Discrete Devices Transistors (Cont.) Low Level Amplifiers Maxirnum Ratings Electrical Characteristics @ 25C Type Polarity Pp Vee | Vce | VeB Hee @lc Vce(Sat) @lc/Ip! fr | Cob NF @f Package Ambient | vats] Voits| Volts | Min/Max | mA | Volts | ma/ma [MHZ] PF | gp mW Min | Max Max kHz 2N327A PNP 700 50 | 40 | 20 9/22 3.0 | 03 5/2 2] 10 - - T0-39 2N327B PNP 700 50] 40 | 20 9/22 3.0 | 0.3 5/2 2} 10 -_ - T0-39 2N328A PNP 700 50 | 35 | 20 18/44 3.0 | 0.5 5/2 21 10 - - TO-39 2N328B PNP 700 50 | 35 | 20 18/44 3.0 | 0.5 5/2 2] 10 - - T0-39 2N3294 PNP 700 50 | 30 | 20 36/88 3.0 | 0.6 5/2 2; 10 ~ - TO-39 2N329B PNP 700 50 | 30 | 20 36/88 3.0 | 0.6 5/2 21 10 - - T0-39 2N760 NPN 500 45 7 45 8 76/333 | 1.0 | 1.0 10/1.0 50] 8 - - TO-18 2N760A NPN 500 60 | 60 8 76/333 | 1.0 | 1.0 10/1.0 50] 8 - - TQ-18 2N929 NPN 300 45] 45 5 40/120 | 0.01} 1.0 10/0.5 30) 8 4 | 15,7* TO-18 2N929A NPN 500 60} 45 6 40/120 | 0.01; 0.5 10/0.5 45] 6 4 | 15.7* TO-18 2N930 NPN 300 45 | 45 5 (100/300 | Q.01; 1.0 10/0.5 30} 8 3 | 16.7* TO-18 2N930A NPN 500 60 | 45 6 | 100/300 | 0.01} 0.5 10/0.5 45] 6 4 | 15.7* TO-18 2N930B NPN 500 60 | 45 6 | 100/300 | 0.01] 0.5 10/0.5 45] 6 3 1.0 TO-18 2N1025 PNP 250 40 | 35 | 40 - - - - - - | 25 1 TO-39 2N 1026 PNP 250 40 | 35 | 40 - - - - - - | 25 1 T0-39 2N1219 PNP 250 30] 25 {| 20 18/- 5 - ~ - {15 25 1 TO-39 2N1220 PNP 250 30] 25 | 20 9/- 5 - ~ - | 18 25 1 T0-39 2N2177 PNP 100 6 6 6 70/- 0.5 - - - {14 15 1 T0-39 2N2280 PNP 150 10 6 | 10 10/100 | 5 0.1 5/0.8 ~ 1 10 - - TO-18 2N2483 NPN 360 60 | 60 6 40/120 | 0.01] 0.35 1/0.1 60; 6 4 | 15.7* TO-18 2N2484 NPN 360 60 ; 60 6 | 100/300 } 0.01] 0.35 1/0.1 60) 6 3 | 15.7* TO-18 2N2484A NPN 360 60 | 60 6 | 100/500 | 0.01] 0.35 1/0.1 60! 6 2 | 10.0 TO-18 2N2509 NPN 360 125 ; 80 7 25/- 0.01] 1.0 5/0.5 45| 6 7 1.0 TO-18 2N2510 NPN 360 100 | 65 7 | 150/500 | 10.00} 1.0 5/0.5 45| 6 4 1.0 TO-18 2N2511 NPN 360 80 | 50 7 (| 240/750 | 10.00] 1.0 5/0.5 45] 6 4 1.0 TO-18 2N2586 NPN 300 60 |} 45 6 | 120/360 | 0.01] 0.5 5/0.5 45] 7 2 | 10.0 TO-18 2N2604 PNP 400 60 | 45 6 40/120 | 0.01} 0.5 10/0.5 30] 6 4 | 15.7* TO46 2N2605 PNP 400 60 | 45 6 | 100/300 | 0.01! 0.5 10/0.5 30| 6 3 | 15.7* TO46 2N2861 PNP 300 25 | 20 5 30/120 | 0.01] 0.2 10/1 200] 6 3 | 10.0 TO-18 2N2862 PNP 300 25 ; 20 5 12/120 | 0.01} 0.2 10/1 150] 6 4 | 10.0 TO-18 2N3117 NPN 360 60 | 60 6 | 250/500 | 0.01} 0.35 1/0.1 60] 45] 1 | 10.0 TO-18 *Bandwidth 314Discrete Devices a ae Beam Lead Chips Transistor Chips 100% Probed Parameters @ 25C (Partial List) . ft Mech, Function Polarity Type Similar BVcBO BVCEO BVERO Hre @ tc Vce(Sat) @ Ic/lp MHz | Qutline