PSS8050D - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 2002 Nov 18 2004 Aug 10

DISCRETE SEMICONDUCTORS

PSS8050

NPN medium power 25 V transistor

ook, halfpage

M3D186

2004 Aug 10 2

Philips Semiconductors Product speciﬁcation

NPN medium power 25 V transistor PSS8050

FEATURES

•High total power dissipation

•High current capability.

APPLICATIONS

•Medium power switching and muting

•Amplification

•Portable radio output amplifier (class-B, push-pull).

DESCRIPTION

NPN transistor in a SOT54 (TO-92) plastic package.

PNP complement: PSS8550.

MARKING

QUICK REFERENCE DATA

PINNING

TYPE NUMBER MARKING CODE

PSS8050C S8050C

PSS8050D S8050D

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage 25 V

ICcollector current (DC) 1.5 A

PIN DESCRIPTION

1 collector

2 base

3 emitter

handbook, halfpage

MSB033

Fig.1 Simplified outline (SOT54).

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed

conditions: pulse width tp≤1 s; duty cycle δ≤0.75%.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −40 V

VCEO collector-emitter voltage open base −25 V

VEBO emitter-base voltage open collector −6V

ICcollector current (DC) −1.5 A

ICM peak collector current −2A

IBbase current (DC) −300 mA

IBM peak base current −1A

Ptot total power dissipation Tamb ≤25 °C; note 1 −850 mW

Tamb ≤25 °C; note 2 −900 mW

Tamb ≤25 °C; note 3 −1W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

2004 Aug 10 3

Philips Semiconductors Product speciﬁcation

NPN medium power 25 V transistor PSS8050

THERMAL CHARACTERISTICS

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

Operated under pulsed conditions: pulse width tp≤1 s; duty cycle δ≤0.75%.

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air; note 1 147 K/W

in free air; note 2 139 K/W

in free air; note 3 125 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB =35V; I

E=0 −−100 nA

VCB =35V; I

E= 0; Tamb = 150 °C−−50 µA

ICEO collector-emitter cut-off current VCE =25V; I

B=0 −−100 nA

IEBO emitter-base cut-off current VEB =6V; I

C=0 −−100 nA

hFE DC current gain IC= 5 mA; VCE =1V 45 −−

IC= 800 mA; VCE =1V 40 −−

DC current gain IC= 100 mA; VCE =1V

PSS8050C 120 −200

PSS8050D 160 −300

VCEsat collector-emitter saturation voltage IC= 800 mA; IB=80mA −165 500 mV

VBEsat base-emitter saturation voltage IC= 800 mA; IB=80mA −−1.2 V

VBEon base-emitter turn-on voltage IC= 10 mA; VCE =1V −−1V

fTtransition frequency IC= 50 mA; VCE =10V;

f = 100 MHz 100 −−MHz

Cccollector capacitance VCB =10V; I

E=i

e= 0; f = 1 MHz −−10 pF

2004 Aug 10 4

Philips Semiconductors Product speciﬁcation

NPN medium power 25 V transistor PSS8050

handbook, halfpage

400

100

200

300

MLD946

10−11IC (mA)

hFE

10 102103104

(1)

(2)

(3)

Fig.2 DC current gain as a function of collector

current; typical values.

PSS8050C VCE =1V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

200

1200

400

600

800

1000

MLD947

10−1110 IC (mA)

VBE

(mV)

103

102104

(1)

(2)

(3)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

PSS8050C VCE =1V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

10−111010

2103104

102

103

MLD948

IC (mA)

VCEsat

(mV)

(1)

(3)

(2)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

PSS8050C IC/IB= 10.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MLD950

200

1400

600

1000

10−1110 IC (mA)

VBEsat

(mV)

102103104

(1)

(3)

(2)

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

PSS8050C IC/IB= 10.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2004 Aug 10 5

Philips Semiconductors Product speciﬁcation

NPN medium power 25 V transistor PSS8050

handbook, halfpage

MLD949

103

102

10−11

RCEsat

(Ω)

IC (mA)

10 102103104

(1)

(3)

(2)

Fig.6 Equivalent on-resistance as a function of

collector current; typical values.

PSS8050C IC/IB= 10.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

0 0.5 1 VCE (V)

(A)

2.5

1.5

0.5

MLD951

(1)

(8)

(2)

(3)

(4)

(7)

(5)

(6)

(10)

(9)

Fig.7 Collector current as a function of

collector-emitter voltage; typical values.

PSS8050C

(1) IB= 55 mA.

(2) IB= 49.5 mA.

(3) IB= 44 mA.

(4) IB= 38.5 mA.

(5) IB= 33 mA.

(6) IB= 27.5 mA.

(7) IB= 22 mA.

(8) IB= 16.5 mA.

(9) IB= 11 mA.

(10) IB= 5.5 mA.

2004 Aug 10 6

Philips Semiconductors Product speciﬁcation

NPN medium power 25 V transistor PSS8050

handbook, halfpage

400

100

200

300

MLD952

10−11IC (mA)

hFE

10 102103104

(1)

(2)

(3)

Fig.8 DC current gain as a function of collector

current; typical values.

PSS8050D VCE =1V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

200

1200

400

600

800

1000

MLD953

10−1110 IC (mA)

VBE

(mV)

103

102104

(1)

(2)

(3)

Fig.9 Base-emitter voltage as a function of

collector current; typical values.

PSS8050D VCE =1V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

MLD954

103

102

10−1110 IC (mA)

VCEsat

(mV)

103

102104

(1)

(3)

(2)

Fig.10 Collector-emitter saturation voltage as a

function of collector current; typical values.

PSS8050D IC/IB= 10.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MLD956

200

1400

600

1000

10−1110 IC (mA)

VBEsat

(mV)

102103104

(1)

(3)

(2)

Fig.11 Base-emitter saturation voltage as a

function of collector current; typical values.

PSS8050D IC/IB= 10.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2004 Aug 10 7

Philips Semiconductors Product speciﬁcation

NPN medium power 25 V transistor PSS8050

handbook, halfpage

MLD955

103

102

10−11

RCEsat

(Ω)

IC (mA)

10 102103104

(1)

(3)

(2)

Fig.12 Equivalent on-resistance as a function of

collector current; typical values.

PSS8050D IC/IB= 10.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

0 0.5 1 VCE (V)

(A)

2.5

1.5

0.5

MLD957

(7)

(9)

(10)

(1)

(8)

(6)

(5)

(4)

(3)

(2)

Fig.13 Collector current as a function of

collector-emitter voltage; typical values.

PSS8050D

(1) IB= 55 mA.

(2) IB= 49.5 mA.

(3) IB= 44 mA.

(4) IB= 38.5 mA.

(5) IB= 33 mA.

(6) IB= 27.5 mA.

(7) IB= 22 mA.

(8) IB= 16.5 mA.

(9) IB= 11 mA.

(10) IB= 5.5 mA.

2004 Aug 10 8

Philips Semiconductors Product speciﬁcation

NPN medium power 25 V transistor PSS8050

PACKAGE OUTLINE

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 5.2

5.0

0.48

0.40

0.45

0.38

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

1(1)

max.

2.5

0.66

0.55

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

SOT54 TO-92 SC-43A 97-02-28

04-06-28

A L

0 2.5 5 mm

scale

Plastic single-ended leaded (through hole) package; 3 leads SOT54

e1e

2004 Aug 10 9

Philips Semiconductors Product speciﬁcation

NPN medium power 25 V transistor PSS8050

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplications willbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomers usingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

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Printed in The Netherlands R75/02/pp10 Date of release: 2004 Aug 10 Document order number: 9397 750 13682