIT INPUT ov TH 10% a MONITOR 1 ene -t4v == 30% : i i OUTPUT 90% I MONITOR ' . 10% VOLTAGE WAVEFORMS NOTES: A. Vgenisa 30-V pulse into a 50 2 termination. - 8. Th Vgen waveform is supplied by a generator with the following characteristics: t, < 15 ns, ty< 15ns, Zout = 509, tw = 20us, duty cycle < 2%. G dil . Resistors must be noninductive types. . The d-c power supplies may require additional bypassing in order to minimize ringing. SO9IA9 mong FIGURE 1. RESISTIVE-LOAD SWITCHING .. Waveforms are monitored on an oscilloscope with the following characteristics: t,< 15 ns, Rin 2 10 MQ, Cin < 11.5 pF. St 5-78 TEXAS INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 1283 ba DE fj a961724 DO3baL4d oO oTEXAS INSTR {f0PTO} I om steerer La vey Q4b172b OO3b820 b U 1283 8961726 TEXAS INSTR COPTO) 62C 36820 OD l TIP42, TIP42A, TIP42B, TIP42C, | TIP42D, TIP42E, TIP42F P-N-P SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION (>) Veg MONITOR R 2N4301 Bet 202 Repo = 1002 Vep1=10V 7 TEST CIRCUIT ty = 5 ms {See Note B) 7T-33-2/ | i i u1 {See Note A} L2 (Sea Note A} Veco =10V = Ig MONITOR iNPUT VOLTAGE COLLECTOR CURRENT 26A aaqtt t ' t o---+ -10V COLLECTOR VOLTAGE - VipriceR --4- VOLTAGE AND CURRENT WAVEFORMS TIP Devices NOTES: A. Lt andL2 are 10 mH, 0.11 2, Chicago Standard Transformer Corporation C-2688, or equivalent. B. Input pulse duration is increased until Icn4 = 2.5A. FIGURE 2. INDUCTIVE-LOAD SWITCHING TEXAS % INSTRUMENTS POST OF FICE 8OX 228012 DALLAS, TEXAS 75265 5-79TEXAS INSTR {OPTO+ 2 DEB ssbi72b oosnaen a 8961726 TEXAS INSTR COPTO) 62C 36821 ov | TiP42, TIP42A, TIP42B, TIP42C, T- 33-2] TIP42D, TIP42E, TIP42F P-N-P SILICON POWER TRANSISTORS ae TYPICAL CHARACTERISTICS STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT = ~ Voce =-4V Tc = 25C See Notes 6 and & 8 8 a o = o ~ hreStatic Forward Current Transfer Ratio 1 0.01 -0.04 -0.1 -0.4 1 -4 -10 icColfector CurrantA FIGURE 3 NOTES: 5. These parameters must be measured using pulse techniques, ty = 300 ys, duty cycle < 2%, 6. The parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. MAXIMUM SAFE OPERATING AREA FORWARD-BIAS SAFE OPERATING AREA 100 tw = us, d=0.1= ty = 1ms, d= 0.1 = 10% ty = 10 ms, d = 0,1 = 10% | . D.C. See Note 7 = eo = o Oo TIP41 TIP41A TIP41B 1c 1 TIP41E 0.01 pa 1.0 10 100 1k VceE Collector-Emitter Voltage V FIGURE 4 NOTE 7: This combination of maximum voltage and current may be achieved only when switching from saturation to cutoff with a clamped inductive-load. i 4 5-80 ; EXAS wo 12463 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 76265 SODIAD I Collector Current A 6TEXAS INSTR {OPTO} be DE J at61724 o03bae2 o i 8961726 TEXAS INSTR COPTOD - 2c 36822, Desf TIP42, TIP42A, TIP42B, TIP42C, TIP42D, TIP42E, TIP42F _P-N-P SILICON POWER TRANSISTORS THERMAL INFORMATION T- 3 3 -2 ) DISSIPATION DERATING CURVE Py_Maximur Continuous Device DissipationW 0 25 50 75 100 125 150 Te-Case TemperatureC - FIGURE 5 | , 2 > @ a o = i i "289 a TEXAS 4% 5-81 INSTRUMENTS POST OFFICE 8OX 225012 DALLAS, TEXAS 75265 ne