Ident: EtA Type Volts Volts Volts Volts ; Code . . Min/Max | mA mA/mA | Min | Owg. Min @ 1020 | Min @ 10 mA | Min @ 10uA Max Low Level NPN | BT929 2N929 45 45 5 40/120 0.01) 0.35 10.1 60 1 RL Amplifier NPN | BT930 2N930 45 45 5 100/500 0.01) 0.35 1/0.1 60 1 RL NPN | BT2483 | 2N24B3 60 60 6 40/120 0.01} 0.35 1/0.4 60 1 RL NPN |BT2484 | 2N24B4 60 60 6 100/500 0.01] 0.35 1/0.1 60 1 RL PNP | BT2604 | 2N2604 60 45 6 40/120 9.01) 0.5 10/05 80 1 SP PNP |BT2605 | 2N2605 60 45 6 400/300 0.01) 0.5 10/0.5 | 100 1 SP PNP | BT3250A | 2N3250A 60 60 5 50/150 10.0 | 0.5 50/5.0 | 250 1 SB PNP} BTI9OG | 2N39N6 40 40 5 100/300 10.0 | 0.4 60/5.0 | 250 q so Medium NPN |B12222 | 2N2222 60 30 5 100/300 | 150 1.6 500/50 250 1 RB Current NPN | BT2222A | 2N2222A 75 40 6 100/300 { 150 1.0 500/50 300 1 RB Amplifiers PNP |BT2907 | 2N2907 60 40 5 100/300 | 150 1.6 500/50 200 1 SB PNP | BT2907A | 2N2907A 60 60 5 100/300 | 150 1.6 500/50 200 1 SB NPN |BT3700 |2N3700 |140@0.1mA} 86@30mA | 7@0.i mA } 100/300 | 150 0.5 500/50 100 2 RG RF/UHF NPN 1 BT918 2N918 30@1uA 15@3mA 3 20/- 3 | 0.4 10/1.0 | 600 1 RV Amplifiers NPN |BT2708 | 2N2708 35@ 1A 20@3 mA 3 30/200 2 0.4 10/1.0 - 7, 1 RV NPN | BT3960 | 2N3960 20 12 45 40/200 10 0.3 30/3.0 | 1600 1 RC PNP |8T4260 | 2N4260 1 16 45 30/150 10 0.35 10/1.0 | 1600 1 sc NPN |BT5109 | 2N5109 40 20@5 mA 3 40/120 | 350 - - 1200 1 RE High-Speed NPN | BT708 2N708 40 16 5 30/120 10 04 10/1.0 | 500 1 RJ Switches NPN | BT2369A | 2N2369A 40 16 5 40/120 10 0.5 100/16 500 1 RJ NPN [813227 | 2N3227 40 20 6 100/300 10 05 100/10 500 1 RJ High-Voltage NPN | BT3501 | 2N3501 140 140 6 100/300 | 150 a5 150/15 100 2 RF Switches PNP | BT3635 | 2N3635 140 440 8 490/300 } 150 as 450/15 100 2 SF Core Driver NPN |B73725 | 2N3725 80 50 6 60/150 | 100 | 0.95 |1000/100 ; 300 2 RK Choppers PNP |BT2944 | 2N2944 15 @ 0.1 nA - 16 @Q.1nA 80/- 1.0 10.2 10/2.0 - 1 SY PNP |BT2946 | 2N2946 | 40@0.5nA - 40@0.5nA | 30/- 1.0 | 0.2 10/20 } - 1 SY Power NPN |e8T3993 | 2N3999 [100@0.1mA] 50@30mA | 6@0.1mA | 40/ [1000 | 0.7 }1000/100 | - 3 | RH 1. This Identiticatin Code is etched into the back of the chip. FET Chips V VDS(ON) By \ Inss Vos=t5v, | fds on) Vas =0 Mech. Raytheon Similar GSS GSS Vps = 15V os ter |) Veg =0, : ident Type EIA Type Ig=-1yA Vass = -20V mA Ip = 0.5 nA f=1kHz Max Ip =mA Outline Code? Valts pA Min/Max Volts Ohms Volts Dwg. _ Min/Max BT 4856 2N4856 -40 -250 50/ ~4/-10 25 0.75 20 1 NC BT4857 2N4857 -40 -250 20/100 -2/-6 40 0.5 10 1 NC BT 4858 2N4858 -40 ~250 8/80 -0.8/4 60 0.5 5 1 NC . This Identification Code is etched into the back of the chip. 3-22